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    GB05SHT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * * $Revision: 1.0 $Date: 05-SEP-2013


    Original     		PDF GB05SHT06-CAL GB05SHT06-CAL. 05-SEP-2013 GB05SHT06 99E-17 87E-05 38E-10 00E-10 GB05SHT06-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB05SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB05SHT06-CAL GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB05SHT06-CAL Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03