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    GESD1060 Datasheets (1)

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    GESD1060 GTM NPN EPITAXIAL PLANAR TRANSISTOR Original PDF

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    GESD1060

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,


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