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    GENERAL SEMICONDUCTOR MARKING UM SMA Search Results

    GENERAL SEMICONDUCTOR MARKING UM SMA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING UM SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: RECTIFIER marking UG 08 us1d US1A
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


    Original     		PDF DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 50mVp-p 05-Aug-05 GENERAL SEMICONDUCTOR MARKING UJ SMA RECTIFIER marking UG 08 us1d US1A

    GENERAL SEMICONDUCTOR MARKING uj sma

    Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 50mVp-p 18-Feb-04 GENERAL SEMICONDUCTOR MARKING uj sma GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM

    Untitled

    Abstract: No abstract text available
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 02-Jul-02

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
    Text: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)


    Original     		PDF DO-214AC 50mVp-p 20-Mar-03 GENERAL SEMICONDUCTOR MARKING UJ SMA GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D J-STD-002B
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •


    Original     		PDF DO-214AC UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 GENERAL SEMICONDUCTOR MARKING UJ SMA vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 Small Package (Dual Type) Ih — High hpE -I o JJ Tl CO i T-; in ID O V - <o , 1 : J 1 5 + I 0 ,6 5 High Voltage and High Current


    OCR Scan     		PDF 2SA1873 150mA 2SC4944 961001EAA2'

    JDP2S01E

    Abstract: No abstract text available
    Text: TO SH IBA JDP2S01E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01E Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.


    OCR Scan     		PDF JDP2S01E JDP2S01E

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA JDP2S01U TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01U UHF-VHF BAND RF ATTENUATOR APPLICATIONS Unit in mm Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. + 0.2 1.25-0.1 1-1 Low Capacitance


    OCR Scan     		PDF JDP2S01U

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA JDP2S01E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01E Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.


    OCR Scan     		PDF JDP2S01E

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA JDP2S04E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S04E Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS • • Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Capacitance Ratio : CT = 0.25 pF Typ.


    OCR Scan     		PDF JDP2S04E

    HP4291A

    Abstract: JDP2S01T
    Text: TOSHIBA JDP2S01T JDP2S01T TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.


    OCR Scan     		PDF JDP2S01T HP4291A HP4291A JDP2S01T

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 S V2 7 6 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.0 Typ. Low Series Resistance : r$ = 0.22il (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV276

    2SA1203

    Abstract: 2SC2883
    Text: TO SH IBA 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package


    OCR Scan     		PDF 2SC2883 2SA1203 250mm2 2SA1203 2SC2883

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS388 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 s S 3 88 HIGH SPEED SWITCHING APPLICATION U nit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (Typ.) • Low Reverse Current : I r = 5/./Á (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS388

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV313

    1SV314

    Abstract: No abstract text available
    Text: 1SV314 TOSHIBA 1 SV3 14 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV314 1SV314

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1S S 18 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.5 • Small Package : SC-59 • Low Forward Voltage : Vjr 3 = 0.92V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capacitance


    OCR Scan     		PDF 1SS181 SC-59 01juF 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0 .4 0 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV214

    marking 15C SMA TVS

    Abstract: SMA 22a general semiconductor D Q B 91A 100A 110A 120A 130A 150A
    Text: a G en era l “v 5 S e m ic o n d u c to r" P4SMA6.8Athru P4SMA220CA Surface Mount T ra n s Z o rb Transient Voltage Suppressors DO-214AC SMA Breakdown Voltage 6.8 to 220V Peak Pulse Power 400W ^ -C a th o d e Band 0. 0 6 5 ( 1.65 ) Mounting Pad Layout


    OCR Scan     		PDF P4SMA220CA DO-214AC IEC801-2) DO-214AC 10/1000nsec. marking 15C SMA TVS SMA 22a general semiconductor D Q B 91A 100A 110A 120A 130A 150A

    2SK1829

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 829 Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package


    OCR Scan     		PDF 2SK1829 SC-70 10//S 2SK1829

    transistor 4213

    Abstract: 2SC4213 SC4213
    Text: 2SC4213 TO SH IBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package Ve BO = 25V (Min.)


    OCR Scan     		PDF 2SC4213 SC4213 transistor 4213 2SC4213 SC4213

    100S

    Abstract: 1N4148WS BAV16WS VISHAY 1N4148WS Rev
    Text: PRELIM INARY 1N4148WS / BAV16WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE LITEM ZI Ì POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H I /k B


    OCR Scan     		PDF 1N4148WS BAV16WS OD-323, MIL-STD-202, OD-323 DS30097 100S BAV16WS VISHAY 1N4148WS Rev

    2SK1830

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1830 10//S 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5i2 (Typ.) MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING


    OCR Scan     		PDF 1SS314 100MHz