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    GAN POWER MOSFET Search Results

    GAN POWER MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GAN POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "gallium nitride" mosfet

    Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
    Text: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can


    Original     		PDF reqM5113 LM5113 "gallium nitride" mosfet 48V MOSFET GaN power MOSFET "gallium nitride" Half-Bridge Driver

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Text: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original     		PDF 5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006

    BZX385-C11

    Abstract: zener diode A29
    Text: AN11130 Bias module for 50 V GaN demonstration boards Rev. 1 — 8 December 2011 Application note Document information Info Content Keywords GaN, bias Abstract This application note describes a bias controller module for GaN HEMT RF power transistors. It provides constant quiescent drain current with


    Original     		PDF AN11130 BZX385-C11 zener diode A29

    MGA-444940-02

    Abstract: 10 watt power amplifier chassis schematic diagram WPS44492202 2N2907 IRF242 GaN Bias 25 watt 56 OHM RESISTOR
    Text: MGA-444940-02 4.4 - 4.9 GHz 10W High Efficiency High Power Amplifier Data Sheet and Application Note May 2010 FEATURES APPLICATIONS GaN Based High Power Amplifier Telemetry 20% Efficiency at 33 dBm Linear Output Power Avionics 40 dBm P-3dB Private Microwave Network Systems


    Original     		PDF MGA-444940-02 64QAM) MGA-444940-02 2N2907 IRF242 100mA, 50ohm 10 watt power amplifier chassis schematic diagram WPS44492202 GaN Bias 25 watt 56 OHM RESISTOR

    Untitled

    Abstract: No abstract text available
    Text: MGA-444940-02 4.4 - 4.9 GHz 10W High Efficiency High Power Amplifier Data Sheet and Application Note May 2010 FEATURES APPLICATIONS GaN Based High Power Amplifier Telemetry 20% Efficiency at 33 dBm Linear Output Power Avionics 40 dBm P-3dB Private Microwave Network Systems


    Original     		PDF MGA-444940-02 64QAM) MGA-444940-02 2N2907 IRF242 100mA, 50ohm

    Pulse Power Amplifier Design

    Abstract: No abstract text available
    Text: Pulse Power Amplifier Design 02/19/2011 Class A/B power amplifier design using MOSFET or GAN devices may utilize several circuit topologies to achieve pulse amplification with fast rise-time and minimal ringing. This paper will review several techniques with their attributes and limitation or short comings.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1EDI EiceDRIVER Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Preliminary Data Sheet Rev. 1.02, 2014-04-08 Industrial Power Control Edition 2014-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG


    Original     		PDF 1EDI20N12AF

    LK141

    Abstract: 60W VHF TV RF amplifier
    Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation


    Original     		PDF ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses


    Original     		PDF RFJS3006F RFJS3006F DS130809

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix


    Original     		PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA625A – January 2012 – Revised May 2013 AN-2206 LM5114 Evaluation Board 1 Introduction The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations


    Original     		PDF SNVA625A AN-2206 LM5114 LM5114. EPC2001) LM5020,

    CGH35015

    Abstract: energy efficient wide bandgap devices 12 VOLTS INVERTER CIRCUIT USING MOSFET Infineon CoolMOS SMPS CIRCUIT DIAGRAM USING TRANSISTORS HEMT difference between IGBT and MOSFET IN inverter SMPS research paper High Voltage RF LDMOS Technology for Broadcast Applications SiC MOSFET
    Text: Energy Efficient Wide Bandgap Devices John W. Palmour Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, USA Abstract. As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF


    Original     		PDF

    MOSFET P-channel SOT-23-6

    Abstract: cl5000 transistor EP 430 LM5114
    Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The


    Original     		PDF LM5114 LM5114 OT-23-6 MOSFET P-channel SOT-23-6 cl5000 transistor EP 430

    4G base station power amplifier

    Abstract: No abstract text available
    Text: Virtuous impact of higher RF PA efficiency Circle of Green Rev. 2 — 5 July 2012 White paper Document information Info Content Author s Maury Wood – Program Manager, Operator marketing, NXP Semiconductors. The author acknowledges the contribution of the following NXP innovators who


    Original     		PDF

    Texas Instruments Power of GaN

    Abstract: Texas Instruments GaN "gallium nitride" mosfet
    Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The


    Original     		PDF LM5114 LM5114 OT-23-6 MF06A Texas Instruments Power of GaN Texas Instruments GaN "gallium nitride" mosfet

    OPT05

    Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
    Text: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: sales@empowerrf.com


    Original     		PDF

    MAX5048

    Abstract: No abstract text available
    Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The


    Original     		PDF LM5114 MAX5048

    208 SOT-23-6

    Abstract: MOSFET P-channel SOT-23-6 sot23 Flyback Converter
    Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The


    Original     		PDF LM5114 LM5114 208 SOT-23-6 MOSFET P-channel SOT-23-6 sot23 Flyback Converter

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended


    OCR Scan     		PDF F1260 724100T

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1207 060QfeOâ

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan     		PDF F1006 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1014 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetMtm process features gold metal for greatly extended


    OCR Scan     		PDF F1014 805J-484-3393 000012S