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    GAAS FET 15A Search Results

    GAAS FET 15A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC092A-B Analog Devices LTC1551: -4.1V OUTPUT GaAs FET Visit Analog Devices Buy
    DC092A-A Analog Devices LTC1550LCS8 - -4.1V OUTPUT GaA Visit Analog Devices Buy
    ADMV1009AEZ-R7 Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy
    ADMV1009AEZ Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy
    ADMV1010AEZ-R7 Analog Devices 13/15GHz GaAs D/C Visit Analog Devices Buy
    ADMV1010AEZ Analog Devices 13/15GHz GaAs D/C Visit Analog Devices Buy

    GAAS FET 15A Datasheets Context Search

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    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


    Original     		PDF fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n LOW INTERMODULATION DISTORTION n IM3=-45dBc TYP. at Po=36.5dBm Single Carrier n HIGH GAIN G1dB=8.5dB(TYP.) at 5.9GHz to 6.4GHz Level n BROAD BAND INTERNALLY MATCHED


    Original     		PDF -45dBc TIM5964-60SL TIM5964-60SL 27dBm 30dBm 33dBm 36dBm 39dBm 41dBm

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    igbt inverter circuit for induction heating

    Abstract: TLP251F UL1577 E67349 TLP251 VDE0884
    Text: TLP251F TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP251F Inverter For Air Conditionor Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive Unit in mm The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and a integrated photodetector.


    Original     		PDF TLP251F TLP251F TLP251 2500Vrms UL157osing igbt inverter circuit for induction heating UL1577 E67349 VDE0884

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 38V 6472 6 . 4 ~ 7.2GHz BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an internally im pedan ce-m atched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		PDF TIM3742-4L MW50430196 3742-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		PDF TIM3742-4L MW50430196 TIM3742-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		PDF TIM4450-4L MW50500196 4450-4L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-4SL MW51050196 7785-4SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM6472-4SL 2-11D1B) MW50860196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - GldB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5359-4 MW50650196 TIM5359-4 1D172S0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-4SL 0022bfl3 TIM7785-4SL MW51050196 10172SG

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM7785-4 0022b7Ã MW51040196 TIM7785-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5964-4 MW50690196 TDT72SD 00224flb TIM5964-4 Q02EMfl7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-4 MW51040196 TIM7785-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-4 TIM6472-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.5 dB at 5.0 GHz to 5.3 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5053-4 2-11D1B) at260

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5359-4 TIM5359-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G 1dB= 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM4951-4 TIM4951-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS 8820-A S Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - — 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF 820-A JS8820-AS JS8820-AS Cds23 MW10040196

    TI 365

    Abstract: TIM7179-4SL
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, - Single carrier level • High power - P idB = 36.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - iladd = 33% at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-4SL QC172SQ C1DC172SQ TI 365 TIM7179-4SL

    TLP251F

    Abstract: E67349 TLP251 VDE0884
    Text: TOSHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAMs IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA€As light emitting diode and a integrated photodetector.


    OCR Scan     		PDF TLP251F TLP251F TLP251 VDE0884 1140VpK 6000VpA E67349

    7 pin Inverter toshiba

    Abstract: E67349 TLP251 TLP251F VDE0884
    Text: TO SH IBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAM s IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA€As light emitting diode and a integrated photodetector.


    OCR Scan     		PDF TLP251F TLP251F TLP251 VDE0884 1140VpK 6000Vphen 7 pin Inverter toshiba E67349

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAM s IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA-fAs light em itting diode and a integrated photodetector.


    OCR Scan     		PDF TLP251F TLP251F TLP251