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    GC PIN DIODE Search Results

    GC PIN DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GC PIN DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A778

    Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
    Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    Original     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 A778 A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784

    SOT89 marking GA

    Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
    Text: BAW78A.BAW78D Silicon Switching Diodes 1  Switching applications 2  High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89


    Original     		PDF BAW78A. BAW78D VPS05162 EHA07007 BAW78A BAW78B BAW78C EHB00095 EHB00096 SOT89 marking GA BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162

    MDIO clause 45 specification

    Abstract: SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410 10GBASE-LR
    Text: TS-S06D317B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4102LR-GC-M 10GBASE-LR, 1310nm DFB, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ¾ 1310nm DFB laser for up to 10km over single


    Original     		PDF TS-S06D317B 10Gb/s SDX4102LR-GC-M 10GBASE-LR, 1310nm IEEE802 10GBASE-LR MDIO clause 45 specification SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410

    80-B4

    Abstract: TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D
    Text: TS-S07D087B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4101LM-GC-M 10GBASE-LRM, 1310nm FP-LD, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ‹ ‹ ‹ ‹ ¾ 1310nm FP laser ¾


    Original     		PDF TS-S07D087B 10Gb/s SDX4101LM-GC-M 10GBASE-LRM, 1310nm IEEE802 10GBASE-LRM SDX4101LM 80-B4 TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D

    ga sot-89

    Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
    Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C


    Original     		PDF VPS05162 EHA07007 OT-89 EHB00094 EHB00095 EHB00096 EHB00097 ga sot-89 SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b

    SMD diode DB3

    Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
    Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required


    Original     		PDF 12-Bit AD7545 12-Bit 20-Lead 20-Terminal AD7545 P-20A SMD diode DB3 SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10

    diode SR 34

    Abstract: No abstract text available
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UCD7138 SLVSCS1B – MARCH 2015 – REVISED MAY 2015 UCD7138 4-A and 6-A Single-Channel Synchronous-Rectifier Driver With Body-Diode Conduction Sensing and Reporting 1 Features


    Original     		PDF UCD7138 UCD7138 UCD3138A diode SR 34

    3550C

    Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
    Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)


    Original     		PDF CE/2005/52487A CE/2005/15132) CE/2005/52487) 00hromium 3050B 3550C 5KP Series 3Kp Transistor tvs cr 3050B r-6 package

    3050B

    Abstract: No abstract text available
    Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52500B RoHS Compliance Product Type: Part Number Series: TVS Diodes & Thyristor SMB package type P6SMBJ series & WPSCDS series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3:


    Original     		PDF CE/2005/52500B CE/2005/21379) CE/2005/52500) 3050B 3050B

    LTC5592

    Abstract: marking c5a 8 pins LTC5593 LTC5590 LTC5591
    Text: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz


    Original     		PDF LTC5593 2500MHz 600MHz 14-Bit, 125Msps 16-Bit, LTC5592 marking c5a 8 pins LTC5593 LTC5590 LTC5591

    LTC5593

    Abstract: 2595MHz LTC5590 LTC5591 LTC5592 LTC5593IUH N4000-13 marking G85
    Text: Electrical Specifications Subject to Change LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2550MHz IIP3: 27.8dBm at 2550MHz Noise Figure: 9.5dB at 2550MHz 15.9dB NF Under 5dBm Blocking


    Original     		PDF LTC5593 2550MHz 800mW 600MHz 27dBm 900MHz, 95GHz, LTC5593 2595MHz LTC5590 LTC5591 LTC5592 LTC5593IUH N4000-13 marking G85

    2595MHz

    Abstract: LTC5592 ADC 30Ghz LTC5593 LTC5590 LTC5591
    Text: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz


    Original     		PDF LTC5593 600MHz 26dBm 790mW 185mW/Channel 740mW 5593f 2595MHz LTC5592 ADC 30Ghz LTC5590 LTC5591

    LTC5551

    Abstract: LTC6946
    Text: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs


    Original     		PDF LTC5551 300MHz 36dBm 18dBm 670mW 16-Lead LTC5551 200MHz LTC6946

    LTC5551

    Abstract: LTC5585 LTC6946
    Text: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs


    Original     		PDF LTC5551 300MHz 36dBm 18dBm 670mW 16-Lead LTC5551 200MHz LTC5585 LTC6946

    EUDYNA

    Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
    Text: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO


    Original     		PDF ES/FMM5117YE FMM5117YE EUDYNA ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003

    ka-band mixer

    Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
    Text: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO


    Original     		PDF ES/FMM5116YE FMM5116YE ka-band mixer A114 es JESD22-A114-C RO4003 Ka-band

    AAT4681IDE-T1

    Abstract: SMPS circuit for charging 6v battery AAT4681IDE AAT4681 AAT4681IDE-1-T1 12v 50 A battery charger smps schematic 10L5 AAT4681-1 circuit SCHEMATIC DIAGRAM SMPS 12v 5A AAT4681-2
    Text: PRODUCT DATASHEET AAT4681 SmartSwitchTM 20mΩ P-Ch SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery


    Original     		PDF AAT4681 AAT4681 TDFN-10L AAT4681IDE-T1 SMPS circuit for charging 6v battery AAT4681IDE AAT4681IDE-1-T1 12v 50 A battery charger smps schematic 10L5 AAT4681-1 circuit SCHEMATIC DIAGRAM SMPS 12v 5A AAT4681-2

    pin function of ic an 5522

    Abstract: ltc5534 AN 5522 GRP1555C1H101J LT5522EUF GRP155R71C103K LMK316BJ475ML LT5522 LTC1748 ssb demodulator ic
    Text: LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer U FEATURES DESCRIPTIO • The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed


    Original     		PDF LT5522 400MHz 25dBm 900MHz 1900MHz 280mW LT5528 159dBm/Hz 66dBc LTC5532 pin function of ic an 5522 ltc5534 AN 5522 GRP1555C1H101J LT5522EUF GRP155R71C103K LMK316BJ475ML LT5522 LTC1748 ssb demodulator ic

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AAT4681 20mΩ P-Channel SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery


    Original     		PDF AAT4681 AAT4681 AAT4681/-1 02246A

    LTE Receiver

    Abstract: LTC5592 RIF 206 1090Mhz LNA LTC5590 LTC5591 LTC5593 LTC5569 g40220 LTC5592IUH
    Text: Electrical Specifications Subject to Change LTC5592 Dual 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.3dB at 2.35GHz IIP3: 27.3dBm at 2.35GHz Noise Figure: 9.8dB at 2.35GHz 16.4dB NF Under 5dBm Blocking


    Original     		PDF LTC5592 35GHz 800mW 600MHz 27dBm 900MHz, 95GHz, 14GHz, LTE Receiver LTC5592 RIF 206 1090Mhz LNA LTC5590 LTC5591 LTC5593 LTC5569 g40220 LTC5592IUH

    LTC5569

    Abstract: LT5554 LT5579 LTC5593 LTC5590 LT5578 LTC5583 LT5557 LTC5592
    Text: LTC5590 Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.7dB at 900MHz IIP3: 26dBm at 900MHz Noise Figure: 9.7dB at 900MHz 15.6dB NF Under 5dBm Blocking High Input P1dB 53dB Channel Isolation at 900MHz


    Original     		PDF LTC5590 600MHz 900MHz 26dBm 14GHz, LTC5569 LT5554 LT5579 LTC5593 LTC5590 LT5578 LTC5583 LT5557 LTC5592

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    OCR Scan     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 EHA07W rps300 flS35fciGS 235bD5 D1HD43H

    MARKING GA

    Abstract: Q62702-A779 Q62702-A778
    Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    OCR Scan     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 WA07007 MARKING GA

    1N21B diode

    Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
    Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.


    OCR Scan     		PDF MIL-S-19500/339 1N358A, 1N358AR, 1N358AM, IN358AMR 1N358A 1N358AR 1N358AM 1N358AMR MIL-S-19500. 1N21B diode 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON