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    GENERAL SEMICONDUCTOR DIODE MARKING S2 Search Results

    GENERAL SEMICONDUCTOR DIODE MARKING S2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR DIODE MARKING S2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSF4953

    Abstract: SOP-8 4953 circuit 4953 G2 marking 1324NS
    Text: SSF4953 DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G2 G1 S1 S2 Schematic diagram


    Original     		PDF SSF4953 SSF4953 SOP-8 4953 circuit 4953 G2 marking 1324NS

    SOT23-6

    Abstract: SSF2485 SOT23-6 MARKING g2 Marking D2 SOT23-6 SOT23-6 g2 D1 Marking SOT23-6 TOP marking sot23-6
    Text: SSF2485 D1 DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. D2 G1 G2 S1 S2 Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 150mΩ @ VGS=-2.5V


    Original     		PDF SSF2485 SSF2485 OT23-6 180mm SOT23-6 SOT23-6 MARKING g2 Marking D2 SOT23-6 SOT23-6 g2 D1 Marking SOT23-6 TOP marking sot23-6

    SOP-8

    Abstract: SSF3637
    Text: SSF3637 DESCRIPTION D1 The SSF3637 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G2 G1 S1 S2 Schematic diagram


    Original     		PDF SSF3637 SSF3637 SOP-8

    TRANSISTOR SMD MARKING CODE

    Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
    Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose


    Original     		PDF 100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE

    FAIRCHILD SMD MARKING

    Abstract: 1N4148WS Small Signal Diodes 1N4448WS fairchild smd marking code 1N914BWS smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • • • • • • • Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 General Purpose Diodes Fast switching Device TRR < 4.0 ns Very Small and Thin SMD package Moisture Level Sensitivity 1


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS 1N4148WS 1N4448WS OD-323F 1N914BWS FAIRCHILD SMD MARKING Small Signal Diodes fairchild smd marking code smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS

    S2055N equivalent

    Abstract: S2055N transistor s2055n 2-16E3A 2-16E3A package Toshiba S20
    Text: S2055N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055N COLOR TV HORIZONTAL OUTPUT APPLICATIONS z High Voltage : VCES = 1500 V z Low Saturation Voltage : VCE sat = 5 V (Max.) z High Speed : tf = 0.3µs (Typ.) Unit: mm z Built−in Damper Type


    Original     		PDF S2055N S2055N equivalent S2055N transistor s2055n 2-16E3A 2-16E3A package Toshiba S20

    S2055N equivalent

    Abstract: s2055n transistor s2055n tv ic equivalent 2-16E3A Toshiba S20 s2055n transistor
    Text: S2055N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055N COLOR TV HORIZONTAL OUTPUT APPLICATIONS High Voltage : VCES = 1500 V Low Saturation Voltage : VCE sat = 5 V (Max.) High Speed : tf = 0.3µs (Typ.) Unit: mm Built−in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.


    Original     		PDF S2055N S2055N equivalent s2055n transistor s2055n tv ic equivalent 2-16E3A Toshiba S20 s2055n transistor

    Untitled

    Abstract: No abstract text available
    Text: – SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310Q S2 SOD-523 unit : mm 1.50~1.70 1.10~1.30 0.70~0.90 0.32 Max. Outline Dimensions


    Original     		PDF SDB310Q OD-523 KSD-D6D004-000

    N-Channel 2.5V

    Abstract: fdc6000nz
    Text: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDC6000NZ FDC6000NZ N-Channel 2.5V

    Untitled

    Abstract: No abstract text available
    Text: FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch Q1 is designed with specific emphasis on


    Original     		PDF FDQ7238AS SO-14 FDQ7238AS SO-14 SO-14-14

    DIODE s2l

    Abstract: S2L DIODE "S2L" DIODE DIODE "s2l" diode SOD-323 DIODE s2l 11 marking code 17 surface mount diode schottky diode DIODE CMDSH2-4L
    Text: Central CMDSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-4L is a HIGH CURRENT, LOW VF 40 volt Schottky diode packaged in a space saving SOD-323 surface mount case. This


    Original     		PDF OD-323 100mA 200mA 17-September DIODE s2l S2L DIODE "S2L" DIODE DIODE "s2l" diode SOD-323 DIODE s2l 11 marking code 17 surface mount diode schottky diode DIODE CMDSH2-4L

    Untitled

    Abstract: No abstract text available
    Text: S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop


    Original     		PDF J-STD-020, DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    8205 A mosfet

    Abstract: 8205 mosfet
    Text: Datasheet N-Channel Enhancement Mode Power MOSFET TDM8205 Description D1 D2 The TDM8205 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF TDM8205 TDM8205 OT23-6L 8205 A mosfet 8205 mosfet

    9945 so8

    Abstract: 9945 So-8 fds9945
    Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDS9945 FDS9945 9945 so8 9945 So-8

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a


    Original     		PDF TDM4953 TDM4953

    S17B

    Abstract: 1N5817 593D 594D LM2767 LM2767M5 LM2767M5X MA05B MBR0520LT1 Switched Capacitor Voltage Converter
    Text: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.


    Original     		PDF LM2767 LM2767 OT23-5 CSP-9-111S2) CSP-9-111S2. S17B 1N5817 593D 594D LM2767M5 LM2767M5X MA05B MBR0520LT1 Switched Capacitor Voltage Converter

    s17b

    Abstract: S17-B S3 marking DIODE s4 vishay sanyo low esr capacitors top marking c2 sot23 LM2767 LM2767M5 LM2767M5X MA05B
    Text: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.


    Original     		PDF LM2767 LM2767 OT23-5 s17b S17-B S3 marking DIODE s4 vishay sanyo low esr capacitors top marking c2 sot23 LM2767M5 LM2767M5X MA05B

    Untitled

    Abstract: No abstract text available
    Text: FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS ON = 123 m: @ VGS = 4.5 V „ RDS(ON) = 140 m: @ VGS = 3.0 V solution for dual switching requirements in cellular


    Original     		PDF FDMA2002NZ

    6892a

    Abstract: No abstract text available
    Text: FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS6892A FDS6892A NF073 6892a

    RCA 4559 NO

    Abstract: FDS4559 QT Optoelectronics
    Text: FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		PDF FDS4559 FDS4559 RCA 4559 NO QT Optoelectronics

    diode s2m

    Abstract: No abstract text available
    Text: S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current


    Original     		PDF J-STD-020, DO-214AA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode s2m

    LP2980-3.3

    Abstract: nichicon pf SERIES LP2980-3 LM2765 SOT23-6 LP2980-5.0 MOSFET N SOT23-6 S3 marking DIODE S4 DIODE schottky s4 vishay
    Text: LM2765 Switched Capacitor Voltage Converter General Description Features The LM2765 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide up to 20 mA of output current.


    Original     		PDF LM2765 LM2765 OT-23-6 OT23-6 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. LP2980-3.3 nichicon pf SERIES LP2980-3 SOT23-6 LP2980-5.0 MOSFET N SOT23-6 S3 marking DIODE S4 DIODE schottky s4 vishay

    S17B

    Abstract: LM2767 LM2767M5 LM2767M5X MA05B
    Text: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.


    Original     		PDF LM2767 LM2767 OT23-5 S17B LM2767M5 LM2767M5X MA05B

    toshiba diode 1A

    Abstract: 1SS268
    Text: 1SS268 TOSHIBA 1 S S2 6 8 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS268 SC-59 toshiba diode 1A 1SS268