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    W25R128FV

    Abstract: W25Q128JV W25R128F W25Q128FV W25Q128F USON-8 W25Q80DL W978H6KB W25Q80BVSSIG
    Text: 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond Electronics Corporation is a worldwide leading supplier of specialty memory IC’s. The company provides memory solution backed by the expert capabilities of design, manufacturing


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    K4W2G1646E-BC11

    Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
    Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W2G1646E 96FBGA K4W2G1646E-BC11 K4W2G1646E-BC1A k4w2g1646 K4W2G1646E

    K4W1G1646E

    Abstract: K4W1G1646E-HC11
    Text: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W1G1646E K4W1G1646E K4W1G1646E-HC11

    MT41J256M16HA

    Abstract: MT41J256M16 MT41J256M16HA-093 MT41J256M16H MT41J256M16HA-093G d9pzm
    Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16


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    PDF MT41J256M16 09005aef84c564b5 MT41J256M16HA MT41J256M16 MT41J256M16HA-093 MT41J256M16H MT41J256M16HA-093G d9pzm

    k4B2G1646

    Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
    Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


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    K4W1G1646G-BC11

    Abstract: K4W1G1646G-BC12 470 AP 02
    Text: Rev. 1.0, Nov. 2010 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W1G1646G K4W1G1646G-BC11 K4W1G1646G-BC12 470 AP 02

    K4W1G1646G-BC11

    Abstract: gDDR3-1333 K4W1G1646G-BC1A
    Text: Rev. 1.1, Jan. 2011 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W1G1646G K4W1G1646G-BC11 gDDR3-1333 K4W1G1646G-BC1A

    pcie Designs guide

    Abstract: VCQFX3700-PCIE-PB dvi dual link displayport VCQ290NVS-PCIEX1-PB VCQ290NVS-PCIEX16-PB VCQ420NVS-X16-DP-PB VCQFX3800-PCIE-PB gddr3 nvidia quadro fx FX3700
    Text: NVIDIA Quadro® FX 380 Low Profile by PNY Technologies® Big Performance on a Small Budget Designed for desktop and small form factor systems, the NVIDIA Quadro FX 380 LP by PNY professional graphics board meets stringent performance and reliability requirements, is ideal for 2D professional business applications


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    PDF GDDR32 512MB 256MB DMS-59 pcie Designs guide VCQFX3700-PCIE-PB dvi dual link displayport VCQ290NVS-PCIEX1-PB VCQ290NVS-PCIEX16-PB VCQ420NVS-X16-DP-PB VCQFX3800-PCIE-PB gddr3 nvidia quadro fx FX3700

    MT41J256M16

    Abstract: MT41J256M16HA MT41J256M16HA-093 MT41J256M16HA-093G MT41J256M16H d9pzm
    Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. E • Timing – cycle time


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    PDF MT41J256M16 64mBox 09005aef84c564b5 MT41J256M16 MT41J256M16HA MT41J256M16HA-093 MT41J256M16HA-093G MT41J256M16H d9pzm

    K4W1G1646E-HC12

    Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
    Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT


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    PDF K4W1G1646E K4W1G1646E-HC12 K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000

    d9pr

    Abstract: MT41J128M16JT
    Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • Multipurpose register • Output driver calibration • VDD = V DDQ = +1.5V 1.425–1.575V • VDD = V DDQ = +1.35V (1.283–1.45V) capable at down


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    PDF MT41J128M16 09005aef84255871 d9pr MT41J128M16JT

    MT41J128M16HA

    Abstract: MT41J128M16JT MT41J128M16JT-125 MT41J128M16JT-107G D9PRS MT41J128M16HA-125g SMD MARKING code A6 MT41J128M16HA-107G MT41J128M16JT-093G MARKING CCK -SDRAM
    Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16


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    PDF MT41J128M16 09005aef84255871 MT41J128M16HA MT41J128M16JT MT41J128M16JT-125 MT41J128M16JT-107G D9PRS MT41J128M16HA-125g SMD MARKING code A6 MT41J128M16HA-107G MT41J128M16JT-093G MARKING CCK -SDRAM

    D9PRS

    Abstract: MT41J128M16JT-125 MICRON gddr3 mt41j128m16ha MT41J128M16JT gddr3 GDDR3-1800 MT41J128M16HA-125 MT41J128M16HA-107G MT41J128M16JT-107G
    Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. D – 96-ball (8mm x 14mm) Rev. K


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    PDF MT41J128M16 64mBox 09005aef84255871 D9PRS MT41J128M16JT-125 MICRON gddr3 mt41j128m16ha MT41J128M16JT gddr3 GDDR3-1800 MT41J128M16HA-125 MT41J128M16HA-107G MT41J128M16JT-107G

    FBGA DDR3 x32

    Abstract: GDDR3 SDRAM 256Mb 144FBGA 144-FBGA gddr3 DDR266 DDR2-667 DDR2-800 DDR3-1333 DDR333
    Text: Jun.2010 Consumer DRAM Code Information Component K4XXXXXXXX - XXXXXXX 1 2 1. Memory K 2. DRAM : 4 3. Small Classification S : SDRAM H : DDR SDRAM T : DDR2 SDRAM B : DDR3 SDRAM D : GDDR J : GDDR3 4~5. Density & Refresh 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms


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    PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 667MHz DDR3-1600 FBGA DDR3 x32 GDDR3 SDRAM 256Mb 144FBGA 144-FBGA gddr3 DDR266 DDR2-667 DDR2-800 DDR3-1333 DDR333

    gDDR3-1800

    Abstract: MT41J128M16HA-125 gddr3
    Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16


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    PDF MT41J128M16 09005aef84255871 gDDR3-1800 MT41J128M16HA-125 gddr3

    MT41J256M16

    Abstract: MT41J128M16HA-125 MT41J128M16HA MT41J128M16HA-125g ddr3 4gb
    Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16


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    PDF MT41J256M16 09005aef84c564b5 MT41J256M16 MT41J128M16HA-125 MT41J128M16HA MT41J128M16HA-125g ddr3 4gb

    K4W1G1646E

    Abstract: samsung K4W1G1646E-HC11
    Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


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    PDF K4W1G1646E K4W1G1646E samsung K4W1G1646E-HC11

    K4W2G1646B-HC12

    Abstract: K4W2G1646B k4w2g1646 al 1411 K4W2G1646B-HC K4W2G1646B-HC15
    Text: Rev. 1.22, Apr. 2010 K4W2G1646B 2Gb B-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W2G1646B K4W2G1646B-HC12 K4W2G1646B k4w2g1646 al 1411 K4W2G1646B-HC K4W2G1646B-HC15

    K4W2G1646C

    Abstract: No abstract text available
    Text: Rev. 1.1, Sep. 2010 K4W2G1646C 2Gb gDDR3 SDRAM C-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W2G1646C 96FBGA K4W2G1646C

    d9pzm

    Abstract: MT41J256M16
    Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • VDD = V DDQ = +1.5V 1.425–1.575V • VDD = V DDQ = +1.35V (1.283–1.45V) capable at down clocked speeds


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    PDF MT41J256M16 09005aef84c564b5 d9pzm MT41J256M16