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    GATE DRIVER TRANSFORMER Search Results

    GATE DRIVER TRANSFORMER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P404 Coilcraft Inc Designer's Kit, Base Gate Driver Transformers, RoHS Visit Coilcraft Inc
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    GATE DRIVER TRANSFORMER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SKCB

    Abstract: skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20
    Text: Modules – Explanations – SKiiP SKiiP gate driver designator D: gate driver Features DU: gate driver with DC-link voltage measurement and over voltage protection • SKiiP: SEMIKRON integrated intelligent Power is a power semiconductor subsystem • SKiiP integrates power semiconductor switches, heat


    Original     		th5000 2m2-45-2-12 2m2-45-3-12 2m2-45-4-12 3m3-45-2-12 3m3-45-3-12 3m3-45-4-12 4m7-40-2-12 4m7-40-3-12 4m7-40-4-12 SKCB skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60014FV-C General Description Key Specifications     The BM60014FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 120ns, and


    Original     		2500Vrms BM60014FV-C BM60014FV-C 2500Vrms, 120ns, 120ns PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input


    Original     		2500Vrms BM6104FV-C BM6104FV-C 2500Vrms, 150ns, 150ns SSOP-B20W PDF

    41a6

    Abstract: No abstract text available
    Text: Gate Driver Transformer<SMD Type: CGDT Series> Type: CGDT76 ◆ Product Description ・7.9x7.0mm Max. L×W , 6.3mm Max. Height ・Custom design is available. ◆ Feature ・500Vdc insulation between Gate and Driver. ・Basic insulation(1.4mm creepage/clearance) and operational available.


    Original     		CGDT76 500Vdc 50kHz 500Vdc/1min P05NZ-198 100kHz/0 500Vdc 41a6 PDF

    mlt 22

    Abstract: MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator HIP2030 IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor
    Text: Harris Semiconductor No. AN9408.2 Harris Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Harris Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,


    Original     		AN9408 HIP2030 HIP2030, HIP2030EVAL, DB307A. mlt 22 MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor PDF

    timonta if 140 pulse transformer

    Abstract: Timonta AG timonta pulse transformer timonta Timonta AG ch-6850 Pulse Transformer VAC timonta Timonta AG ch-6850 mendrisio timonta if Timonta AG if Pulse Transformer timonta
    Text: PSDM POWER STAGE DRIVER MODULE PSDM-0DN1-5040 POWER STAGE DRIVER MODULE: DC/DC CONVERTER FOR IGBT/MOSFET GATE DRIVER Technical Data Features Applications - Electrical isolation of 3500 VAC - Switching frequency 500 kHz - Output voltage monitoring - Overcurrent and short circuit protection


    Original     		PSDM-0DN1-5040 12VDC 140mA. PSDM-0DT25020 timonta if 140 pulse transformer Timonta AG timonta pulse transformer timonta Timonta AG ch-6850 Pulse Transformer VAC timonta Timonta AG ch-6850 mendrisio timonta if Timonta AG if Pulse Transformer timonta PDF

    Untitled

    Abstract: No abstract text available
    Text: LM5035 PWM Controller with Integrated Half-Bridge and SyncFET Drivers General Description Features The LM5035 Half-Bridge Controller/Gate Driver contains all of the features necessary to implement half-bridge topology power converters using voltage mode control with line voltage feed-forward. The floating high-side gate driver is capable of operating with supply voltages up to 105V. Both the


    Original     		LM5035 PDF

    ADuM3220

    Abstract: No abstract text available
    Text: 4 A Dual-Channel Gate Driver ADuM3220 FEATURES GENERAL DESCRIPTION 4 A peak output current Precise timing characteristics 60 ns maximum isolator and driver propagation delay 5 ns maximum channel-to-channel matching High junction temperature operation: 125°C


    Original     		ADuM3220 61000-4-x ADuM3220ARZ ADuM3220ARZ-RL7 12407-A ADuM3220 D08994-0-4/10 PDF

    MS-012-AA

    Abstract: ADuM3220
    Text: Isolated 4 A Dual-Channel Gate Driver ADuM3220/ADuM3221 FEATURES GENERAL DESCRIPTION 4 A peak output current Precise timing characteristics 60 ns maximum isolator and driver propagation delay 5 ns maximum channel-to-channel matching High junction temperature operation: 125°C


    Original     		ADuM3220/ADuM3221 ADuM3220A/ADuM3221A ADuM3220B/ADuM3221B ADuM3220 61000-4-x D08994-0-3/11 MS-012-AA ADuM3220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Isolated 4 A Dual-Channel Gate Driver ADuM3220/ADuM3221 FEATURES GENERAL DESCRIPTION 4 A peak output current Precise timing characteristics 60 ns maximum isolator and driver propagation delay 5 ns maximum channel-to-channel matching High junction temperature operation: 125°C


    Original     		ADuM3220/ADuM3221 ADuM3220A/ADuM3221A ADuM3220B/ADuM3221B ADuM3220 61000-4-x ADuM3220ARZ ADuM3220ARZ-RL7 ADuM3220BRZ ADuM3220BRZ-RL7 ADuM3221ARZ PDF

    TD350E

    Abstract: schematic diagram UPS active power 600 schematic diagram UPS 600 Power free desaturation design 3 phase MOSFET INVERTER motor schematic diagram UPS active power easy 400
    Text: TD350E Advanced IGBT/MOSFET driver Features • 1.5 A source/2.3 A sink typ gate drive ■ Active Miller clamp feature ■ Two steps turn-off with adjustable level and delay ■ Desaturation detection ■ Fault status output ■ Negative gate drive ability


    Original     		TD350E TD350E schematic diagram UPS active power 600 schematic diagram UPS 600 Power free desaturation design 3 phase MOSFET INVERTER motor schematic diagram UPS active power easy 400 PDF

    2451 mosfet

    Abstract: B105 CF35 G746 SC102 YG6260 3 phase MOSFET INVERTER motor
    Text: SMA6843MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply ▪ Built-in protection circuit for controlling power supply


    Original     		SMA6843MP 24-pin) SMA6843MP 2451 mosfet B105 CF35 G746 SC102 YG6260 3 phase MOSFET INVERTER motor PDF

    8 PIN RELAY 6V dc pla circuit diagram

    Abstract: No abstract text available
    Text: LinÇAB_ ¡ss Dual High Side TECHNOLOGY M icropow er MOSFET Driver F€flTUft€S D CSC RIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications.


    OCR Scan     		LTC1155 LTC1155 100Hz) 8 PIN RELAY 6V dc pla circuit diagram PDF

    Unitrode DN-57

    Abstract: UNITRODE product and applications handbook isolation gate drive transformer the calculation of the power dissipation for the IGBT ELECTRICAL CALCULATION FOR TRANSFORMER IGBT loss calculate Unitrode U-143C
    Text: DN-57 Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized for driving Insulated Gate Bipolar Transistors IGBTs , the UC3726N/UC3727N IGBT driver pair is a very versatile and cost effective solution for


    Original     		DN-57 UC3726N/UC3727N UC3726N UC3727N Unitrode DN-57 UNITRODE product and applications handbook isolation gate drive transformer the calculation of the power dissipation for the IGBT ELECTRICAL CALCULATION FOR TRANSFORMER IGBT loss calculate Unitrode U-143C PDF

    sma6821

    Abstract: SMA6820 B105 CF35 G746 SC102 SMA6820MP YG6260
    Text: SMA6821MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply


    Original     		SMA6821MP 24-pin) SMA6821MP sma6821 SMA6820 B105 CF35 G746 SC102 SMA6820MP YG6260 PDF

    IGBT loss calculate

    Abstract: No abstract text available
    Text: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver


    OCR Scan     		DN-57 UC3726N/UC3727N UC3726N UC3727N UC3726/UC3727 U-143C) U-143C. 15kHz UC3726N, IGBT loss calculate PDF

    sma6822

    Abstract: sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260
    Text: SMA6822MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply


    Original     		SMA6822MP 24-pin) SMA6822MP sma6822 sma6822m SMA6820 2451 mosfet B105 CF35 G746 SC102 SMA6820MP YG6260 PDF

    sma6823

    Abstract: SMA6823MP Leadform B105 CF35 G746 SC102 SMA6820MP YG6260 2451 mosfet
    Text: SMA6823MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply


    Original     		SMA6823MP 24-pin) SMA6823MP sma6823 Leadform B105 CF35 G746 SC102 SMA6820MP YG6260 2451 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP2030 HARRIS SEMICONDUCTOR 30V MCT/IGBT Gate Driver March 1995 Features Description • ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of


    OCR Scan     		HIP2030 HIP2030 200ns. 200ns 5M-1982. PDF

    F 2452 mosfet

    Abstract: SMA6800M SMA6861M sma6861 B105 CF35 G746 SC102 YG6260 2451 mosfet
    Text: SMA6861M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


    Original     		SMA6861M 24-pin) SMA6861M F 2452 mosfet SMA6800M sma6861 B105 CF35 G746 SC102 YG6260 2451 mosfet PDF

    SLA6868M

    Abstract: B105 CF35 G746 SC102 YG6260 high voltage 3-phase motor driver ic
    Text: SLA6868M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


    Original     		SLA6868M 24-pin) SLA6800M SLA6868M B105 CF35 G746 SC102 YG6260 high voltage 3-phase motor driver ic PDF

    F 2452 mosfet

    Abstract: SMA6862M B105 CF35 G746 SC102 SMA6800M YG6260
    Text: SMA6862M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


    Original     		SMA6862M 24-pin) SMA6862M F 2452 mosfet B105 CF35 G746 SC102 SMA6800M YG6260 PDF

    sma6863

    Abstract: sma6863m samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet
    Text: SMA6863M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


    Original     		SMA6863M 24-pin) SMA6863M sma6863 samsung electrolytic capacitor B105 CF35 G746 SC102 SMA6800M YG6260 F 2452 mosfet PDF

    SLA6805M

    Abstract: SLA6805MP B105 CF35 G746 SC102 YG6260 SLA681 SLA6816M
    Text: SLA6816MP High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC IGBT power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating


    Original     		SLA6816MP 23-pin) SLA6816MP SLA6805M SLA6805MP B105 CF35 G746 SC102 YG6260 SLA681 SLA6816M PDF