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    GENERAL SEMICONDUCTOR MARKING GG Search Results

    GENERAL SEMICONDUCTOR MARKING GG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING GG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    DO-214AA 386

    Abstract: gez general semiconductor 94V-0 LG JESD22-B102D J-STD-002B SMBJ10CA SMBJ188CA SMBJ30A DO-214AA BFM 17 625 GFG
    Text: SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMBJ188CA DO-214AA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO-214AA 386 gez general semiconductor 94V-0 LG JESD22-B102D J-STD-002B SMBJ10CA SMBJ188CA SMBJ30A DO-214AA BFM 17 625 GFG

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    smcj bfk

    Abstract: transzorb marking code GEM JESD22-B102 J-STD-002 SMCJ10 SMCJ10A SMCJ188CA GEZ VISHAY
    Text: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMCJ188CA J-STD-020, DO-214AB 2002/95/EC 2002/96/EC smcj bfk transzorb marking code GEM JESD22-B102 J-STD-002 SMCJ10 SMCJ10A SMCJ188CA GEZ VISHAY

    Untitled

    Abstract: No abstract text available
    Text: SMCG5.0 thru SMCG188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMCG188CA DO-215AB J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05

    2SK879

    Abstract: a63m
    Text: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)


    OCR Scan     		PDF 2SK879 120Hz) SC-70 2SK879 a63m

    3SK260

    Abstract: EE 45 bobbin
    Text: TO SH IBA 3SK260 TOSHIBA FIELD EFFECT TRANSISTOR TV TUNER VHF MIXER APPLICATIONS SILICON N CHANNEL DUAL GATE MOS TYPE 3SK260 VHF RF AMPLIFIER APPLICATIONS • • High Conversion Gain : GGg = 24.5dB Typ. Low Noise Figure : NFGg = 3.3dB (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 3SK260 3SK260 EE 45 bobbin

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS High Breakdown Voltage : Vj gg= —180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan     		PDF 2SJ338 --180V 2SK2162 --10mA,

    2SK2467-Y

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y HIGH POWER AMPLIFIER APPLICATION • • Unit in mm 02.6 + 0.2 15.8 + 0.5 High Breakdown Voltage : Vj gg = 180V 3.5 JiK. High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)


    OCR Scan     		PDF 2SK2467-Y 2SK2467-Y

    toshiba lot number type

    Abstract: 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ
    Text: T O S H IB A 2SJ440-Y 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SJ440-Y toshiba lot number type 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


    OCR Scan     		PDF GG0334G MT5C6401 22-Pin 000334b

    2SK1530

    Abstract: 2SJ201
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201


    OCR Scan     		PDF 2SK1530 2SJ201 2SK1530

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDU CTOR INC b?E D • b 1115 ^ GGOTMSfl 22b ■ MRN PRELIMINARY MT5LC256K4D4 REVOLUTIONARY PINOUT 256K x 4 SRAM SRAM 256K x 4 SRAM 3.3V OPERATION WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View • All I/O pins are 5V tolerant


    OCR Scan     		PDF MT5LC256K4D4 32-Pin

    N2A-2

    Abstract: RF1X D3/HS 2303
    Text: SIEMENS ICs for Communications Dual 2GigaPLL PMB 2303 V1.0 Target Specification 4.95 fl23SbOS GG7fll07 314 PMB 2303 Revision History Previous Releases: Page 4.95 ♦ none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible


    OCR Scan     		PDF fl23SbOS GG7fll07 P-TSSOP-20-1 fl235bOS N2A-2 RF1X D3/HS 2303

    2SK2718

    Abstract: transistor 2sk2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)


    OCR Scan     		PDF 2SK2718 100//A 2SK2718 transistor 2sk2718

    IC 4011

    Abstract: 1N4376 282-C diode rectifier 1n 4001 1N4376 JAN Scans-0016000
    Text: MIL SP ECS MME D • 0 0 G 0 12 S GGanSD 5 ■MILS I I I INCH-POUND I I_ 1 MIL-S-19500/282C 23 June 1992 SUPERSEDING MIL-S-19500/282B 31 January 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4376 JAN AND JANTX


    OCR Scan     		PDF 000012S MIL-S-19500/282C MIL-S-19500/282B 1N4376 MIL-S-19500. GG001Z5 MIL-S-19500/282C IC 4011 282-C diode rectifier 1n 4001 1N4376 JAN Scans-0016000

    Untitled

    Abstract: No abstract text available
    Text: MI CR ON S E M I C O N D U C T O R INC b?E T> • b l l l S M ^ GGOTbSfl 3SG ■ MRN ADVANCE m i c r o n 32K X M T58LC 32K 36A 6 36 SY N C H R O N O U S SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • •


    OCR Scan     		PDF T58LC 680X0 MT58LC32K36A6LG-10 64-bit MT58LC32K36A6LG-7 MT56LC32K36A6

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF GG07b0S MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA

    Untitled

    Abstract: No abstract text available
    Text: b4E D • 7SR73bG RAYTHEON/ TMC2330 GGDfibOl 3 0 b « R T N SEMICONDUCTOR - TMC2330 CMOS Coordinate Transformer Description 16-bit user-selectable two's complement or sign-andmagnitude rectangular data formats Input register clock enables and asynchronous output


    OCR Scan     		PDF 7SR73bG TMC2330 16-bit 120-pin 132-leaded TMC2330

    Untitled

    Abstract: No abstract text available
    Text: Central" semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica­


    OCR Scan     		PDF CMPT3019 OT-23 100mA, 13-November OT-23

    marking code 697

    Abstract: No abstract text available
    Text: Central" Semiconductor Corp. CZT4033 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur­ rent general purpose amplifier applications.


    OCR Scan     		PDF CZT4033 OT-223 CP705 14-November OT-223 marking code 697

    Untitled

    Abstract: No abstract text available
    Text: Central" Semiconductor Corp. CZT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high cur­ rent general purpose amplifier applications.


    OCR Scan     		PDF CZT3019 OT-223 CP305 26-September OT-223