2SC4546
Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A
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2SC4546
Pulse14)
10typ
55typ
400min
100max
O220F)
2SC4546
FM20
vbe 12v, vce 600v NPN Transistor
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transistor npn high speed switching 5A 600v
Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A
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2SC4546
Pulse14)
10typ
55typ
400min
100max
O220F)
transistor npn high speed switching 5A 600v
2SC4546
FM20
vbe 12v, vce 600v NPN Transistor
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2SA1826
Abstract: 2SC4730
Text: Ordering number:ENN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm
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ENN3878
2SA1826/2SC4730
00V/3A
2084B
2SA1826/2SC4730]
2SA1826
2SA1826
2SC4730
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2SA1826
Abstract: No abstract text available
Text: Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm
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EN3878
2SA1826/2SC4730
00V/3A
2SA1826/2SC4730]
2SA1826
2SA1826
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor http://onsemi.com – 100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications
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EN2539C
2SB1215/2SD1815
2SB1215/2SD1815-applied
2SB1215
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-251
QW-R213-009
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transistor 2sD1060
Abstract: npn transistor 3A 2SD1060
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-220
QW-R203-016
transistor 2sD1060
npn transistor 3A
2SD1060
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-126
QW-R204-012
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2SD1060
Abstract: transistor 2sD1060
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
OT-89
QW-R208-023
2SD1060
transistor 2sD1060
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-252
QW-R209-002
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GESD1060
Abstract: No abstract text available
Text: ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,
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GESD1060
GESD1060
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GI1060
Abstract: GIJ1060
Text: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,
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GI1060
GIJ1060
O-251
GI1060
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE sat NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A
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EN686K
2SD1060
O-220-3L
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NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.
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NTE109
NTE116
NTE123AP
NTE125
NTE128P
NTE2396
NTE2397
NTE2398
NTE5127A
NTE5304
NTE135A
NTE116 cross reference
transistor power
NTE2396
2 Amp rectifier diode
NTE5127A
nte159
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2SD837
Abstract: "Audio Power Amplifiers" Darlington NPN Silicon Diode data transistor darlington for High Power Audio general npn 3A high speed high hfe
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min. @IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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2SD837
2SD837
"Audio Power Amplifiers"
Darlington NPN Silicon Diode
data transistor darlington for High Power Audio
general npn 3A high speed high hfe
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NPN Transistor VCEO 80V 100V
Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF
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BDT31F/AF/BF/CF/DF
BDT31F;
BDT31AF
BDT31BF;
BDT31CF
BDT31DF
BDT32F/AF/BF/CF/DF
BDT31F
BDT31BF
NPN Transistor VCEO 80V 100V
BDT31F
BDT31AF
BDT31BF
BDT31CF
BDT31DF
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2SC4130
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC4130
O-220F
O-220F)
2SC4130
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2SC3832
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1
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2SC3832
O-220C
2SC3832
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2SC4130
Abstract: ic 3A hfe 500 2SC413
Text: Inchange Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC4130
O-220F
O-220F)
2SC4130
ic 3A hfe 500
2SC413
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2SC3832
Abstract: general npn 3A high speed
Text: SavantIC Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC3832
O-220C
2SC3832
general npn 3A high speed
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BDW42
Abstract: BDW47 147 B transistor npn DARLINGTON 10A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A
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BDW47
BDW42
BDW47
147 B transistor
npn DARLINGTON 10A
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rl66
Abstract: 2SC3890 Rl-66 TO-220F
Text: Inchange Semiconductor Product Specification 2SC3890 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC3890
O-220F
O-220F)
rl66
2SC3890
Rl-66
TO-220F
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C4730
Abstract: CQ 730 2SA1826 2SC4730 MR100-A
Text: Ordering number: EN3878 2SA1826/2SC4730 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications A pplications •Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatu re s ■Low collector-to-emitter saturation voltage.
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EN3878
2SA1826/2SC4730
00V/3A
2SA1826
C4730
CQ 730
2SA1826
2SC4730
MR100-A
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sem 5020
Abstract: No abstract text available
Text: ^ General ^ 2 ^ Sem iconductor ^ - Industries, Inc. HIGH POWER NPN twitch P GSTU15018 G S T U 1 5020 /tft TRANSISTORS NPN 180, 200, V 15 AMP SWITCHING tf — 200ns TYPICAL The GSTU series of NPN transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R®
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GSTU15018
200ns
sem 5020
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