Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GES6016 Search Results

    SF Impression Pixel

    GES6016 Price and Stock

    Central Semiconductor Corp GES6016 TIN/LEAD

    Transistor GP BJT NPN 60V 800nA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: GES6016 TIN/LEAD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GES6016 TIN/LEAD Box 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.43204
    		Buy Now
    Mouser Electronics GES6016 TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.453
    		Get Quote

    Central Semiconductor Corp GES6016 PBFREE

    Transistor GP BJT NPN 60V 800nA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: GES6016 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GES6016 PBFREE Box 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.37564
    		Buy Now
    Mouser Electronics GES6016 PBFREE 458
    • 1 $1.05
    • 10 $0.859
    • 100 $0.669
    • 1000 $0.484
    • 10000 $0.394
    		Buy Now

    GES6016 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GES6016 Central Semiconductor TRANS GP BJT NPN 70V 0.8A 3TO-92 Scan PDF
    GES6016 General Electric Semiconductor Data Handbook 1977 Scan PDF
    GES6016 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    GES6016 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GES6016 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GES6016 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    GES6016 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GES6016-J1 Central Semiconductor Small Signal Transistors Original PDF
    GES6016-J1 Central Semiconductor Small Signal Transistors TO-92HS Case Scan PDF

    GES6016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GES6016 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)800m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF GES6016 Freq135M

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR


    OCR Scan     		PDF 00DDE3D GES6014 GES6016 GES6014, GES6016 GES6015, GES6017 CBR10Series, CBR25Ser/es

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014 GES6015 GES6016 GES6017 GES6218


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 100-C TA-25 GES6220 GES6001

    GES6014

    Abstract: GES6015 GES6016 GES6017 affa 18
    Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 ti graf&Gsfl gSHBB6©K€il©SS@F @@51-3. de -r-â9 '£L 00DDE3D b I • GES6014 GES6016 C@BS€?CSl SemftfiGQnSfilBCtOr Corp. Central semiconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adams Avenue


    OCR Scan     		PDF GES6014 GES6016 to-92 GES6014, GES6016 GES6015, GES6017 CBR30 GES6015 affa 18

    b5170

    Abstract: GES6014 GES6015 GES6016 GES6017 RS50K
    Text: G ES 6 0 14 GES6016 *1 NPN SILICON TRANSISTOR JEDEC TO -92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR GES6014, GES6016 types are Silicon NPN Transistors manufactured by the epitaxial planar process designed for general purpose medium power amplifier and switch­


    OCR Scan     		PDF GES6014, GES6016 GES6015, GES6017 GES60H 500mA, 100MA 500mA b5170 GES6014 GES6015 RS50K

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 GES6001 GES6002

    GES2222A

    Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, GES2222A NPN switching transistor 2N4403

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93

    2N3903

    Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401

    2N4123 pnp silicon

    Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    ES5448

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE b v ceo Device Type @ 10m A V Min. 1I •I m V C E(sat) Max. @ lc(m A ) GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 60 60 40 40 40 00 00 60 00 «0 200 200 120 200 300 2 ■ M M


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5824 GES5825 ES5448 GES6001

    ERF 2030

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 -IN4I48 ERF 2030 GES6220

    2N4425

    Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
    Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)


    OCR Scan     		PDF O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2n4125 equivalent

    Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 NPN+2n3904

    mpsa65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20

    n3904

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20n) -300mA, n3904 MPSA20

    2n4125 equivalent

    Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent n4401

    S5822

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo Type @ 10m A V Min. 1I •I m VCE(sat) ! BBI MM m m m Mm SM M em m m ■ HBm Ë K w SSsm BBB Mi MB Max. @ lc (m A ) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 S5822 GES6001