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    Vishay Semiconductors VS-GB100DA60UP

    IGBT MOD 600V 125A 447W SOT227
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    VS-GB100DA60UP

    Abstract: No abstract text available
    Text: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original
    PDF VS-GB100DA60UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB100DA60UP

    GB100DA60UP

    Abstract: No abstract text available
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 E78996 2002/95/EC 11-Mar-11 GB100DA60UP

    GB100DA60UP

    Abstract: No abstract text available
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 E78996 2002/95/EC 11-Mar-11 GB100DA60UP

    GB100DA60UP

    Abstract: GB100D 930-01
    Text: GB100DA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 2002/95/EC 18-Jul-08 GB100DA60UP GB100D 930-01

    H9510

    Abstract: GB100DA60UP
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 2002/95/EC OT-227 18-Jul-08 H9510 GB100DA60UP

    GB100DA60UP

    Abstract: No abstract text available
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GB100DA60UP

    E78996 diode

    Abstract: GB100DA60UP
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original
    PDF GB100DA60UP OT-227 E78996 2002/95/EC 18-Jul-08 E78996 diode GB100DA60UP