GE NPN Search Results

ERN 1387

Abstract: heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S VAT200 U20X0K7S ACRP10A2H U20N0K4S
Contextual Info: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical

70U15

Abstract: ge company 2N1311 ge npn
Contextual Info: 2N1311 Ge NPN Lo-Pwr BJT 9.21 Transistors Transistors Bipolar Ge NPN Low-Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N1311 Online Store 2N1311 Diodes Ge N PN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

ld photocoupler

Abstract: KB826 KB826A KB826B KB826L M05A GE photocoupler
Contextual Info: PHOTOCOUPLER KB826 GE NERAL PURPOSE HIG H ISOLATIO N VOLTA GE SING LE TRANSISTOR TYPE HIG H COLLECTOR VOLTA GE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso= 5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

2N326

Abstract: 35 A 35 V BJT
Contextual Info: 2N326 Ge NPN Power BJT 9.88 Transistors Transistors Bipolar Ge NP. 1 of 1 Home Part Number: 2N326 Online Store 2N326 Diodes G e NPN Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N356

Contextual Info: 2N356 Ge NPN Lo-Pwr BJT 18.21 Transistors Transistors Bipolar Ge N. 1 of 1 Home Part Number: 2N356 Online Store 2N356 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2426

Abstract: TRANSISTORS BJT list 40N25A 2N242
Contextual Info: 2N2426 Ge NPN Lo-Pwr BJT 7.00 Transistors Transistors Bipolar Ge N. 1 of 2 Home Part Number: 2N2426 Online Store 2N2426 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Bjt 547

Abstract: OF BJT 547 2N585
Contextual Info: 2N585 Ge NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Ge NP. 1 of 2 Home Part Number: 2N585 Online Store 2N585 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

germanium transistors NPN

Abstract: 2N1306 germanium NPN
Contextual Info: 2N1306 Ge NPN Lo-Pwr BJT 7.63 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1306 Online Store 2N1306 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2n1304

Abstract: Low-Power Germanium NPN
Contextual Info: 2N1304 Ge NPN Lo-Pwr BJT 2.90 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1304 Online Store 2N1304 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

PA12-GF30

Abstract: BC10-S30-VP4X-H1141 66-GF25-V0 44-T2 BC10-S30-AZ3X-B3131 BC10-S30-VN4X-H1141 BC10-S30-VN4X
Contextual Info: Housing Style Part Number 30 mm - Embeddable, eurofast Connector BC10-S30-VN4X-H1141 ID Number M2506010 Features Comp. Outputs Em b Ran eddab l ge m e m No ne Ran mbe ge d. (m m) Capacitive Sensors - Barrels Output 10 15 4-Wire DC NPN BC10-S30-VP4X-H1141

transistor C 639 W

Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :

BC20-K40SR-VP4X2

Abstract: 2wire BC20-K40SR-FZ3X2 4wire BC20-K40SR-VN4X2 BC20-K40SR-VN4X2 TURCK m16x1.5 M2502128 BC15-K34SR-FZ3X2 BC15-K34SR-VN4X2
Contextual Info: Housing Style 34 mm - Embeddable, Terminal Chamber Part Number BC15-K34SR-VN4X2 ID Number M2502128 Features Comp. Outputs Em b Ran eddab l ge m e m No ne Ran mbe ge d. (m m) TURCK Level Sensors - Capacitive Output 15 23 4-Wire DC NPN BC15-K34SR-VP4X2 M2502129

2SD2105

Contextual Info: HITACHI 2SD2105— -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25ÛC Item S ym bol Rating Unit C o lle cto r to base volta ge V CB0 120 V C o lle cto r to em itter voltage VCE0 120 V E m itter to base volta ge

b1052

Abstract: BCF10-S30-VN4X BCC10-S30-AP4X ABS GF30 turck 1-800-544-7769 PVDF M2503037 BC10-S30-Y1X Pa 6.6 gf30 BC10-S30-VN4X
Contextual Info: Housing Style 30 mm - Embeddable, Potted-In Cable Part Number ID BCC10-S30-AP4X Features M2503037 Low Dielectric Targets Em b Ran eddab ge l mm e No ne Ran mbe ge d. (mm ) TURCK Level Sensors - Capacitive Output 10 3-Wire DC PNP BC10-S30-VN4X M2506000 Comp. Outputs

ge-2 transistor

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge

SFT42

Abstract: C0076
Contextual Info: SOLI» STATE DEVICES INC . IS E D |ö3t,bDll DDGEIME 5 | T -2.7 -O I . Ge om et ry Popula r Part Numbers IP mA X RAD(SI)/ sec.Gamma VR* (Volts) Size»* (Inches) RAD* * * tested R EC TI FI ER S , R A D I A T I O N D E T E C T O R S ROOXF Ge om e t r y

SC88 SOT363 plastic package Ht0 MARKING CODE

Abstract: marking Ht0 sot363 HT0 SOT363 MARKING 5F SOT363 PUMH10 marking 301
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD128 PUMH10 NPN resistor-equipped transistors Product specification 2000 Aug 01 Philips Semiconductors Product specification NPN resistor-equipped transistors PUMH10 FEATURES • Transistors with built-in bias resistors R1 and R2

uts 7805

Abstract: 7805 voltage regulator IC function
Contextual Info: 19-0001; Rev 2; 8/97 M ic roproc e ssor Volt a ge M onit or w it h Dua l Ove r/U nde rvolt a ge De t e c t ion The ICL7665 warns microprocessors µPs of overvoltage and undervoltage conditions. It draws a typical operating current of only 3µA. The trip points and hysteresis of the two voltage detectors are individually programmed via external resistors to any voltage greater

BF820W

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES PINNING • Low current max. 50 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W PINNING FEATURES • Low current max. 50 mA PIN

GKD transistor

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)

transistor tip 30c

Abstract: tip 30c equivalent TIP 29b tip 30c tip 30c transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B Com plem entary Silicon Plastic Power Transistors TIP29C PNP . . . designed for use in ge nera l purpose a m plifier and s w itching ap plication s. Compact T O -220 AB package. TIP30B MAXIMUM RATINGS TIP30C

"to-98" package

Abstract: 2N5172
Contextual Info: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a