ITT130AK
Abstract: SC74 5310 VA MARKING
Text: SPST High Isolation, Absorptive Switch Negative or Positive Control ITT130AK FEATURES • • • • • High isolation 39 dB at 2.5 GHz Miniature, SOT6 package Reflective open port (J1) Non-Reflective port (J2) Self-Aligned MSAG Process TRUTH TABLE (Negative Control)
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ITT130AK
ITT130AK
SC74
5310
VA MARKING
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ITTS501AJ
Abstract: rf05v itt501 SPDT HIGH POWER
Text: SPDT High Power T/R Switch ITTS501AJ PRELIMINARY INFORMATION FEATURES • • • MSOP-8 package Positive Control Self-Aligned MSAG -Switch MESFET Process Description Maximum Ratings T The ITT501AJ is a high power SPDT switch in a very small plastic MSOP package for
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ITTS501AJ
ITT501AJ
ITTS501AJ
rf05v
itt501
SPDT HIGH POWER
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8c4n
Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC ITT2104AF
Text: 3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900 ITT2104AF Applications Features • • • • • • • • Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM VDD1 VDD2 N/C GND GND GND GND GND RF IN PRELIMINARY Single Positive Supply
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N-PCS/ISM900
ITT2104AF
MAXIMU24019
8c4n
1008CS
C0805C472K5RAC
C1206C104K5RAC
ITT2104AF
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ITT8507D
Abstract: No abstract text available
Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT8507D
ITT8507D
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ITT313503D
Abstract: No abstract text available
Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS
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ITT313503D
ITT313503D
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ITT2305AK
Abstract: No abstract text available
Text: 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK PRELIMINARY FEATURES • • • • • • • • 20 dB Gain – dramatically increases range of your low power bluetooth devices Single 3.0V positive supply – operates over a wide range of supply voltages
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100mW
ITT2305AK
ITT2305AK
100pF
4700pF
GRM36X7R472K25AB
CO6CF0R5B50U
210Ohm
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10W Power Amplifier
Abstract: ITT338509D 6 ghz amplifier 10w
Text: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT338509D
ITT338509D
10W Power Amplifier
6 ghz amplifier 10w
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ITT002AB
Abstract: No abstract text available
Text: SPDT Non-Reflective Switch - High Isolation Negative or Positive Control ITT002AB FEATURES • • • • • • • • SOIC-8 package Non-Reflective High Isolation 40 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors
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ITT002AB
ITT002AB
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5.5 GHz power amplifier
Abstract: ITT8403FP 6 18 ghz amplifier 4w ITT8403
Text: 4W Power Amplifier 5.5 – 7.2 GHz ITT8403FP ADVANCED INFORMATION FEATURES • • • • • 40% Typical Power Added Efficiency 18 dB Typical Small Signal Gain 45 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance.
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ITT8403FP
8403FP
ITT8403
5.5 GHz power amplifier
ITT8403FP
6 18 ghz amplifier 4w
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Untitled
Abstract: No abstract text available
Text: 2W Power Amplifier 13 – 15 GHz ITT8502 ADVANCED INFORMATION FEATURES • • • • • • 24% Typical Power Added Efficiency 17.5 dB Typical Small Signal Gain 39.5 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance
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ITT8502
8502FN
8502FP
ITT8502
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ITT373501D
Abstract: digital phase shifter mhz
Text: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In
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ITT373501D
ITT373501D
150umX150um
digital phase shifter mhz
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ITT333105BD
Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Text: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation
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ITT333105BD
ITT333105BD
1008CS
C0805C472K5RAC
C1206C104K5RAC
LL2012-F1N5S
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ITT502AJ
Abstract: ITTS502AJ SPDT HIGH POWER
Text: SPDT High Power T/R Switch, DC TO 3.5 GHz ITTS502AJ PRELIMINARY INFORMATION FEATURES • • • • DC - 3.5 GHz Operation Low insertion loss Positive 3 to 5 volt control Small MSOP8 package Description Maximum Ratings T The ITT502AJ is a high power SPDT switch in
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ITTS502AJ
ITT502AJ
ITTS502AJ
SPDT HIGH POWER
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ITT8506D
Abstract: No abstract text available
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power
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ITT8506D
ITT8506D
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ITTS402AH
Abstract: J12-3
Text: SP4T Switch, 3 Volt Positive Control ITTS402AH ADVANCED INFORMATION FEATURES • • • • • QSOP-28 lead package Non-Reflective Low DC Power Consumption Positive Control when “floated” with capacitors Self-Aligned MSAG MESFET Process Description
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ITTS402AH
QSOP-28
ITTS402AH
J12-3
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ITTA503AD
Abstract: No abstract text available
Text: GaAs Digital Attenuator, 5 Bit, 0.5,1,2,4,8 dB DC 2.0 GHz ITTA503AD ADVANCED INFORMATION FEATURES • • • 15.5 dB Attenuation Range in 0.5 dB steps High attenuation accuracy Packaged in a SOIC 16 package Description Maximum Ratings T The ITTA503AD is a GaAs FET Digital Attenuator
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ITTA503AD
ITTA503AD
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32TBD
Abstract: ITT338505D
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ADVANCED INFORMATION ITT338505D Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
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ITT338505D
ITT338505D
32TBD
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Untitled
Abstract: No abstract text available
Text: 12W Power Amplifier Die 9 – 10.5 GHz ITT338510D FEATURES • • • • • • ADVANCED INFORMATION Three Stage Balanced High Power Amplifier Broadband Performance 34% Minimum Power Added Efficiency High Linear Gain: 25 dB Minimum Input VSWR 2:1, Minimum
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ITT338510D
ITT338510D
150umX150um
150umX200um
150umX950um
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GaAsTEK
Abstract: No abstract text available
Text: 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ Preliminary FEATURES • • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package
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ITT2206GJ
ITT2206GJ
GaAsTEK
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ITT S11
Abstract: No abstract text available
Text: 1W Power Amplifier 12 - 16 GHz ITT8602FN PRELIMINARY FEATURES • • • • • • 35.5 dB Typical Small Signal Gain 50 Ω Input/Output Impedance 40 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance at Ku-band.
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ITT8602FN
8602FN
ITT8602FN
ITT S11
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15 GHz high power amplifier
Abstract: No abstract text available
Text: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402FM ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical
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ITT8402FM
8402FM
ITT8402FM
15 GHz high power amplifier
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111A240
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gsat
Abstract: No abstract text available
Text: 6W Power Amplifier 5.5 – 7.0 GHz ITT8404 FN/FP ADVANCED INFORMATION FEATURES • • • • 30% Typical Power Added Efficiency High Linear Gain: 16 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8404FN
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ITT8404
8404FN
8404FP
gsat
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Untitled
Abstract: No abstract text available
Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D Balanced Three Stage LNA with Limiter FEATURES • • • • ADVANCED INFORMATION 8 to 11 GHz Operation 50 Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
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ITT313503D
ITT313503D
150umX150um
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