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    GAAS PHOTODIODE OPERATING TEMPERATURE RANGE Search Results

    GAAS PHOTODIODE OPERATING TEMPERATURE RANGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    GAAS PHOTODIODE OPERATING TEMPERATURE RANGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5GHz GaAs PIN Photodiode Module • • • • • • GaAs PIN Photodiode Module Features High Responsivity High speed, typical 1.5 GHz Low dark current, < 1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C Hermetically sealed TO-18 package in pigtailed or


    Original     		100cm 50/125um 5/125um PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs PIN Photodiode Module GaAs PIN Photodiode Module Features • High Responsivity • High speed, typical 3.5 GHz • Low dark current, < 1nA • Low capacitance, typical 0.7pF • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or


    Original     		100cm 50/125um 5/125um PDF

    GaAs 1000 nm Infrared Diode,

    Abstract: SD1410 SD1420 SD1440 SE1450
    Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and


    Original     		SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420 PDF

    photodiode ge

    Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
    Text: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,


    Original     		26-Aug-08 photodiode ge TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation PDF

    FU-319SPP-C6

    Abstract: nrz optical oc48 photodiode preamplifier AGC STM-16 coaxial pin photodiode module stm-16 coaxial 5pin pin Photodiode preamp mitsubishi fu 1.31 ber
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPP-C6 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems.


    Original     		FU-319SPP-C6 FU-319SPP-C6 -23dBm OC-48, STM-16) nrz optical oc48 photodiode preamplifier AGC STM-16 coaxial pin photodiode module stm-16 coaxial 5pin pin Photodiode preamp mitsubishi fu 1.31 ber PDF

    Physics and Technology

    Abstract: physics pn junction diode structure
    Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original     		06-Oct-14 Physics and Technology physics pn junction diode structure PDF

    FU-319SPA-CV6

    Abstract: 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


    Original     		FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz PDF

    preamplifier AGC IR

    Abstract: FU-319SPP-CV6 STM-16 photodiode preamplifier AGC coaxial pin photodiode module 50 um photodiode pin Photodiode preamp
    Text: TZ7-99-460B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPP-CV6 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-CV6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems.


    Original     		TZ7-99-460B FU-319SPP-CV6 FU-319SPP-CV6 -23dBm OC-48, STM-16) 86GHz, preamplifier AGC IR STM-16 photodiode preamplifier AGC coaxial pin photodiode module 50 um photodiode pin Photodiode preamp PDF

    photodiode Avalanche photodiode

    Abstract: InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note FU-319SPA-CV6 459b STM-16 TZ7-99-459B mitsubishi APD APD, applications, bias supply
    Text: TZ7-99-459B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


    Original     		TZ7-99-459B FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 86GHz, photodiode Avalanche photodiode InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note 459b STM-16 mitsubishi APD APD, applications, bias supply PDF

    InGaAs apd photodiode

    Abstract: photodiode Avalanche photodiode photodiode preamplifier AGC APD, applications, power supply APD Ghz FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi APD APD for fiber test
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication


    Original     		FU-319SPA-C6 FU-319SPP-C6 -33dBm OC-48, STM-16) InGaAs apd photodiode photodiode Avalanche photodiode photodiode preamplifier AGC APD, applications, power supply APD Ghz FU-319SPA-C6 STM-16 mitsubishi APD APD for fiber test PDF

    Bookham

    Abstract: PTV2400 PTV2400-98 PTV2400-98G 98c33 CASE TO 4 PTV2400 bookham pin j* 1803 8 pin Bookham Technology tl
    Text: Data sheet 2.5Gb/s Mini-DIL Receiver Features PTV2400 • Wavelength range 1200 - 1600nm The PTV2400 is an optical receiver suitable for 2.5Gb/s short reach SDH/SONET/ATM single-mode applications. It uses Bookham Technology’s one piece fiber alignment technology offering high stability and


    Original     		PTV2400 1600nm PTV2400 TA-NWT-00983. TA-NWT-000983 capab15040 ISO14001 EMS35100 Bookham PTV2400-98 PTV2400-98G 98c33 CASE TO 4 PTV2400 bookham pin j* 1803 8 pin Bookham Technology tl PDF

    TGA4817

    Abstract: 16CT-G
    Text: Product Data Sheet August 5, 2008 10Gb/s Wide Dynamic Range Differential TIA TGA4817 Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm CPIN = 0.2 pF RPIN = 15 Ohm


    Original     		10Gb/s TGA4817 OC-192/STM-64 0007-inch TGA4817 16CT-G PDF

    OC74

    Abstract: No abstract text available
    Text: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm


    Original     		10Gb/s TGA4817-EPU 0007-inch OC74 PDF

    TGA4817-EPU

    Abstract: No abstract text available
    Text: Advance Product Information December 18, 2003 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • 3200Ω Single-Ended Transimpedance > 9 GHz 3dB Bandwidth > 1.6mA RMS Input Overload Current 11pA/ √Hz Input Noise Current


    Original     		10Gb/s TGA4817-EPU 0007-inch TGA4817-EPU PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode EPD-880-5-0.9 04.05.2007 Prototype rev. 01/07 Wavelength Type Technology Case Infrared Integrated filter AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow bandwidth and high spectral sensitivity in the infrared range


    Original     		EPD-880-5-0 D-12555 PDF

    TA-TSY-000983

    Abstract: photodiode DSC PPA1515-155-A-DN PPA1515-155-A-FP PPA1515-155-A-SC PPA1515-155-A-ST PPA1515-155-D-FP PPA1515-XXX-X-XX
    Text: WhoI HEWLETT m Llim PACKARD Pigtailed PIN-PREAMP Technical Data PPA1515-155/622 Features Description • Integrated InGaAs PIN and GaAs Preamplifier The PPA1515 is a compact fiber pigtailed InGaAs photodiode with preamplifier designed for wide operating temperature range, low


    OCR Scan     		PPA1515-155/622 PPA1515 PPA1515-155-A-FP PPA1515-155-A-ST PPA1515-155-A-DN PPA1515-155-A-SC PPA1515-155-D-FP PPA1515-155-D-ST PPA1515-155-D-DN PPA1515-155-D-SC TA-TSY-000983 photodiode DSC PPA1515-XXX-X-XX PDF

    GaAs 1000 nm Infrared Diode,

    Abstract: SE1450-002L
    Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and


    OCR Scan     		SE1450 SD1420 SD1440 SD1410 SE1450 SE1450-XXXL) SE1450-XXX SD1440 GaAs 1000 nm Infrared Diode, SE1450-002L PDF

    dd127

    Abstract: TA-TSY-000983
    Text: Whpl H E W L E T T mLfimPA C K A R D Connectorized PIN-PREAMP Technical Data PPA0515-052/155/622 Features Description • Integrated InGaAs PIN and GaAs Preamplifier The PPA0515 is a compact connectorized InGaAs photodiode with preamplifier designed for wide operating temperature range,


    OCR Scan     		PPA0515-052/155/622 PPA0515 4447SA4 PPA0515-XXX-XX-A PPA0515-052-FC-A PPA0515-155-FC-A PPA0515-622-FC-A PPA0515-052-SC-A PPA0515-155-SC-A PPA0515-622-SC-A dd127 TA-TSY-000983 PDF

    GaAs 1000 nm Infrared Diode,

    Abstract: SE1450-002L se1450-003l
    Text: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410


    OCR Scan     		SE1450 SD1410 SE1450 SE1450-XXXL) SE1450-XXX SD1440 GaAs 1000 nm Infrared Diode, SE1450-002L se1450-003l PDF

    InGaAs apd photodiode

    Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication


    OCR Scan     		FU-319SPA-C6 FU-319SPP-C6 -33dBm OC-48, STM-16) bS4102T InGaAs apd photodiode photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber PDF

    GaAs photodiode 10G

    Abstract: NTT Electronics GaAs NLG2132 10G PD photodiode 10Ghz PIN
    Text: NS GD E056D PRELIMINARY MAY 29, 2000 NEL NLG2132 TRANSIMPEDANCE AMPLIFIER BARE DIE This NLG2132 is a GaAs MESFET IC Chip that performs signal amplification over the wide frequency range extending from DC to 7.7 GHz. This IC Chip is applicable to 10 Gb/s optical fiber communication systems.


    OCR Scan     		E056D NLG2132 NLG2132 10Gb/s GaAs photodiode 10G NTT Electronics GaAs 10G PD photodiode 10Ghz PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: w B T & D TECHNOLOGIES MSE D B 1105063 QDOD123 S HBTDT -M i- \ T ss «*-. E sv C MMuAih •iws ' H N O -it w S ' L \Sa \ O I G I 91 S E S , k-l j \\ S PDC1211-52/155 WIDE DYNAMIC RANGE GaAs IC PINFET RECEIVER Features Applications I Ultra high reliability planar InGaAs


    OCR Scan     		QDOD123 PDC1211-52/155 USE-0058-08 PDF

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2420 Silicon Photodiode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Ideal for direct mounting to printed circuit boards • Mechanically and spectrally matched to SE2460


    OCR Scan     		SD2420 SE2460 SE2470 SD2420 H5S1B30 00S251S PDF