A778
Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
A778
A778 transistor
a784
Q62702-A779
Q62702-A778
A779
Q62702-A109
Q62702-A784
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PDF
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SOT89 marking GA
Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Text: BAW78A.BAW78D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89
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BAW78A.
BAW78D
VPS05162
EHA07007
BAW78A
BAW78B
BAW78C
EHB00095
EHB00096
SOT89 marking GA
BAW78B
SOT89 marking GD
BAW78C
BAW78D
Diode Marking C.3
diode 78a
BAW78A
BAW78
VPS05162
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PDF
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MDIO clause 45 specification
Abstract: SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410 10GBASE-LR
Text: TS-S06D317B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4102LR-GC-M 10GBASE-LR, 1310nm DFB, PIN-PD Features 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ¾ 1310nm DFB laser for up to 10km over single
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TS-S06D317B
10Gb/s
SDX4102LR-GC-M
10GBASE-LR,
1310nm
IEEE802
10GBASE-LR
MDIO clause 45 specification
SDX4102LR
10Gbe
SDX4101
X2 SDX4102LR
10G APD 1310nm
10Gig
SDX4102LR-GC-M
SK410
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PDF
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80-B4
Abstract: TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D
Text: TS-S07D087B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4101LM-GC-M 10GBASE-LRM, 1310nm FP-LD, PIN-PD Features 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ¾ 1310nm FP laser ¾
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TS-S07D087B
10Gb/s
SDX4101LM-GC-M
10GBASE-LRM,
1310nm
IEEE802
10GBASE-LRM
SDX4101LM
80-B4
TS-S07D087B
800B
807E
SDX4101
806-D
8098 PID
80-4B
807D
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PDF
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ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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PDF
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SMD diode DB3
Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required
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12-Bit
AD7545
12-Bit
20-Lead
20-Terminal
AD7545
P-20A
SMD diode DB3
SMD diode N20
SMD diode DB6
8c 617 transistor
AD7545JN
AD7545KN
AD7545SQ
AD7545TQ
DB10
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PDF
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diode SR 34
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UCD7138 SLVSCS1B – MARCH 2015 – REVISED MAY 2015 UCD7138 4-A and 6-A Single-Channel Synchronous-Rectifier Driver With Body-Diode Conduction Sensing and Reporting 1 Features
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UCD7138
UCD7138
UCD3138A
diode SR 34
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PDF
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3550C
Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)
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CE/2005/52487A
CE/2005/15132)
CE/2005/52487)
00hromium
3050B
3550C
5KP Series
3Kp Transistor
tvs cr
3050B
r-6 package
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PDF
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3050B
Abstract: No abstract text available
Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52500B RoHS Compliance Product Type: Part Number Series: TVS Diodes & Thyristor SMB package type P6SMBJ series & WPSCDS series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3:
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CE/2005/52500B
CE/2005/21379)
CE/2005/52500)
3050B
3050B
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PDF
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LTC5592
Abstract: marking c5a 8 pins LTC5593 LTC5590 LTC5591
Text: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz
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LTC5593
2500MHz
600MHz
14-Bit,
125Msps
16-Bit,
LTC5592
marking c5a 8 pins
LTC5593
LTC5590
LTC5591
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PDF
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LTC5593
Abstract: 2595MHz LTC5590 LTC5591 LTC5592 LTC5593IUH N4000-13 marking G85
Text: Electrical Specifications Subject to Change LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2550MHz IIP3: 27.8dBm at 2550MHz Noise Figure: 9.5dB at 2550MHz 15.9dB NF Under 5dBm Blocking
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LTC5593
2550MHz
800mW
600MHz
27dBm
900MHz,
95GHz,
LTC5593
2595MHz
LTC5590
LTC5591
LTC5592
LTC5593IUH
N4000-13
marking G85
|
PDF
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2595MHz
Abstract: LTC5592 ADC 30Ghz LTC5593 LTC5590 LTC5591
Text: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz
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LTC5593
600MHz
26dBm
790mW
185mW/Channel
740mW
5593f
2595MHz
LTC5592
ADC 30Ghz
LTC5590
LTC5591
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PDF
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LTC5551
Abstract: LTC6946
Text: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs
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LTC5551
300MHz
36dBm
18dBm
670mW
16-Lead
LTC5551
200MHz
LTC6946
|
PDF
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LTC5551
Abstract: LTC5585 LTC6946
Text: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs
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LTC5551
300MHz
36dBm
18dBm
670mW
16-Lead
LTC5551
200MHz
LTC5585
LTC6946
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PDF
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EUDYNA
Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Text: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO
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ES/FMM5117YE
FMM5117YE
EUDYNA
ka-band mixer
fmm5117
A114 es
JESD22-A114-C
RO4003
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PDF
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ka-band mixer
Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Text: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO
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ES/FMM5116YE
FMM5116YE
ka-band mixer
A114 es
JESD22-A114-C
RO4003
Ka-band
|
PDF
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AAT4681IDE-T1
Abstract: SMPS circuit for charging 6v battery AAT4681IDE AAT4681 AAT4681IDE-1-T1 12v 50 A battery charger smps schematic 10L5 AAT4681-1 circuit SCHEMATIC DIAGRAM SMPS 12v 5A AAT4681-2
Text: PRODUCT DATASHEET AAT4681 SmartSwitchTM 20mΩ P-Ch SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery
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AAT4681
AAT4681
TDFN-10L
AAT4681IDE-T1
SMPS circuit for charging 6v battery
AAT4681IDE
AAT4681IDE-1-T1
12v 50 A battery charger smps schematic
10L5
AAT4681-1
circuit SCHEMATIC DIAGRAM SMPS 12v 5A
AAT4681-2
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PDF
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pin function of ic an 5522
Abstract: ltc5534 AN 5522 GRP1555C1H101J LT5522EUF GRP155R71C103K LMK316BJ475ML LT5522 LTC1748 ssb demodulator ic
Text: LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer U FEATURES DESCRIPTIO • The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed
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LT5522
400MHz
25dBm
900MHz
1900MHz
280mW
LT5528
159dBm/Hz
66dBc
LTC5532
pin function of ic an 5522
ltc5534
AN 5522
GRP1555C1H101J
LT5522EUF
GRP155R71C103K
LMK316BJ475ML
LT5522
LTC1748
ssb demodulator ic
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AAT4681 20mΩ P-Channel SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery
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AAT4681
AAT4681
AAT4681/-1
02246A
|
PDF
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LTE Receiver
Abstract: LTC5592 RIF 206 1090Mhz LNA LTC5590 LTC5591 LTC5593 LTC5569 g40220 LTC5592IUH
Text: Electrical Specifications Subject to Change LTC5592 Dual 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.3dB at 2.35GHz IIP3: 27.3dBm at 2.35GHz Noise Figure: 9.8dB at 2.35GHz 16.4dB NF Under 5dBm Blocking
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LTC5592
35GHz
800mW
600MHz
27dBm
900MHz,
95GHz,
14GHz,
LTE Receiver
LTC5592
RIF 206
1090Mhz LNA
LTC5590
LTC5591
LTC5593
LTC5569
g40220
LTC5592IUH
|
PDF
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LTC5569
Abstract: LT5554 LT5579 LTC5593 LTC5590 LT5578 LTC5583 LT5557 LTC5592
Text: LTC5590 Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.7dB at 900MHz IIP3: 26dBm at 900MHz Noise Figure: 9.7dB at 900MHz 15.6dB NF Under 5dBm Blocking High Input P1dB 53dB Channel Isolation at 900MHz
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LTC5590
600MHz
900MHz
26dBm
14GHz,
LTC5569
LT5554
LT5579
LTC5593
LTC5590
LT5578
LTC5583
LT5557
LTC5592
|
PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
EHA07W
rps300
flS35fciGS
235bD5
D1HD43H
|
PDF
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MARKING GA
Abstract: Q62702-A779 Q62702-A778
Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
|
Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
WA07007
MARKING GA
|
PDF
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1N21B diode
Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.
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OCR Scan
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MIL-S-19500/339
1N358A,
1N358AR,
1N358AM,
IN358AMR
1N358A
1N358AR
1N358AM
1N358AMR
MIL-S-19500.
1N21B diode
1N21* Diode Detector Holder
1N28 diode
1N21B
1N23CR diode
1N358A
1N358AMR
1N358AR
1N358AM
1N53 ON
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PDF
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