RF3934D
Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A
Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features Broadband Operation DC-4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged
|
Original
|
PDF
|
RF3934D
RF3934D
96mmx4
57mmx0
DS110225
GaN amplifier 120W
SiC BJT
RFMD HEMT GaN SiC
120w power Operational amplifier 10A
|
Untitled
Abstract: No abstract text available
Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features Broadband Operation DC-4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged Performance
|
Original
|
PDF
|
RF3934D
96mmx4
57mmx0
DS110520
|
Untitled
Abstract: No abstract text available
Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features Broadband Operation DC-4GHz Advanced GaN HEMT Technology RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged
|
Original
|
PDF
|
RF3934D
RF3934D
96mmx4
57mmx0
DS110520
|
Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFG1M09090
700MHZ
1000MHZ
1000MHZ
RF400-2
865MHz
960MHz
44dBm
|
Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFG1M09090
700MHZ
1000MHZ
RFG1M09090
RF400-2
865MHz
960MHz
44dBm
|
ATC100B100JT
Abstract: ATC100B1R8BT alt110
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power>120W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFG1M09090
700MHZ
1000MHZ
RFG1M09090
RF400-2
865MHz
960MHz
44dBm
ATC100B100JT
ATC100B1R8BT
alt110
|
Untitled
Abstract: No abstract text available
Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general
|
Original
|
PDF
|
RF3934D
RF3934D
51dBm
DS130906
|
Untitled
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical
|
Original
|
PDF
|
RF3934
DS120306
|
GaN ADS
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance
|
Original
|
PDF
|
RF3934
RF3934
DS111121
GaN ADS
|
Untitled
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical
|
Original
|
PDF
|
RF3934
RF3934
DS121207
|
Untitled
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical
|
Original
|
PDF
|
RF3934
RF3934
DS120306
|
GRM55ER72A475KA01L
Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance
|
Original
|
PDF
|
RF3934
RF3934
DS111005
GRM55ER72A475KA01L
DS111005
GRM32NR72A104KA01L
ATC800A330JT
RF3934PCBA-410
140W
ERJ8GEYJ100V
GaN ADS
|
bifet amplifier discrete schematic
Abstract: ERJ8GEYJ100V thermocouple gaas
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance
|
Original
|
PDF
|
RF3934
RF3934
DS120202
bifet amplifier discrete schematic
ERJ8GEYJ100V
thermocouple gaas
|
Untitled
Abstract: No abstract text available
Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
|
Original
|
PDF
|
RF3934
RF3934
DS131206
|
|
|
GaN amplifier
Abstract: RF3934 Gan transistor GaN amplifier 120W mobile rf power amplifier transistor GaN BJT DSB070530 Hemt transistor
Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation
|
Original
|
PDF
|
RF3934
RF3934
DSB070530
GaN amplifier
Gan transistor
GaN amplifier 120W
mobile rf power amplifier transistor
GaN BJT
DSB070530
Hemt transistor
|
ATC100B100JT
Abstract: RFMD PA LTE
Text: RFG1M09090 700MHz to 1000MHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology Peak Modulated Power >120W Advanced Heat-Sink Technology Single Circuit for 865MHz to 960MHz 48V Operation Typical Performance
|
Original
|
PDF
|
RFG1M09090
700MHz
1000MHz
RF400-2
865MHz
960MHz
44dBm
-55dBc
RFG1M09090
ATC100B100JT
RFMD PA LTE
|
GRM32NR72A104KA01L
Abstract: GaN ADS GaN amplifier 120W RF3934 GRM55ER72A475KA01L ATC800A330JT ATC800A ERJ8GEYJ100V
Text: RF3934 120W GaN WIDE-BAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical
|
Original
|
PDF
|
RF3934
RF3934
hi-5570
440mA
DS101110
GRM32NR72A104KA01L
GaN ADS
GaN amplifier 120W
GRM55ER72A475KA01L
ATC800A330JT
ATC800A
ERJ8GEYJ100V
|
EAR99
Abstract: GaN 100 watt GaN TRANSISTOR GaN matching 100 watt RF3934 Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932
Text: RFMD . 120 Watt GaN Wideband Power Amplifier The RF3934, the newest of RFMD’s series of unmatched power transistors, is a 48 volt, 120-watt high power discrete amplifier designed for commercial wireless infrastructure, military, industrial/ scientific/medical, and general purpose broadband amplifier
|
Original
|
PDF
|
RF3934,
120-watt
RF3934
EAR99
GaN 100 watt
GaN TRANSISTOR
GaN matching 100 watt
Gan hemt transistor RFMD
GaN amplifier
RF393X
RF3931
RF3932
|
Untitled
Abstract: No abstract text available
Text: RFG1M09090 RFG1M09090 90W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09090 is optimized for commercial infrastructure applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride
|
Original
|
PDF
|
RFG1M09090
700MHz
1000MHz
RFG1M09090
1000MHz
DS130830
|
Gan hemt transistor RFMD
Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
|
Original
|
PDF
|
T1G4012036-FS
T1G4012036-FS
|
Untitled
Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
|
Original
|
PDF
|
T1G4012036-FL
T1G4012036-FL
|
Untitled
Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
|
Original
|
PDF
|
T1G4012036-FL
T1G4012036-FL
|
Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
|
Original
|
PDF
|
T1G4012036-FS
T1G4012036-FS
|
