Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
EHA07W
rps300
flS35fciGS
235bD5
D1HD43H
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PDF
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A778
Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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Original
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
A778
A778 transistor
a784
Q62702-A779
Q62702-A778
A779
Q62702-A109
Q62702-A784
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PDF
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SOT89 marking GA
Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Text: BAW78A.BAW78D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89
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Original
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BAW78A.
BAW78D
VPS05162
EHA07007
BAW78A
BAW78B
BAW78C
EHB00095
EHB00096
SOT89 marking GA
BAW78B
SOT89 marking GD
BAW78C
BAW78D
Diode Marking C.3
diode 78a
BAW78A
BAW78
VPS05162
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PDF
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MARKING GA
Abstract: Q62702-A779 Q62702-A778
Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
WA07007
MARKING GA
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PDF
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ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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Original
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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PDF
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nfi7
Abstract: marking A95 SC201 SC201-4 SC201-8
Text: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications
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OCR Scan
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SC201
SC20I-2
SC201-4
SC201-8
SC20K0
nfi7
marking A95
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PDF
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MARKING GA
Abstract: A779 baw78c
Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8
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OCR Scan
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62702-A675
62702-A677
62702-A779
62702-A109
MARKING GA
A779
baw78c
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PDF
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Untitled
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15
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Original
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MA111
MA733
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PDF
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MA707
Abstract: marking GC diode GC marking diode
Text: MA111 Schottky Barrier Diodes SBD MA707 Silicon epitaxial planer type For UHF mixer Unit : mm INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● Mini package, enabling down-sizing of the equipment and automatic
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Original
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MA111
MA707
MA707
marking GC diode
GC marking diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto
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OCR Scan
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MA2S707
890MHz,
935MHz,
45MHz
935MHz
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PDF
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schottky diode marking A7
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-
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Original
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2SK1606
MA2S707
schottky diode marking A7
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PDF
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103 capacitor
Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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Original
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MA2X707
103 capacitor
marking GC diode
ma2x707
935 schottky diode
gc capacitor
diode marking Gc
GC PIN DIODE
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PDF
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MA733
Abstract: diode marking Gc marking GC diode 103 capacitor
Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE 2 Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud
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Original
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MA111
MA733
MA733
diode marking Gc
marking GC diode
103 capacitor
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PDF
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MA733
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer M Di ain sc te on na tin nc ue e/ d 1 2 +0.1 1.7±0.1 0.4±0.15
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Original
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MA111
MA733
MA733
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PDF
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M2X diode
Abstract: marking N11 diode MA707
Text: MA111 Schottky Barrier Diodes SBD MA730 Silicon epitaxial planer type Unit : mm +0.2 For UHF mixer 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 Optimum for the UHF band mixer 1.45 ● +0.1 Small forward voltage VF 3 0.4 –0.05 ● 0.95 Large conversion gain (GC)
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Original
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MA111
MA730
MA707
O-236
935MHz
M2X diode
marking N11 diode
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PDF
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103 capacitor
Abstract: MA2X707 marking GC diode
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain
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Original
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MA2X707
103 capacitor
MA2X707
marking GC diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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Original
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MA2X707
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PDF
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1N21B diode
Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.
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OCR Scan
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MIL-S-19500/339
1N358A,
1N358AR,
1N358AM,
IN358AMR
1N358A
1N358AR
1N358AM
1N358AMR
MIL-S-19500.
1N21B diode
1N21* Diode Detector Holder
1N28 diode
1N21B
1N23CR diode
1N358A
1N358AMR
1N358AR
1N358AM
1N53 ON
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PDF
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M2X diode
Abstract: MA3X730
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature
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Original
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MA3X730
O-236
SC-59
M2X diode
MA3X730
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 + 0.05 Forward voltage Junction temperature Storage temperature + 0.05 Rating 0.15 ± 0.05 2 Unit ea s ht e v tp is :// it pa fo na llo so win ni g c. U
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Original
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MA2S707
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1
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Original
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MA3X730
MA2X707s
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PDF
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MA2S707
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 Symbol + 0.05 2 0.15 ± 0.05 1 0.6 ± 0.05 0.80 − 0.03 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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Original
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MA2S707
MA2S707
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PDF
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Untitled
Abstract: No abstract text available
Text: SC201 0.5A <§ FAST RECOVERY DIODE • O utline Drawing 121“ H Features Marking • Surface mount device • High voltage by mesa design • High reliability - CATHODE MARKING ■SYMBOL A-SYI I GA 14 j- H Applications • High speed switching
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OCR Scan
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SC201
SC201-2
SC201-4
SC201-6
DD03b47
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PDF
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GHM1540
Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
Text: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.
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Original
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C16E-3.
C16E3
DC250V-3
15kV/AC250V
C16E-3
GHM1000
GHM1500
AC250V
GHM2000
GHM1540
GHM3045
Iec384-14
GHM3145
GHM2145
223k x7r 50
cd 471k capacitor
GHM1040
GHM1545
iec384
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PDF
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