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    GERMANIUM POWER Search Results

    GERMANIUM POWER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AC188

    Abstract: AD156 AUY10 OC23 AC188-01 2N4106 AD157 ac128 2S8473 ADY20
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 < NthAmerSemi Germanium See Index Space Power SemieonTech Solid Stine Solid Stine Solid Stine Solid Stine NthAmerSemi ~g~~~ ~ermanlum Germanium NthAmerSemi NthAmerSemi Germanium Germanium NthAmerSemi


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    PDF ADY10 2N2786 2N1940 2S8180 2S8466 2S863 2S8467 ADY12 AC188 AD156 AUY10 OC23 AC188-01 2N4106 AD157 ac128 2S8473 ADY20

    ADZ12

    Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318


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    PDF 2Nl147A 2NS778 2N1358A DTG2100 COT9408 DTG1040 2NS788 2N2075 2N2075A 2N314S ADZ12 DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A

    ad143

    Abstract: ASZ15 ASZ18 AUY37 ASZ16 GT906AM AUY35 AU113 ASZ17 AUY22A
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 20 30 35 40 45 50 60 65 70 -75 80 - 85 90 Min See Index Germanium NthAmerSemi NthAmerSemi CentralSemi NthAmerSemi Germanium See Index See Index Germanium Max .(Hz) ~Y.D~a ~ml 75 250 60 22 25 25 25 32 32


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    PDF 2N5900 MP3730A ADY25 AD159 AD138 ASZ17 ASZ18 CTP1306 ad143 ASZ15 AUY37 ASZ16 GT906AM AUY35 AU113 AUY22A

    Untitled

    Abstract: No abstract text available
    Text: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar


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    PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263Z

    SGA-1263Z

    Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a

    TO36 package

    Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A


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    PDF 2N173 2N1358 2N174A 2N1549 MP1549 2N1549A 2N677 2N1553 2N1553A MP1553 TO36 package 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium

    Untitled

    Abstract: No abstract text available
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS111011

    SGA1263Z

    Abstract: SGA1263
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


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    PDF SGA1263Z DCto4000MH SGA1263Z DCto4000MHz OT-363 50GHz DS111011 SGA1263

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


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    PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


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    PDF NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3

    NTE105

    Abstract: TO36 package pnp germanium to36 Germanium power
    Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V


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    PDF NTE105 NTE105 TO36 package pnp germanium to36 Germanium power

    NTE131MP

    Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
    Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.


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    PDF NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power

    germanium transistor pnp

    Abstract: nte213
    Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:


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    PDF NTE213 NTE213 500mA germanium transistor pnp

    "PNP Transistor"

    Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
    Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


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    PDF NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor

    MARKING HBT

    Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


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    PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor

    Untitled

    Abstract: No abstract text available
    Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.


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    PDF 2N4277 -15Ade, -20Vde,

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.


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    PDF PC3244TB R09DS0015EJ0100 PC3244TB

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.


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    PDF PC3244TB R09DS0015EJ0100 PC3244TB

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


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    PDF NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


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    PDF NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power

    NTE104M

    Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
    Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified


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    PDF NTE104 NTE104 NTE104M NTE104MP transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor

    MP3731

    Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
    Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed


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    PDF MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP

    MR830

    Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
    Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —


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    PDF MP600 MP603 MP600 MP601 MP602 MP603 MR830 germanium power transistors Germanium power

    motorola MP2400A

    Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
    Text: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction


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    PDF MP2000A MP2100A MP2200A MP2300A MP2400A MP2400A motorola MP2400A Motorola germanium transistor pnp AN-415 Germanium power