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    GERMANIUM PNP TRANSISTOR Search Results

    GERMANIUM PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE131MP

    Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
    Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.


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    NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power PDF

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


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    MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426 PDF

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


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    NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3 PDF

    germanium transistor pnp

    Abstract: nte213
    Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:


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    NTE213 NTE213 500mA germanium transistor pnp PDF

    NTE105

    Abstract: TO36 package pnp germanium to36 Germanium power
    Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V


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    NTE105 NTE105 TO36 package pnp germanium to36 Germanium power PDF

    "PNP Transistor"

    Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
    Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


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    NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor PDF

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


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    NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power PDF

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


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    NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power PDF

    pnp germanium to36

    Abstract: NTE330 Germanium power
    Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.


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    NTE330 NTE330 pnp germanium to36 Germanium power PDF

    NTE104M

    Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
    Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified


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    NTE104 NTE104 NTE104M NTE104MP transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor PDF

    NTE158

    Abstract: germanium pnp transistor Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


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    NTE158 NTE158 300mA germanium pnp transistor Germanium power PDF

    NTE158

    Abstract: germanium audio Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


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    NTE158 NTE158 300mA germanium audio Germanium power PDF

    NTE158

    Abstract: Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


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    NTE158 NTE158 300mA Germanium power PDF

    NTE121MP

    Abstract: NTE121 GERMANIUM ie 10a germanium pnp transistor Germanium power
    Text: NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified


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    NTE121 NTE121 NTE121MP GERMANIUM ie 10a germanium pnp transistor Germanium power PDF

    NTE102A

    Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium PDF

    oscillator pnp 800MHZ

    Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
    Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V


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    NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power PDF

    MP3731

    Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
    Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed


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    MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP PDF

    transistor WL 431

    Abstract: 2N700A BUV pnp 50a MW1131
    Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,


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    MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131 PDF

    pnp germanium transistor

    Abstract: transistor YA 2N398A Transistor 2N398 pnp germanium transistor 2N398 transistor case To 105 2N398 Germanium Transistor 2N398B germanium transistor pnp
    Text: 2N398 2N398A 2N398B ♦I Central Sem iconductor Corp. Central semiconductor Corp. PNP GERMANIUM TRANSISTOR 145 Adams Avenue Hauppauge, New York 11 788 JEDEC TO-5 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N398 Series types are PNP Germanium Transistors designed


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    2N398 2N398A 2N398B 2N398 2N398A 2N398B 11MS2 pnp germanium transistor transistor YA Transistor 2N398 pnp germanium transistor 2N398 transistor case To 105 Germanium Transistor germanium transistor pnp PDF

    CBC 557 C

    Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
    Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB


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    AF279

    Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
    Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB


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    AF280

    Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
    Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:


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    AF 109 R

    Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
    Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB


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    AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor PDF

    AF239

    Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
    Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz


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