2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
|
Original
|
P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
|
PDF
|
nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
|
Original
|
X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
|
PDF
|
2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
|
Original
|
X13769XJ2V0CD00
PC8119T
PC8120T
PC8130TA
PC8131TA
PG175TA
PC2723T
PC3206GR
PC2748
PC2745
2SK2396
PC2763
pc1658
ne27283
2SC3545
2SC3357
2sc2757
ne93239
2SC2570A
PC2711
|
PDF
|
marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
|
Original
|
P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
|
PDF
|
UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
|
Original
|
D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
|
PDF
|
gaas fet T79
Abstract: NES1821B-30
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE
|
Original
|
NES1821B-30
NES1821B-30
24-Hour
gaas fet T79
|
PDF
|
NES1821B-30
Abstract: gaas fet T79 d3125
Text: 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE • PARTIALLY MATCHED
|
Original
|
NES1821B-30
NES1821B-30
st163
24-Hour
gaas fet T79
d3125
|
PDF
|
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
|
PDF
|
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
|
PDF
|
GL 7815
Abstract: gaas fet T79
Text: PRELIMINARY DATA SHEET S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) HIGH LINEAR GAIN: 10.0 dB
|
OCR Scan
|
NEZ3436-30E
GL 7815
gaas fet T79
|
PDF
|
gaas fet T79
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a W afer Qual Test) • HIGH LINEAR GAIN: 10 OdB
|
OCR Scan
|
NEZ3436-30E
NEZ3436-30E
24-Hour
gaas fet T79
|
PDF
|
free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
|
Original
|
X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
|
PDF
|
gaas fet T79
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NES2527B-30 Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a Wafer Qual Test) • HIGH LINEAR GAIN: 13.0 dB
|
OCR Scan
|
NES2527B-30
NES2527B-30
1500pF
24-Hour
gaas fet T79
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test)
|
OCR Scan
|
NES2527B-30
NES2527-30
|
PDF
|
|
|
NES2527-30
Abstract: NES2527B-30 gaas fet T79 J265
Text: S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 at 33 dBm SCL (Verified by a Wafer Qual Test) 24±0.2 20.4±0.15 • HIGH LINEAR GAIN: 13.0 dB
|
Original
|
NES2527B-30
1500pF
250pF
NES2527-30
24-Hour
gaas fet T79
J265
|
PDF
|
gaas fet T79
Abstract: NES2527-30 J265 NES2527B-30
Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 13.0 dB
|
Original
|
NES2527B-30
NES2527B-30
1500pF
250pF
NES2527-30
24-Hour
gaas fet T79
NES2527-30
J265
|
PDF
|
MESFET 24A
Abstract: HD 1077 O NEZ3436-30E
Text: S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) • HIGH LINEAR GAIN: 10.0 dB • EFFICIENT LINEAR OPERATION:
|
OCR Scan
|
NEZ3436-30E
NEZ3436-30E
24-Hour
MESFET 24A
HD 1077 O
|
PDF
|
NES2527B-30
Abstract: NES2527-30
Text: S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 at 33 dBm SCL (Verified by a Wafer Qual Test) 24±0.2 20.4±0.15 1.0±0.1 GATE
|
Original
|
NES2527B-30
NES2527B-30
1500pF
250pF
NES2527-30
24-Hour
NES2527-30
|
PDF
|
NEZ3436-30E
Abstract: No abstract text available
Text: S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 10.0 dB
|
Original
|
NEZ3436-30E
NEZ3436-30E
24-Hour
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ Units in mm • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • PARTIALLY MATCHED
|
OCR Scan
|
NES1821B-30
24-Hour
|
PDF
|
ES1821
Abstract: M 0737
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED
|
OCR Scan
|
NES1821
1821B-30
ES1821
M 0737
|
PDF
|
gaas fet T79
Abstract: ES182
Text: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY
|
OCR Scan
|
NE81K1M0
ES1821B-30
24-Hour
gaas fet T79
ES182
|
PDF
|
MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
|
Original
|
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
|
PDF
|
MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
|
Original
|
BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
|
PDF
|