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    GATE-DRAIN ZENER Search Results

    GATE-DRAIN ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GATE-DRAIN ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice PDF

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor PDF

    SiC JFET

    Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
    Text: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY


    Original     		BIP05 SiC JFET ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features General Description ►► High voltage Vertical DMOS technology ►► Integrated drain output high voltage diodes ►► Integrated gate-to-source resistor


    Original     		TC7920 TC7920 12-Lead DSFP-TC7920 B080613 PDF

    0.18 um CMOS parameters

    Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
    Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors


    Original     		10-3/K] 0.18 um CMOS parameters poly silicon resistor pepi c 0.18 um CMOS technology World transistors PDF

    A121010

    Abstract: N mosfet 100v 500A
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor


    Original     		TC7920 TC7920 12-Lead DSFP-TC7920 A121010 A121010 N mosfet 100v 500A PDF

    P-MOSFET

    Abstract: TC7920 ir 222 125OC MD1822 C7920
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor


    Original     		TC7920 TC7920 12-Lead DSFP-TC7920 A121010 P-MOSFET ir 222 125OC MD1822 C7920 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor


    Original     		TC7920 TC7920 12-Lead DSFP-TC7920 A012411 PDF

    XM116

    Abstract: M116 M116 CALOGIC
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		-65oC 200oC -55oC 125oC 10sec) DS051 XM116 M116 M116 CALOGIC PDF

    M116

    Abstract: XM116 M116 CALOGIC
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		-65oC 200oC -55oC 125oC 10sec) M116 XM116 M116 CALOGIC PDF

    RF800

    Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
    Text: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS


    Original     		P-244 RF800 MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF

    AOT502

    Abstract: gate-drain zener 50E05 102-AX
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		AOT502 AOT502 gate-drain zener 50E05 102-AX PDF

    Untitled

    Abstract: No abstract text available
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		AOT502 AOT502 PDF

    gate to drain clamp

    Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		AOT500 AOT500 50E-06 00E-06 00E-05 300mW Fig16: gate to drain clamp 30A 44 zener diode gate-drain zener 8017M PDF

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		AOT500 AOT500 gate to drain clamp PDF

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		AOT500L AOT500 AOT500 gate to drain clamp PDF

    Untitled

    Abstract: No abstract text available
    Text: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8  Built-in protection zener diode  RoHS compliant device


    Original     		SMNY2Z30 04-JUL-11 KSD-T0A075-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)


    Original     		KTS1C1S250 PDF

    2Z30

    Abstract: smny2z30
    Text: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device


    Original     		SMNY2Z30 08-JUN-11 KSD-T0A075-000 2Z30 smny2z30 PDF

    TC9184AP

    Abstract: No abstract text available
    Text: TC74VHC03F/FN/FS TENTATIVE DATA QUAD 2 • INPUT NAND GATE OPEN DRAIN The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low


    OCR Scan     		TC74VHC03F/FN/FS TC74VHC03 TC74VHCOO. TC9184AP TA75558P, TC9184AP PDF

    injector MOSFET driver

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET MLP1N06CL Motorola Preferred Device These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain


    OCR Scan     		MLP1N06CL MLP1N06CL injector MOSFET driver PDF

    mosfet zener diode

    Abstract: No abstract text available
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low I gss • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e .30V


    OCR Scan     		100jiA 10fiA, mosfet zener diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier mm FEATURES ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low Ig s s • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e . 30V


    OCR Scan     		10jjA, PDF