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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 4450 fo r p ro d u c t'0 0 d \s c o n t^ 4 .4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC39V4450 is an internally impedance-matched GaAs power F E T especially designed for use in 4.4 ~ 5.0
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GFC39V4450
M5M27C102P,
RV-15
16-BIT)
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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> U M „orice- M GFC39V4450A * * * * *«« i! 4 . 4 —5 .0 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION OUTLINE DRAWING T h e M G F C 3 9 V 4 4 5 0 A is an internally im p e d a n c e -m a tc h e d Unit millimeters linches
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GFC39V4450A
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MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E
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12GHz
MGF4919E
MGF4914E
MGF49T4D
MGF4714AP
MGF4914D
MGF1923
MGF1902B
MGF2430A
MGF4919
MGF1402B
MGF2430
7.1 power amplifier circuit diagram
block diagram of power factor meter
mgf2445
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V4 4 5 0 A 4 .4 — 5 .0 G H z BAN D 8 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The GFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V4450A
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