Untitled
Abstract: No abstract text available
Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency
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Text: TGA2598 6 – 12GHz 2W GaN Driver Amplifier Applications • Commercial and military radar Communications Electronic Warfare EW Product Features Functional Block Diagram Frequency Range: 6 – 12GHz PSAT: >33dBm PAE: >31%
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TGA2598
12GHz
12GHz
33dBm
100mA,
TGA2598
TQGaN25)
6-12GHz,
33dBm
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X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2
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AN-011
AN-011:
X-band Gan Hemt
GaN amplifier
Gan on silicon substrate
rf gan amplifier
MMIC X-band amplifier
x-Band Hemt Amplifier
AlGaN/GaN HEMTs
Gan on silicon transistor
Gan transistor
k 1535
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GaN amplifier
Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-013
AN-013:
NPTB00004
12-Watt
NPT25100
MRF6S9125
GaN amplifier
GaN amplifier 100W
GaAs HEMTs X band
25W Amplifier Research
NPTB00050
high power fet amplifier schematic
an-013 nitronex
Amplifier Research rf power amplifier schematic
broadband impedance transformation
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Untitled
Abstract: No abstract text available
Text: TGA2612 6-12 GHz GaN LNA Applications • Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 6–12GHz NF: < 1.8dB 1.5dB midband P1dB: 20dBm OTOI: 29dBm Small Signal Gain: >22dB
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TGA2612
12GHz
20dBm
29dBm
100mA,
TGA2612
TQGaN25)
12test
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Untitled
Abstract: No abstract text available
Text: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,
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TS16949.
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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Untitled
Abstract: No abstract text available
Text: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and
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30Gbps
30GHz
16X16
12GHz
24X18
40Ghz
43GHz/21
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Untitled
Abstract: No abstract text available
Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dBat2GHz Pin 1 Indicator High P1dB of +14.0dBmat6.0GHz and +11.0dBmat14.0GHz
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NBB-302
12GHz
0dBmat14
DS120130
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Untitled
Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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Untitled
Abstract: No abstract text available
Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dBat2GHz Pin 1 Indicator High P1dB of +14.0dBmat6.0GHz and +11.0dBmat14.0GHz
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NBB-302
12GHz
0dBmat14
NBB-302
DS120130
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VCC1
Abstract: GaN Amplifier 20GHz
Text: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-320-D
NDA-320-D
10GHz
14GHz
15GHz
20GHz
VCC1
GaN Amplifier 20GHz
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Untitled
Abstract: No abstract text available
Text: NDA-320-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE
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NDA-320-D
12GHz
NDA-320-D
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Untitled
Abstract: No abstract text available
Text: NBT-168 0,&52:$9 *D,Q3*D$V ',6&5(7( +%7 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
NBT-168
12GHz.
NBT-168-D)
NBT-168)
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84-1LMI
Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
84-1LMI
GaN matching 100 watt
MMB-330
NBT-168-D
NBT-168-T1
GaN Amplifier 12GHz
GaN Bias 25 watt
168E
BJT IC Vce
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CGY2108GS
Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services
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500MHz
160GHz
CGY2108GS
D01GH
D01MH
CGY2191UH/C2
D01PH
ED02AH
CGY2190UH/C2
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Untitled
Abstract: No abstract text available
Text: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-320-D
NDA-320-D
10GHz
14GHz
15GHz
20GHz
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Untitled
Abstract: No abstract text available
Text: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-320-D
12GHz
NDA-320-D
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Untitled
Abstract: No abstract text available
Text: NDA-322 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-322
12GHz
NDA-322
NDA-320-D
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Untitled
Abstract: No abstract text available
Text: NBB-300 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-300
12GHz
NBB-300
flexibilit-40
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Untitled
Abstract: No abstract text available
Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-302
NBB-302
NBB-300-D)
10GHz
14GHz
15GHz
20GHz
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138dbm
Abstract: NBB-300
Text: NBB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-300
NBB-300
NBB-300-D)
138dbm
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NDA-322
Abstract: 84-1LMI NDA-320-D 100ghz MMIC POWER AMPLIFIER hemt
Text: NDA-322 InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-322
12GHz
NDA-322
NDA-320-D
84-1LMI
100ghz MMIC POWER AMPLIFIER hemt
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