EFA025AL
Abstract: No abstract text available
Text: EFA025AL High Gain GaAs Power FET FEATURES • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,
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EFA025AL
12GHz
18GHz
EFA025AL
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EFA025AL
Abstract: No abstract text available
Text: Excelics EFA025AL DATA SHEET High Gain GaAs Power FET • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,
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EFA025AL
12GHz
18GHz
EFA025AL
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100MIL
Abstract: GaAs FET EFA025A
Text: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EFA025A-100P
100MIL
12GHz
18GHz
GaAs FET EFA025A
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EFA025A
Abstract: No abstract text available
Text: EFA025A Low Distortion GaAs Power FET FEATURES 420 50 • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
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EFA025A
12GHz
18GHz
12GHz
EFA025A
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EFA025A
Abstract: No abstract text available
Text: Excelics EFA025A DATA SHEET Low Distortion GaAs Power FET • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
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EFA025A
12GHz
18GHz
Rn/50
EFA025A
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EFA025A-70
Abstract: EFA025
Text: Excelics EFA025A-70 DATA SHEET Low Distortion GaAs Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz
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EFA025A-70
70mil
12GHz
18GHz
EFA025A-70
EFA025
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EFA025A-70
Abstract: No abstract text available
Text: EFA025A-70 Low Distortion GaAs Power FET UPDATED 04/28/2006 FEATURES • • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 12GHz 7.0 dB Power Gain at 18GHz Typical 1.50 dB Noise Figure and
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EFA025A-70
70mil
12GHz
18GHz
Rn/50
EFA025A-70
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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RTC/5/01/PSINTRO
24-hour
200oC,
275oC
b1415
GAAS FET CROSS REFERENCE
gaas fet 70 mil micro-X Package
power fet 70 mil micro-X Package
EPA240BV
N5 micro-X Package
EPA060B-70
MIXER EMA
0.5w ,GaAs FET
EPA480C-SOT89
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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EPA018A
EPA025A
EPA030C
EPA040A
EPA060A
EFA480B
EFA480C
EFA720A
EFA960B
EFA1200A
EPA018A
EPA060B
EFA018A
Excelics EPA018A
EPA480C
EPA025A
EPA040A
EPA060A
EPA240D
EPA030C
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