GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Search Results

GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Result Highlights (5)

Part	Manufacturer	Description
TB67H481FTG	Toshiba Electronic Devices & Storage Corporation	Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TCR5RG28A	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC

GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KCW-10 Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10 Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die	Original	5091-1988E 5964-6644E KCW-10 AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10	PDF
84-1LMI epoxy adhesive Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.	Original	SPT-1002-A-W-2015-L-F 84-1LMI epoxy adhesive 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS	PDF
Untitled Abstract: No abstract text available Text: v01.0801 APPLICATION NOTES HANDLING GUIDELINES FOR ESD PROTECTION OF GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs All electrical components are sensitive in some degree to Electrostatic Discharge ESD , and GaAs MMICs are no exception. Many digital semiconductors have some level of protection circuitry designed into the input and output pins.	Original	MIL-STD-1686.	PDF
Untitled Abstract: No abstract text available Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Handling Guidelines for ESD Protection of GaAs MMICs General Application Note Hittite Microwave Corporation	Original	MIL-STD-1686. AS-9100.	PDF
AN-S002 Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf	Original	AN-G006 MGA-64135 5091-3745E70 5091-9313E AN-S009 5091-9054E AN-S010 5966-0453E AN-S014 AN-S002 AN-S013 5091 AN-S001 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic	PDF
body contact FET soi RF switch Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises	Original		PDF
Die Attach and Bonding Guidelines Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in	Original	HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 HMMC-5618 HMMC-5033/rev Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC	PDF
ablebond 84-1 LMI Abstract: ABLEBONd 84-1 A004R AMMC-6222 AMMC-6222-W10 Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222 AMMC-6222 7-21GHz GaAs High Linearity Low Noise Amplifier Description Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz.	Original	AMMC-6222 7-21GHz AMMC-6222 21GHz. AMMC-6222-W10 AMMC-6222-W50 ablebond 84-1 LMI ABLEBONd 84-1 A004R AMMC-6222-W10	PDF
HP MMIC INA Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier Text: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF	Original	20-Nov-97 docs\amps\00 docs\amps\01 docs\amps\06 MGA-87563 docs\amps\10 docs\amps\11 HP MMIC INA mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier	PDF
ultrasonic probe ge Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes	Original	AN-1001 ultrasonic probe ge GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave	PDF
HMMC-2027 Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines Text: Agilent HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: >70 dB @ 45 MHz >30 dB @ 26.5 GHz • Return loss:	Original	HMMC-2027 HMMC-2027 5965-5450E 5988-3197EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines	PDF
PUNSE Abstract: 1GG7-8005 1GG7 Text: Agilent HMMC-2027 DC–26.5 GHz SPDT GaAs MMIC Switch 1GG7-8005 Data Sheet SEL1 RF OUT1 SEL2 RF OUT2 Features • Outputs terminated in 50 Ω when off • Frequency range: DC to 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: > 70 dB @ 45 MHz	Original	HMMC-2027 1GG7-8005 5989-6204EN PUNSE 1GG7	PDF
HMMC-2006 Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines Text: Agilent HMMC-2006 DC–6 GHz Unterminated SPDT Switch Data Sheet SEL1 Features • Frequency range: DC– 6 GHz SEL2 • Insertion loss: <1dB @ 6 GHz RF OUT2 RF OUT1 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz • Return loss: >12 dB Both input & output	Original	HMMC-2006 HMMC-2006 5967-5765E 5988-3199EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines	PDF
1gg6 Abstract: No abstract text available Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)	Original	HMMC-5032 1GG6-8009 HMMC-5040 HMMC-5618 5989-6209EN 1gg6	PDF

Untitled Abstract: No abstract text available Text: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger	Original	HMMC-5021 HMMC-5026 HMMC-5021/26 5965-5449E 5988-1893EN	PDF
27S12 Abstract: No abstract text available Text: Agilent HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHz) and HMMC-5026 (2-26.5 GHz) 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier Features Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm (117.3 × 30.3 mils) ±10 µm (±0.4 mils)	Original	HMMC-5021 HMMC-5022 HMMC-5026 HMMC-5021/22/26 HP83040 150mA) HMMC-5021/22/26/rev 27S12	PDF
Untitled Abstract: No abstract text available Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within	Original	HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E 5988-2710EN	PDF
Traveling Wave Amplifier Abstract: No abstract text available Text: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger	Original	HMMC-5021 HMMC-5026 HMMC-5021/26 HP83040 5988-1893EN V02-3634EN Traveling Wave Amplifier	PDF
Untitled Abstract: No abstract text available Text: HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit MMIC designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a general-purpose, single-pole,	Original	HMMC-2027 HMMC-2027 5988-3197EN AV01-0316EN	PDF
5038 Abstract: No abstract text available Text: Avago HMMC-5038 38 GHz LNA Data Sheet Chip Size: 1630 x 760 µm 64.2 x 29.9 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils) Description The HMMC-5038 MMIC is a high-gain low-noise	Original	HMMC-5038 HMMC-5038 5965-5445E 5988-2711EN 5038	PDF
45580 Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC Text: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:	Original	HMMC-5617 1GG6-8002 HMMC-5617 5989-9479EN 45580 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC	PDF
AN-S002 Abstract: 5091-9054E AN-S014 AN-S011 Text: f ï J l HEW LETT '1 1 PACKARD “KM Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at:	OCR Scan	AN-G006 MGA-64135 5966-0453E AN-S011 5091-7798E AN-S013 5091-6488E AN-S014 AT-41411 AN-S002 5091-9054E	PDF
GaAS MMIC Assembly and Handling Guidelines Abstract: hp 502 ghz power Text: Whpl W LETT mL'HM HPAE CK ARD GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz 35 dB at 6 GHz • High PidB' 23 dBm at 50 MHz >27 dBm at 6 GHz	OCR Scan	HMMC-2006 HMMC-2006 GaAS MMIC Assembly and Handling Guidelines hp 502 ghz power	PDF
Untitled Abstract: No abstract text available Text: blE T> m HEWLETT-PACKARD/ CMPNTS 4447564 DDlOlflS 4Tb • H P A Whol H EW L E T T 1J' EM PA C K A R D GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz	OCR Scan	HMMC-2006 HMMC-2006 44475A4	PDF

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GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Search Results

GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Result Highlights (5)

GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Datasheets Context Search

KCW-10

84-1LMI epoxy adhesive

Untitled

Untitled

AN-S002

body contact FET soi RF switch

Die Attach and Bonding Guidelines

ablebond 84-1 LMI

HP MMIC INA

ultrasonic probe ge

HMMC-2027

PUNSE

HMMC-2006

1gg6

Untitled

27S12

Untitled

Traveling Wave Amplifier

Untitled

5038

45580

AN-S002

GaAS MMIC Assembly and Handling Guidelines

Untitled