igbt ignition
Abstract: igbt to220 D 400 transistor data POWER BIPOLAR JUNCTION TRANSISTOR IGBT 3 pin BUK856-400 BUK856-400IZ ignition coil IGBT transistor application
Text: Datum 971119 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande
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BUK856-400IZ
BUK856-400
igbt ignition
igbt to220
D 400 transistor data
POWER BIPOLAR JUNCTION TRANSISTOR
IGBT 3 pin
ignition coil IGBT
transistor application
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diode IN 5409
Abstract: IBGT ic540 GFE 88 DIODE
Text: PRELIMINARY / & ,$ 7 ]SINGLE SWITCH IGBT DOUBLE INT-A -PAK Ultra-FastTM Speed IGBT Features • • Generation 4 IGBT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200
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125oC.
diode IN 5409
IBGT
ic540
GFE 88 DIODE
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mgy20n120d
Abstract: IGBT 250 amp
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
mgy20n120d
IGBT 250 amp
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MGY25N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D
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MGY25N120D
Abstract: 340G-02
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D
340G-02
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NT 407 F MOSFET TRANSISTOR
Abstract: transistor motorola 359 Motorola 720 transistor 740 MOSFET TRANSISTOR MGY20N120D 720 transistor transistor motorola 236
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
MGY20N120D/D*
NT 407 F MOSFET TRANSISTOR
transistor motorola 359
Motorola 720 transistor
740 MOSFET TRANSISTOR
MGY20N120D
720 transistor
transistor motorola 236
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PDF
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340G-02
Abstract: MGY20N120D
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
340G-02
MGY20N120D
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mosfet amp ic
Abstract: transistor motorola 236 MGY25N120D
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D/D*
mosfet amp ic
transistor motorola 236
MGY25N120D
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irg7i
Abstract: No abstract text available
Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G
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IRG7IC30FDPbF
O-220AB
irg7i
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Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
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Untitled
Abstract: No abstract text available
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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1682A
IRG4PSC71UD
Super-247
O-247
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diode lt 247
Abstract: IRG4PSC71UD TB diode 1084 GE
Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
diode lt 247
IRG4PSC71UD
TB diode
1084 GE
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irg7ic
Abstract: IRG7IC30FDPBF
Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G
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IRG7IC30FDPbF
O-220AB
O-220AB
irg7ic
IRG7IC30FDPBF
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Untitled
Abstract: No abstract text available
Text: APT100GF60JRD 600V E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT100GF60JRD
20KHz
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AN-994
Abstract: IRG4BC10SD-L IRG4BC10SD-S
Text: PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC10SD-S
IRG4BC10SD-L
O-262
AN-994.
AN-994
IRG4BC10SD-L
IRG4BC10SD-S
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IRGP4740DPBF
Abstract: No abstract text available
Text: IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 24A E G G Gate C Collector Features C E IRGP4740D-EPbF TO-247AD
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IRGP4740DPbF
IRGP4740D-EPbF
O-247AD
O-247AC
IRGP4740DPbF/IRGP4740D-EPbF
JESD47F)
IRGP4740DPBF
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Untitled
Abstract: No abstract text available
Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF
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IRGP4262DPbF
IRGP4262D-EPbF
O-247AD
O-247AC
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Transistor Mosfet N-CH 400V 40A
Abstract: AN-994 IRG4BC10SD-L IRG4BC10SD-S
Text: PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC10SD-S
IRG4BC10SD-L
O-262
AN-994.
Transistor Mosfet N-CH 400V 40A
AN-994
IRG4BC10SD-L
IRG4BC10SD-S
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CEM-1 20Z
Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al
Text: V T- 11 5 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 8 8 ~ 1 3 2 VA C , 11 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST
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80mVp-p
230VAC
CTc31
KBJ406G
4AL/250V
TF-349
CEM-1 20Z
LT KBJ406G
Fuse 250V 4al
6C3 diode
ltkbj406g
C259C
2SK2611
100MOhms
elna 105
fuse 4al
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GFE 88 DIODE
Abstract: No abstract text available
Text: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode 1 , • Logic Level 1 ' ^GS th = 0.8.2.0V ¿ 3 ^ VPT05I58 Pin 1 Type BSS 88 VDS 240 V b 0.25 A Type BSS 88 BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S454 Q62702-S287 Q62702-SS03
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T05I58
Q62702-S454
Q62702-S287
Q62702-SS03
Q62702-S576
E6288
E6296
E6325
Sem80
GFE 88 DIODE
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250jt
Abstract: SSH22N50 SSH22N45 250M
Text: N-CHANNEL POWER MOSFETS SSH22N50/45 FEATURES • Low er R d sio n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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SSH22N50/45
SSH22N50
SSH22N45
100VX
250jt
250M
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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PDF
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C2625
Abstract: No abstract text available
Text: APT50GF60B2RD APT50GF60LRD 600V 80A A dvanced row er TECHN O LO G Y APT50GF60B2RD Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode FRED offers superior
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OCR Scan
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APT50GF60B2RD
APT50GF60LRD
APT50GF60B2RD
20KHz
APT50GF60LRD
APT50GF60B2RD/LRD
Collecto59)
O-264
C2625
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smd diode code b54
Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current
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OCR Scan
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BUZ101S
P-T0220-3-1
Q67040-S4013-A2
E3045A
P-T0263-3-2
Q67040-S4013-A6
E3045
smd diode code b54
smd transistor c015
smd code book
71ss
TRANSISTOR SMD MARKING CODE c015
01333LA
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