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    Apacer Technology Inc 78.01GC8.4020C

    DDR3-1333 ECC-DIMM 1GB CL9
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 78.01GC8.4020C Bulk 3 1
    • 1 $66.66
    • 10 $61.522
    • 100 $56.5421
    • 1000 $56.5421
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    Apacer Technology Inc 78.A2GC8.4000C

    MODULE DDR3 SDRAM 2GB 204SODIMM
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    Apacer Technology Inc 78.B2GC8.4010C

    MODULE DDR3 SDRAM 4GB 204SODIMM
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    Seiko Epson Corporation SG-8018CA 16.3840M-TJHSA0

    Standard Clock Oscillators SG-8018CA 16.3840M-TJHSA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C ST 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CA 16.3840M-TJHSA0 645
    • 1 $1.23
    • 10 $1.1
    • 100 $0.902
    • 1000 $0.712
    • 10000 $0.672
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    Seiko Epson Corporation SG-8018CG 84.0000M-TJHPA0

    Standard Clock Oscillators SG-8018CG 84.0000M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CG 84.0000M-TJHPA0
    • 1 $0.97
    • 10 $0.86
    • 100 $0.71
    • 1000 $0.56
    • 10000 $0.529
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    GC 840 Datasheets Context Search

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    PDF

    gc864

    Abstract: GC864-PY GC864-QUAD sim 300 gsm module sim 300 gsm gsm 07.05 of GSM sim 300 DTMF and emergency sms SIM holder M2M SIM
    Text: wireless solutions GSM | GPRS wireless solutions GC 864-QUAD Compact GC 864-PY Compact QUALITY INVESTMENT PROTECTION The new GC864 product family is one of the smallest GSM/GPRS quad-band ­modules with industrial connectors in the market. BUSINESS SCALABLE


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    864-QUAD 864-PY GC864 GC864-QUAD GC864-PY sim 300 gsm module sim 300 gsm gsm 07.05 of GSM sim 300 DTMF and emergency sms SIM holder M2M SIM PDF

    vistanet

    Abstract: PGC1000 ABB pressure regulator gas chromatograph abb PGC 2000 BUASC2-1-0607 ppm dew point solenoid valve pgc 2000 abb metal detector service manual gas solenoid valve
    Text: Data Sheet Process Gas Chromatograph PGC1000 Analyzer Products Field Mounted GC DESCRIPTION STANDARD FEATURES The PGC1000 is a field mounted GC using two analytical trains per analyzer that enable measurements of C1 thru C9+, inerts and H2S in various Hydrocarbon Processing Industry HPI streams.


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    PGC1000 PGC1000 BUASC2-1-0607 vistanet ABB pressure regulator gas chromatograph abb PGC 2000 BUASC2-1-0607 ppm dew point solenoid valve pgc 2000 abb metal detector service manual gas solenoid valve PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure


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    CXG1081TN CXG1081TN 15dBm 10-pin 800MHz 10PIN TSSOP-10P-L01 PDF

    10PIN

    Abstract: CXG1081TN
    Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure


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    CXG1081TN CXG1081TN 15dBm 10-pin 800MHz 10PIN TSSOP-10P-L01 PDF

    burndy Y35 Hypress owner manual

    Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
    Text: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec


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    GC-08 YGIBW28-613-2N YGIBW28-675-2N YGIBW34-338-2N YGIBW34-400-2N YGIBW34-462-2N YGIBW34-550-2N YGIBW34-613-2N YGIBW34-675-2N YGL29C2 burndy Y35 Hypress owner manual burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual PDF

    10PIN

    Abstract: CXG1081TN
    Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure


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    CXG1081TN CXG1081TN 15dBm 10-pin 800MHz TSSOP-10P-L01 10PIN PDF

    10PIN

    Abstract: CXG1111EN GC712 L-367
    Text: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)


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    CXG1111EN 800MHz CXG1111EN 10-pin 10PIN VSON-10P-01 GC712 L-367 PDF

    E-9843

    Abstract: IRF 740 N
    Text: SONY CXG 1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. Features • High conversion gain Gc = 9.5dB Typ. • Low noise figure NF = 4.9 to 5.2dB (Typ.)


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    CXG1050TN 1050TN 16-pin 800MHz CXG1050TN 16PIN TSSOP-16P-L01 E-9843 IRF 740 N PDF

    sony

    Abstract: 10PIN CXG1111EN vson-10p-01
    Text: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)


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    CXG1111EN 800MHz CXG1111EN 10-pin VSON-10P-01 sony 10PIN vson-10p-01 PDF

    BF772W

    Abstract: sot-23 CODE BF 550 SOT143 BF799W HF-transistoren
    Text: Transistoren Transistors Hochlinearer Abwärtsm ischer Ultralinear Down Converter Type CMY 200 Maximum Ratings Package Characteristics TA = 25 °C; VD - 5 V / rF = 1224 MH z , / lo = 1185 MHz.yip = 39 MHz, PLQ = 5 dBm Vä V Pm dBm /d Gc ^P3in mA dB dB 6


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    OT-323 OT-143 BF772W OT-343 OT-23 BF799W sot-23 CODE BF 550 SOT143 HF-transistoren PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


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    K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max PDF

    16PIN

    Abstract: CXG1050TN L7107
    Text: CXG1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5dB (Typ.) • Low noise figure NF = 4.9 to 5.2dB (Typ.)


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    CXG1050TN CXG1050TN 15dBm 16-pin 800MHz 16PIN TSSOP-16P-L01 L7107 PDF

    K4D26323RA-GC33

    Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
    Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.


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    K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D26323RA-GC2A 20tCK 15tCK 22tCK K4D26323RA-GC33 GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC36 PDF

    SOT323-6

    Abstract: BF772W
    Text: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB


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    BF772W BF775A OT-23 OT-23 OT-323 OT-323 OT-143 SOT323-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.


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    K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D26323RA-GC2A 20tCK 15tCK 22tCK PDF

    K4D26323RA-GC36

    Abstract: GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33
    Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.5 December 2001 Samsung Electronics reserves the right to change products or specification without notice.


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    K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D263238A-GC33/40/45/50/55/60 K4D26323RA-GC36 K4D263238A-GC2A K4D26323RA-GC2A GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CD 28L QL Series 4 000 - 10 000h at 105°C CD 269 PH • Miniaturized · Low Impedance, High Current · Switching Power Supply 125°C 85°C CD 110 PT smaller CD 287 GC CD 28L QL lower ESR lowest ESR longest life Radial CD 281 LL CD 284 XY Item Characteristics


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    120Hz) v2006 PDF

    m073

    Abstract: r 3589 C6403
    Text: 07/17/9S AMP FftX-> 07 :HI :58 mu ampia n i ZSl EE ü P»ac 00-4 07/ 17/9S 07 :-*2 :-46 AH I> Fftx > —• »>mb w HanciTiaw CM 54 W IWV PCT gC 0 7 3 0 -4 3 4 y g * -«1 f#-.073*.0»C POST TO WITHSTAND 13 NEWTONS 3183.; MIN. A X IA L PORCE in both directions shown without dislomins.


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    87/17X35 lllf-22( t-640399-9 I-640399-6 S40389-9 S40389-8 HTA-156 C-640389 m073 r 3589 C6403 PDF

    Untitled

    Abstract: No abstract text available
    Text: CD 263 BK Series 2000h a t 105°C CD 269 PH CD 11G GW S ta n d a rd 105*0 125*C longer life CD 110 PT CD 287 GC CD 261 LK 1 105”C lo w e r ESR Items C haracteristics O p e ra tin g Tem perature Range *C -40 - +105 -2 5 -+ 1 0 5 V o lta g e Range (V) 6.3 - 250


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    2000h 120Hz) 100kHz. 120Hz. 120Hz, 120Hz PDF

    CD 8403

    Abstract: ML840 Raytheon Company ML-8403
    Text: ML-8403 PAGE I IS S U E D 1 1-63 gÂCHLËg ML-8403 D ESCRIPTIO N AND RATINGS DESCRIPTION T h e M L - 8 4 0 3 is a r u g g e d iz e d , h ig h -m u p la n a r trio d e o f c ap a c ita n ce , h igh tran sco n d u ctan ce an d h igh m u, this tube ce ra m ic -a n d -m etal c o n stru ctio n , d e sig n e d fo r u se as a g rid -


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    ML-8403 ML-8403 CD 8403 ML840 Raytheon Company PDF

    16PIN

    Abstract: CXG1050TN
    Text: CXG1050TN Receiving Dual-Band Mixer For the availability of this product, please contact the sales office. Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features


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    CXG1050TN CXG1050TN 15dBm 16-pin 16PIN TSSOP-16P-L01 PDF

    L9150

    Abstract: 16PIN CXG1109EN
    Text: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


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    CXG1109EN CXG1109EN 16-pin 16PIN VSON-16P-01 L9150 PDF

    GP318

    Abstract: No abstract text available
    Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.)


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    CXG1082EN CXG1082EN 15dBm 16-pin 800MHz 16PIN VSON-16P-01 GP318 PDF

    16PIN

    Abstract: CXG1082EN GC1210 sony 330
    Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process.


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    CXG1082EN CXG1082EN 15dBm 16-pin 16PIN VSON-16P-01 GC1210 sony 330 PDF