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    GAAS MESFET AMPLIFIER WITH HIGH INPUT IMPEDANCE Search Results

    GAAS MESFET AMPLIFIER WITH HIGH INPUT IMPEDANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation

    GAAS MESFET AMPLIFIER WITH HIGH INPUT IMPEDANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT


    Original     		PDF HMC637LP5/637LP5E HMC637LP5 25mm2

    HMC637LP5E

    Abstract: HMC637LP5 GaAs MESFET amplifier with high input impedance
    Text: HMC637LP5 / 637LP5E v02.0709 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT


    Original     		PDF HMC637LP5 637LP5E 25mm2 HMC637LP5E GaAs MESFET amplifier with high input impedance

    MESFET Application

    Abstract: No abstract text available
    Text: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT


    Original     		PDF HMC637LP5/637LP5E HMC637LP5 25mm2 MESFET Application

    Untitled

    Abstract: No abstract text available
    Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB


    Original     		PDF HMC637LP5 637LP5E 25mm2

    MESFET Application

    Abstract: No abstract text available
    Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB


    Original     		PDF HMC637LP5 637LP5E 25mm2 MESFET Application

    ap910401

    Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
    Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology


    Original     		PDF MGA-444940-02 ap910401 mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10

    trw rf transistor

    Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors

    SOIC-16

    Abstract: No abstract text available
    Text: TA0006   TA0006 Wireless Antenna Interface      The demand for consumer wireless products poses design challenges with respect to cost, performance, packaging and semiconductor technology. The author provides practical guidelines, illustrating them with an


    Original     		PDF TA0006 communi21 SOIC-16

    RF2131

    Abstract: TA0013 trw rf transistor HBT transistor
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.


    Original     		PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor

    MPS 808

    Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
    Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical


    Original     		PDF

    trw rf transistor

    Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier         operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS


    Original     		PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR

    qualcomm spread spectrum receiver

    Abstract: Qualcomm "spread spectrum" receiver
    Text: TA0023 ! TA0023 Systems RF9936/RF9986: High Dynamic Range GaAs HBT LNA/Mixers for PCS       A family of fully monolithic GaAs Heterojunction Bipolar Transistor HBT LNA/Mixer products have been developed to address spread-spectrum Personal Communication System (PCS) applications in the North


    Original     		PDF TA0023 RF9936/RF9986: 1930MHz 1990MHz RF9936 RF9936, RF9976, RF9986 QSOP-24 qualcomm spread spectrum receiver Qualcomm "spread spectrum" receiver

    C-Band Power GaAs FET HEMT Chips

    Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
    Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and


    Original     		PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    ATF-35176

    Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
    Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band

    GaN amplifier

    Abstract: GaN Bias 25 watt Gan on silicon transistor rf microwave amplifier with S Parameters rf power amplifier transistor with s-parameters rf power amplifier with s parameters S-10 S-14 high power fet amplifier schematic power amplifier mmic design high efficiency
    Text: 11/02/01 LB Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier Inder J. Bahl Abstract This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over


    Original     		PDF

    MPS 808

    Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
    Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical


    Original     		PDF

    2w,GaAs FET

    Abstract: ITT6401D
    Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply


    Original     		PDF ITT6401D ITT6401D 360mA 2w,GaAs FET

    ATF-13484

    Abstract: AN-G001 MTT-24 low noise design ATF 10136 AN-G004 "common drain" amplifier impedance matching MIXER SCHEMATIC DIAGRAM 5091-3744E 13484 active mixer
    Text: Active GaAs FET Mixers Using the ATF-10136, ATF-13736, and ATF-13484 Application Note G005 NOTE: The ATF-13484 has been obsoleted. However, the design techniques used with the ATF-13484 active mixer can be applied to the ATF-13736 as well. Introduction This application note documents


    Original     		PDF ATF-10136, ATF-13736, ATF-13484 ATF-13736 ATF-10136 AN-G001 MTT-24 low noise design ATF 10136 AN-G004 "common drain" amplifier impedance matching MIXER SCHEMATIC DIAGRAM 5091-3744E 13484 active mixer

    s-band 50 Watt solid state power amplifier high p

    Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
    Text: California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 DESIGN CHALLENGES


    Original     		PDF AN1038 ato50 60-Watt s-band 50 Watt solid state power amplifier high p AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF

    mesfet datasheet by motorola

    Abstract: AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917 motorola operational amplifier motorola rf spice
    Text: Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector INTRODUCTION


    Original     		PDF AN1599/D AN1599 MRFIC0913 MC33169 RFAN1599/D mesfet datasheet by motorola AN1580 AN1599 MMBD701LT1 MMSF4N01HD MRFIC0917 motorola operational amplifier motorola rf spice

    GaAsTEK

    Abstract: No abstract text available
    Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply


    OCR Scan     		PDF ITT6401D ITT6401D loQ-360mA GaAsTEK

    Untitled

    Abstract: No abstract text available
    Text: RF2403 T R A N S C E IV E R FRONT-END MICRO-DEVICES Typical Applications • 915 M Hz ISM Band Products Wireless Security Systems • Transceiver Front-Ends Wireless LANs • 900 M Hz Cordless Telephones POS Terminals Product Description The RF2403 is a transceiver front-end integrating a single-stage low noise amplifier, a two-stage power amplifier,


    OCR Scan     		PDF RF2403 RF2403 915MHz TGG4131