Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GENERAL SEMICONDUCTOR MARKING ED Search Results

    GENERAL SEMICONDUCTOR MARKING ED Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING ED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    JANTX1N5719

    Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
    Text: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess


    Original     		PDF MIL-PRF-19500/443 037Z3 JANTX1N5719 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001

    TVS marking ED VISHAY

    Abstract: TVS marking code ED VISHAY
    Text: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout


    Original     		PDF BZD27 DO-219AB DO-219 G1-10K 50K/box 30K/box 08-Apr-05 TVS marking ED VISHAY TVS marking code ED VISHAY

    c4v7p

    Abstract: C6V2P Bz027 c15p zener c47p c5v6p BZD27-C4V7P BZD27-C6V8P C18p c51p
    Text: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout


    Original     		PDF BZD27 DO-219AB DO-219 G1-10K 50K/box 30K/box 18-Jul-08 c4v7p C6V2P Bz027 c15p zener c47p c5v6p BZD27-C4V7P BZD27-C6V8P C18p c51p

    026B

    Abstract: MC12022 MC12026 MC12026A MC12026AD MC12026ADR2
    Text: MC12026A 1.1 GHz Dual Modulus Prescaler The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase–locked loop PLL applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal counters in a PLL to provide tuning


    Original     		PDF MC12026A MC12026 MC12026A r14525 MC12026A/D 026B MC12022 MC12026AD MC12026ADR2

    GF1G

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C 10-Aug-05 GF1G

    XK power 220

    Abstract: SMZJ3788 SMZJ3788A SMZJ3789A SMZJ3790A SMZJ3791A SMZJ3792A SMZJ3809B
    Text: SMZJ3788 thru SMZJ3809B Vishay Semiconductors formerly General Semiconductor Surface Mount Power Voltage-Regulating Diodes Zener Voltage 9.1 to 68V Steady State Power 1.5W DO-214AA SMBJ-Bend e g a lt o V ed e d n Exte Rang Cathode Band 0.155 (3.94) 0.130 (3.30)


    Original     		PDF SMZJ3788 SMZJ3809B DO-214AA 09-Oct-02 XK power 220 SMZJ3788A SMZJ3789A SMZJ3790A SMZJ3791A SMZJ3792A SMZJ3809B

    Untitled

    Abstract: No abstract text available
    Text: New Product BYD13DGP thru BYD13MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation


    Original     		PDF BYD13DGP BYD13MGP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    74xx163

    Abstract: TRANSISTOR AC125 74xx138 yb4 bridge diode 74ACT161 ac373 motorola 74ACT640 ACT163 10125 ecl to ttl 74ACT244
    Text: DL138/D Rev. 4, May-2001 FACT Device Data FACT Device Data 05/01 DL138 REV 4 FACT Device Data DL138/D Rev. 4, Jun–2001  SCILLC, 2001 Previous Edition  1993 “All Rights Reserved” FACT is a trademark of National Semiconductor Corporation. MOSAIC is a trademark of Motorola, Inc.


    Original     		PDF DL138/D May-2001 DL138 r14525 74xx163 TRANSISTOR AC125 74xx138 yb4 bridge diode 74ACT161 ac373 motorola 74ACT640 ACT163 10125 ecl to ttl 74ACT244

    D65019

    Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
    Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100


    Original     		PDF MIL-S-19500/322 ASME-14 037Z3 D65019 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR 1N23WG

    SMBG10

    Abstract: SMBJ10C SMBJ10CA KD 271
    Text: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG Cathode Band Stand-off Voltage 5.0 to 188V Peak Pulse Power 600W ed e d n Exte e Rang ag t l o V Mounting Pad Layout


    Original     		PDF 188CA DO-215AA 24-Jul-03 SMBG10 SMBJ10C SMBJ10CA KD 271

    4000 SERIES MOTOROLA

    Abstract: 74AC4040 diode sg 5 ts MC74AC373 MC74ACT02 MC74ACT04 MC74ACT05 MC74AC00 MC74AC02 MC74AC05
    Text: DL138/D Rev. 5, Dec-2002 FACT Device Data FACT Device Data DL138/D Rev. 5, Dec–2002  SCILLC, 2002 Previous Edition  2001 “All Rights Reserved” FACT is a trademark of National Semiconductor Corporation. MOSAIC is a trademark of Motorola, Inc. ON Semiconductor and


    Original     		PDF DL138/D Dec-2002 r14525 4000 SERIES MOTOROLA 74AC4040 diode sg 5 ts MC74AC373 MC74ACT02 MC74ACT04 MC74ACT05 MC74AC00 MC74AC02 MC74AC05

    DO-214BA

    Abstract: No abstract text available
    Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat


    Original     		PDF DO-214BA MIL-S-19500 10-Aug-05 DO-214BA

    GF1G

    Abstract: DO-214BA JESD22-B102D J-STD-002B
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19ed 08-Apr-05 GF1G DO-214BA JESD22-B102D J-STD-002B

    label infineon lot number

    Abstract: zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth KP12x matlab washing machine
    Text: KP12x Barometric Air Pressure Sensors Freq uent ly Asked Quest i ons App lication No te Rev. 1.1, 2009-06-01 Sense & Control Edition 2009-06-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		PDF KP12x KP12x KP12x-Absolute label infineon lot number zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth matlab washing machine

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin

    CK 66 UL 94V-0

    Abstract: MZ 197 3 Volt transzorb CK 66 94V-0 KM MARKING SMBG10 SMBJ10C SMBJ10CA
    Text: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG 0.083 (2.10) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) ed e d n Exte e Rang ag t l o V Mounting Pad Layout Dimensions in inches


    Original     		PDF 188CA DO-215AA 26-Sep-02 CK 66 UL 94V-0 MZ 197 3 Volt transzorb CK 66 94V-0 KM MARKING SMBG10 SMBJ10C SMBJ10CA

    Z11 Marking Code

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin TQM8M9079 Z11 Marking Code

    rf spdt mhz dbm

    Abstract: "RF Switch" SMD MARKING CODE SEIKO EPSON INFINEON trace code label marking code samsung SMD ag 20 taiyo ARM926EJ-S BGS12AL7-6 MIPS32 IEC61340-3-1
    Text: BGS12AL7-6 SPDT RF Switch Data Sheet Revision 1.2, 2009-04-22 Preliminary Industrial & Multimarket Edition 2009-04-22 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF BGS12AL7-6 BGS12 12AL7 rf spdt mhz dbm "RF Switch" SMD MARKING CODE SEIKO EPSON INFINEON trace code label marking code samsung SMD ag 20 taiyo ARM926EJ-S BGS12AL7-6 MIPS32 IEC61340-3-1

    Untitled

    Abstract: No abstract text available
    Text: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation


    Original     		PDF BYD13DGP BYD13MGP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    1N21WE

    Abstract: 1N21WEM 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058
    Text: . REVISIONS LTR DESCRIPTION Change supplier, validate, editorial changes A DATE APPROVED 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. THIS DRAWING WAS REVIEWED ON 18 FEBRUARY


    Original     		PDF MIL-S-19500/232 MIL-S-19500/232. MIL-STD-100 1N21WE, 1N21WEM 1N21WEMR 00005-1N21WE 00005-1N21WEM 00005-1N21WEMR UXAN1N21WE 1N21WE 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 OT-23 20-February OT-23

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 1001OV, 100MHz 20-February OT-23 OT-23