GE TO220 TRANSISTORS Search Results

GE TO220 TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

GE TO220 TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUX79 Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801 Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15	Original	2SD1017 2N6211 MJ3026 2SC1031 D44T3 D44T4 MJ3585 MJ4240 BUX79 SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801	PDF
MJE1100 Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70	Original	MJ4200 MJ4000 MJD6039 MJD6039-1 2SD1520 2SD1414 2SD1933 MJE1100 MJ4001 SDN201 BD263B Motorola transistors MJE1102	PDF
2SB553Y Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15	Original	2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553	PDF
BUY46 Abstract: 2SB657 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189 Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE0 on PD Max toN Max (A) (s) ICBO Max hFE fT ON) Min (Hz) r (CE)ut Toper Max (Ohms) Max (°C) 555m 555m 300n 140 140 140 140 140 300n 01u 140 J 140 J TO-220AB TO-220AB TO-220	Original	2N5295 2N5296 BDY83 2SB566K 2SB657 2SB858 2SD1133 2SD476K 2SC3473 BUY46 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189	PDF
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj	PDF
diode 2U 66 Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)	Original	2N3741 2N3741A BDT30B SSP58B SSP60B TIP30B 2N4920 2N4923 2SB954A diode 2U 66 STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U STH506 2N3741 MOTOROLA 2sc2317	PDF
KT819B Abstract: KT818A BD347 MJE1660 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type "c Max fT t0N Max hFE 'CBO r V BR CEO Max Max (A) Of) ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)eat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15	Original	MJE1290 MJE1660 SDT9801 KT818A KT819A 2SB757-09 KT819B BD347 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757	PDF
BD561 Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223	Original	MRF222 MRF223 MRF238 2N6083 SD1272 BD162 2SD810 PT9795 BD561 BD585 PT9788A 8D434 BDX24 BD186 motorola MJE2480 BD163 BD272	PDF
2SD556 sanken Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15	Original	BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7	PDF
SGS-Ates Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .	Original	SDM3203 SDM3201 SDM3204 SGS125 TIP125 TIP625 MJE1090 SGS-Ates sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125	PDF
2SD1039 Abstract: to-53 BUW64A Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220	Original	2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A	PDF
BU409D Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .	Original	BU407H BU409D BU409 BU407 BUY87 2SC3591 2SC3175 2SC3176 BUY18S rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104	PDF
2SD568L Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754	Original	2SA1185 2SB827 2SD1063 2SB754 2SD844 ET1551 2SB1224 2SD1626 2SA1442 2SC3692 2SD568L idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K	PDF

2SB903 Abstract: 2SD1212 ge to220 transistors Text: Inchange Semiconductor Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed	Original	2SB903 O-220 2SD1212 O-220) 2SB903 2SD1212 ge to220 transistors	PDF
2SC1827 Abstract: 2SC1827 45Y 2SA769 4 PIN TO 220 IC Text: Inchange Semiconductor Product Specification 2SC1827 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA769 ・Collector current :IC=4A ・Collector dissipation :PC=30W@TC=25℃ APPLICATIONS ・For use in low frequency power	Original	2SC1827 O-220 2SA769 O-220) 2SC1827 2SC1827 45Y 2SA769 4 PIN TO 220 IC	PDF
2SC1505 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC1505 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz Min APPLICATIONS ・For use in line-operated color TV chroma output circuits and sound output circuits.	Original	2SC1505 O-220 40MHz O-220) 2SC1505	PDF
2SC1507 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC1507 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz Min APPLICATIONS ・For color TV chroma output applications PINNING	Original	2SC1507 O-220 40MHz O-220) 2SC1507	PDF
2SB1369 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High collector power dissipation ・High current capability APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1	Original	2SB1369 O-220 O-220) 2SB1369	PDF
2SD234 equivalent Abstract: 2SD234 2SB434 Text: Inchange Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD234 APPLICATIONS ・For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter	Original	2SB434 O-220 2SD234 O-220) 2SD234 equivalent 2SD234 2SB434	PDF
BD607 Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)	Original	BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07	PDF
6414a Abstract: FGP7N60RUFD FGP7N60RUFDTU Text: FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features Applications • High speed switching Motor controls and general purpose inverters. • Low saturation voltage : VCE sat = 1.95 V @ IC = 7A Description • High input impedance Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides	Original	FGP7N60RUFD O-220 FGP7N60RUFD 6414a FGP7N60RUFDTU	PDF
SGP20N60RUF Abstract: No abstract text available Text: SGP20N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,	Original	SGP20N60RUF O-220 SGP20N60RUF SGP20N60RUFTU O-220	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF

Privacy Settings

GE TO220 TRANSISTORS Search Results

GE TO220 TRANSISTORS Result Highlights (5)

GE TO220 TRANSISTORS Datasheets Context Search

BUX79

MJE1100

2SB553Y

BUY46

1002ds

1002ds

diode 2U 66

KT819B

BD561

2SD556 sanken

SGS-Ates

2SD1039

BU409D

2SD568L

2SB903

2SC1827

2SC1505

2SC1507

2SB1369

2SD234 equivalent

BD607

6414a

SGP20N60RUF

aeg diode Si 61 L