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    1N21WEM Search Results

    1N21WEM Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N21WEM MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N21WEM Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N21WEM Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N21WEM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N21WEMR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N21WEMR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N21WEMR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N21WEM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N21WE

    Abstract: 1N21WEM 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058
    Text: . REVISIONS LTR DESCRIPTION Change supplier, validate, editorial changes A DATE APPROVED 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. THIS DRAWING WAS REVIEWED ON 18 FEBRUARY


    Original     		PDF MIL-S-19500/232 MIL-S-19500/232. MIL-STD-100 1N21WE, 1N21WEM 1N21WEMR 00005-1N21WE 00005-1N21WEM 00005-1N21WEMR UXAN1N21WE 1N21WE 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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