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    Untitled

    Abstract: No abstract text available
    Text: GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 100 V Schottky rectifier 225 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF GB02SHT01-46 Mil-PRF-19500 GB02SHT01 57E-18 40E-05 12E-11 00E-10 00E-03

    GB02SHT01-46 SPICE

    Abstract: No abstract text available
    Text: GB02SHT01-46 SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the GB02SHT01-46. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 29-AUG-2014 $ * * GeneSiC Semiconductor Inc. *


    Original     		PDF GB02SHT01-46 GB02SHT01-46. 29-AUG-2014 GB02SHT01-46 GB02SHT01ANODE GB02SHT01 57E-18 40E-05 GB02SHT01-46 SPICE