2SC4546
Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A
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2SC4546
Pulse14)
10typ
55typ
400min
100max
O220F)
2SC4546
FM20
vbe 12v, vce 600v NPN Transistor
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transistor npn high speed switching 5A 600v
Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A
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Original
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2SC4546
Pulse14)
10typ
55typ
400min
100max
O220F)
transistor npn high speed switching 5A 600v
2SC4546
FM20
vbe 12v, vce 600v NPN Transistor
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2SA1826
Abstract: 2SC4730
Text: Ordering number:ENN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm
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ENN3878
2SA1826/2SC4730
00V/3A
2084B
2SA1826/2SC4730]
2SA1826
2SA1826
2SC4730
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PDF
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2SA1826
Abstract: No abstract text available
Text: Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm
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EN3878
2SA1826/2SC4730
00V/3A
2SA1826/2SC4730]
2SA1826
2SA1826
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-251
QW-R213-009
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transistor 2sD1060
Abstract: npn transistor 3A 2SD1060
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-220
QW-R203-016
transistor 2sD1060
npn transistor 3A
2SD1060
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-126
QW-R204-012
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2SD1060
Abstract: transistor 2sD1060
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
OT-89
QW-R208-023
2SD1060
transistor 2sD1060
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
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2SD1060
O-252
QW-R209-002
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor http://onsemi.com – 100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications
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EN2539C
2SB1215/2SD1815
2SB1215/2SD1815-applied
2SB1215
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419B-02
Abstract: SMD310
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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200X400
SC-88
419B-02
SMD310
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HN1B01FDW1T1
Abstract: 318F SMD310
Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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HN1B01FDW1T1
200X400
HN1B01FDW1T1/D
HN1B01FDW1T1
318F
SMD310
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PDF
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Untitled
Abstract: No abstract text available
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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200X400
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PDF
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Untitled
Abstract: No abstract text available
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A
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200X400
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On Semiconductor MARKING DIAGRAM SOD-123
Abstract: No abstract text available
Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A
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HN1B01FDW1T1
200X400
SC-74
On Semiconductor MARKING DIAGRAM SOD-123
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PDF
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318F
Abstract: HN1B01FDW1T1 SMD310
Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: 3A
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HN1B01FDW1T1
200X400
r14525
HN1B01FDW1T1/D
318F
HN1B01FDW1T1
SMD310
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PDF
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SMD310
Abstract: No abstract text available
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200~400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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GESD1060
Abstract: No abstract text available
Text: ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,
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GESD1060
GESD1060
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GI1060
Abstract: GIJ1060
Text: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,
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GI1060
GIJ1060
O-251
GI1060
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE sat NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A
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EN686K
2SD1060
O-220-3L
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2SC4130
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base
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2SC4130
O-220F
O-220F)
2SC4130
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2SC3832
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1
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2SC3832
O-220C
2SC3832
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2TMA-4
Abstract: 2SA1826 2SC4730
Text: Ordering num ber: EN3878 2SA1826/2SC4730 SAMYO PNP/NPN Epitaxial Planar Silicon Transistors i 100V/3A Switching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatures
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OCR Scan
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EN3878
2SA1826/2SC4730
00V/3A
2SA1826
2SA1826/2SC4730
2TMA-4
2SA1826
2SC4730
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PDF
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C4730
Abstract: CQ 730 2SA1826 2SC4730 MR100-A
Text: Ordering number: EN3878 2SA1826/2SC4730 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications A pplications •Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatu re s ■Low collector-to-emitter saturation voltage.
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OCR Scan
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EN3878
2SA1826/2SC4730
00V/3A
2SA1826
C4730
CQ 730
2SA1826
2SC4730
MR100-A
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PDF
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