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    GERMANIUM TRANSISTOR AC 129 Search Results

    GERMANIUM TRANSISTOR AC 129 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM TRANSISTOR AC 129 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MDA920A4

    Abstract: full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b
    Text: SECTION 6 APPLICATIONS Edited and Updated PORTION OF WAVEFORM APPLIED TO LOAD Because they are reliable solid state switches, thyristors have many applications, especially as controls. One of the most common uses for thyristors is to control ac loads such as electric motors. This can be done either by


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    PDF 228A6FP MR506 MDA920A4 full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b

    transistor c111

    Abstract: C111 transistor
    Text: 11.3 Gbps Optical Receiver ADN3010-11 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3010-11 50Ω 50Ω OUT+ OUT– POWER MONITOR GND PM 11858-001 Integrated SiGe PIN photodiode, transimpedance amplifier TIA , and limiting amplifier (LA) Power monitor output: 1.0 A/W at O band wavelengths


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    PDF ADN3010-11 PRBS31 11-Pad C-11-1 D11858-0-1/15 transistor c111 C111 transistor

    NCP4115

    Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
    Text: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W


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    PDF SGD503/D NCP1450 NCP1550 CS5211 CS5212 NCP1570 NCP1571 200ve r14525 ONS80126-10 NCP4115 NCP4100 200v npn 3a d2pak Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    smps circuit diagram

    Abstract: mc12140 20100ct motorola analog ICs vol.2 NBSG16 OC192 smps based 45 watt inverter AND8071 NBSG14 spice germanium diode
    Text: Q U A R T E R L Y T E C H N O L O G Y A N D A P P L I C AT I O N S M A G A Z I N E ON-Display THIRD QUARTER 2001 Vol. 2, No. 2 This Quarter. FEATURES Leaky Electricity 3 SiGe Activates the Next Generation of Broadband Communication Devices 5 POWER MANAGEMENT


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    PDF EP210S EP140 ONDISPLAY3Q01/D smps circuit diagram mc12140 20100ct motorola analog ICs vol.2 NBSG16 OC192 smps based 45 watt inverter AND8071 NBSG14 spice germanium diode

    1070 SGS transistor

    Abstract: SG16VS
    Text: NBSG16VS 2.5V/3.3V SiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities. This device may be


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    PDF NBSG16VS SG16VS EP16VS NBSG16VS AND8020 1070 SGS transistor

    SG86A

    Abstract: No abstract text available
    Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi-function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a


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    PDF NBSG86A 16-pin, NBSG86A AND8020 SG86A

    NBSG16VS

    Abstract: NBSG16VSBA NBSG16VSBAR2 1070 SGS transistor 1070 SGS S/NBSG16VS
    Text: NBSG16VS 2.5V/3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities. This device may be


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    PDF NBSG16VS SG16VS EP16VS r14525 NBSG16VS/D NBSG16VS NBSG16VSBA NBSG16VSBAR2 1070 SGS transistor 1070 SGS S/NBSG16VS

    T22600

    Abstract: No abstract text available
    Text: NBSG16VS 2.5V/3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities. This device may be


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    PDF NBSG16VS SG16VS EP16VS r14525 NBSG16VS/D T22600

    transistor 9716

    Abstract: photodiode 10Ghz PIN
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN

    optical receiver -25dbm 10ghz

    Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
    Text: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication


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    PDF 10Gbps, 150mW -18dBm 00V/A MAX3970U/D OC-192 345mm) 864mm) optical receiver -25dbm 10ghz photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716

    germanium photodiode PIN

    Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
    Text: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    PDF 10Gbps, 150mW -18dBm 90V/A MAX3970U/D OC-192 345mm) 864mm) germanium photodiode PIN photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz

    transistor 9716

    Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11

    Untitled

    Abstract: No abstract text available
    Text: NBSG86A 2.5V/3.3VĄSiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi–function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a


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    PDF NBSG86A r14525 NBSG86A/D

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


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    PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159