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Abracon Corporation AMPMGDD-37.5000 MEMS Crystal Oscillator 37.5MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGDD-37.5000)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGDD-37.5000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGDD-37.5000					1 - 10 - 100 - 1000 $1.49 10000 $1.34	Get Quote
Avnet Abacus	AMPMGDD-37.5000			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGDD-37.5000T3 MEMS Crystal Oscillator 37.5MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGDD-37.5000T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGDD-37.5000T3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGDD-37.5000T3					1 - 10 - 100 - 1000 - 10000 $1.28	Get Quote
Avnet Abacus	AMPMGDD-37.5000T3			113 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGDD-37.5000T MEMS Crystal Oscillator 37.5MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGDD-37.5000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGDD-37.5000T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGDD-37.5000T					1 - 10 - 100 - 1000 $1.41 10000 $1.34	Get Quote
Avnet Abacus	AMPMGDD-37.5000T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

GDD37 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ECG109 Abstract: FM/AM receiver ECG1003 ECG109 equivalent GDD3714 AM radio T-77-05-07 Text: PHILIPS E C bbSBTSa GDD3714 S 17E D G INC T-77-05-07 ECG1003 FM/AM IF AMP. semiconductors 5 4 R R n n fi ü ü ü i j à v s ii .280" ,2 4 0 " Low power consumption, high gain, excellent AGC characteristics. OSO" .040' \|a 11 9 3§ n n r Independent 4 Stage Amp.	OCR Scan	PDF	GDD3714 ECG1003 T-77-05-07 AM/1000 FM/83 ECG109 ECG109 FM/AM receiver ECG1003 ECG109 equivalent AM radio T-77-05-07
S6144 Abstract: MRON S6-144 Text: INTEGRATE] DEVICE 14E D • MÔSS771 00037äb A CMOS PARALLEL 64 X 5-BIT FIFO WITH FLAGS DESCRIPTION: FEATURES: • First-ln/Flrst-Out dual-port m em ory-45M H z • 64 x 5 organization • Low power consumption • — Active: 200mW typical) RAM-based Internal structure allows for fast fall-through time	OCR Scan	PDF	SS771 ory-45M 200mW IDT72413 25MHz 35MHz 128x5 MIL-STD-883, S6-144 S6144 MRON S6-144
Untitled Abstract: No abstract text available Text: EL7501C rfjtrrtg r EL7501C 1Q0VHigh Side Driver F e a tu r e s G en era l D e sc rip tio n • 100V H ig h Side V oltage T h e E L7501 p ro v id es a low c o st so lu tio n to m a n y h ig h side d riv e a p p lica tio n s. T h e E L7501 is D C cou p led so th e re a re n o	OCR Scan	PDF	EL7501C EL7501C L7501 DQ03777 EL7501Ã
Untitled Abstract: No abstract text available Text: 1N 5221 thru Corp. 1N 5281 DO-7 SC O T T SD A l /:. A / f o r more 7 r m fi< 2> • M l-M uil \ FEATURES SIL IC O N 500 mW Z EN E R D IO D E S • 2.4 THRU 200 VOLTS • COMPACT PACKAGE M A X IM U M R A T I N G S Operating and Storage Temperature: - 6 5 ° C to +200°C	OCR Scan	PDF	1N5221A, 1N5242A, 1N5243A, 1N5281A, 1N5221 1N5281 DO-35
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 13 D • 05DM33Ô 00037^ T ■ ALGR T-91-01 PROCESS NJ132 Process NJ132 N-Channel Junction Field-Effect Transistor Process NJ132 is an N-channel junction field-effect transistor designed primarily for high-speed switch ing applications, such as low O N resistance analog	OCR Scan	PDF	05DM33Ã T-91-01 NJ132 NJ132 GDD3770
Untitled Abstract: No abstract text available Text: H Y 6 2 V 8 1 0 0 A S e r ie s 128Kx8-blt CMOS SRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that	OCR Scan	PDF	128Kx8-blt HY62V8100A 55/70/85/100ns 100/120/150/200ns 1DD04-11-MAY94 GG3773 HY62V8100ALP
sk150da Abstract: SK150D Text: Öl3bt.71 0G0374fl 1Gb S1E » SEMIKRON SEMIKRON INC Maximum Ratings Conditions VcEVsus VcEV VcBO Vebo lc lc > CM I II If = II O o Ie = 0 D. C. tp = 1 ms -lc Ib Ptot Tvj Tease = 25 °C Tstg Visol Values Units 1000 V 1000 1000 7 150 300 150 8 1000 - 4 0 . . . + 150	OCR Scan	PDF	0G0374fl Q0P37S1 SK150DA100D sk150da SK150D
skp30a Abstract: osi 5k SKP18A skp40a Text: 5K P5.0 thru 5KP110A Microsemi Corp. SANTA ANA. i A S C O J T S D U .k .A / Kìi moie inloiindtion c.iil 602 -941-6300 - FEATURES Designed for use on the output of switching power supplies, voltage tolerances are referenced to the power supply output voltage level.	OCR Scan	PDF	5KP110A 1000/usec 5KP64 5KP64A SKP90 5KP90A SKP100 5KP100A 5KP110 skp30a osi 5k SKP18A skp40a
7961C Abstract: No abstract text available Text: I a M # a r HIGH PERFORMANCE AN AtflS INTEGRATED C « 6 ü lT S E L 7 9 6 1 C /E L 7 9 7 1 C /E L 7 9 8 1 C D U O l R l S l î l f J M Û fffs D c l d j f D V I V C V • F e a tu re s G en era l D e sc rip tio n • • • • • • • • The EL7961/EL7971/EL7981 provides 1.0A peak current for	OCR Scan	PDF	EL7961/EL7971/EL7981 7961C
mhs 80C32 Abstract: 80C32-N 80C52-N MHS80C32 MHS 80c52 80c52p Text: DATA SHEET 8 0 C 3 2 u /8 0 C 5 2 u HIGH SPEED 0 TO 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C32\|i/80C52ji-30 : 80C32^/80C52\|i-36 : 80C32\|i/80C52\|i-40 : 80C32ji/80C52n-42: 80C32(i : ROMLESS VERSION OF THE 80C52\|i 80C32\|j/80C52\|i-L : LOW POWER VERSION 2.7 V < Vcc < 5.5 V ; 0 < Fhz < 16 MHz	OCR Scan	PDF	80C32 80C52 j/80C52 80C32n 0C52n-S i/80C52ji-30 mhs 80C32 80C32-N 80C52-N MHS80C32 MHS 80c52 80c52p
11E4360BB-70 Abstract: 11D8360B 11D4360BC-70J Text: IBM11D4360B IBM11E4360B IBM11D8360B IBM11E8360B 4M/8M x 36 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: High Performance CMOS process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CMOS	OCR Scan	PDF	IBM11D4360B IBM11E4360B IBM11D8360B IBM11E8360B 72-Pin 1130n IBM11E8360B IBM11E4360B 11E4360BB-70 11D8360B 11D4360BC-70J
10N90 Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90 Text: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20	OCR Scan	PDF	O-247 10N90 12N90 O-204 O-247 00D37Ã U3350 D-68623 IXTH10N90 IXTH12N90 IXTM10N90