Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAAS DIODE NM MW Search Results

    GAAS DIODE NM MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GAAS DIODE NM MW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse


    Original
    0118G PDF

    DIN 7967

    Abstract: TEST2600 TSSS2600
    Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with


    Original
    TSSS2600 TSSS2600 TEST2600 2002/95/EC 11-Mar-11 DIN 7967 TEST2600 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded


    Original
    TSAL5100 2002/95/EC 2002/96/EC TSAL5100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded


    Original
    TSAL5100 2002/95/EC 2002/96/EC TSAL5100 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded


    Original
    TSAL5100 TSAL5100 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 PDF

    F 0094U

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse


    Original
    0094U F 0094U PDF

    Untitled

    Abstract: No abstract text available
    Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.


    Original
    TSUS4400 TSUS4400 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in


    Original
    TSAL5300 2002/95/EC 2002/96/EC TSAL5300 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in


    Original
    TSAL5300 TSAL5300 2002/95/EC 11-Mar-11 PDF

    F 1235A

    Abstract: 1235a F1235A
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235A Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 10 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 200 x 200 µm2


    Original
    PDF

    OPTOKOPPLER

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2


    Original
    0235D OPTOKOPPLER PDF

    0118J

    Abstract: osram topled
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2


    Original
    0118J 0118J osram topled PDF

    Untitled

    Abstract: No abstract text available
    Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.


    Original
    TSSS2600 TSSS2600 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL7600 TSAL7600 18-Jul-08 PDF

    TSAL6100

    Abstract: fire detector Diode Optical Smoke DEtector S8867 TSAL6100X01
    Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire


    Original
    TSAL6100X01 TSAL6100X01 S8867, D-74025 18-Jul-05 TSAL6100 fire detector Diode Optical Smoke DEtector S8867 PDF

    TSKS5400S

    Abstract: No abstract text available
    Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.


    Original
    TSKS5400S TSKS5400S TEKT5400S TEKS5400 TEKS5400 2002/95/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL7400 TSAL7400 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL7300 TSAL7300 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire


    Original
    TSAL6100X01 TSAL6100X01 S8867, 18-Jul-08 PDF

    tsks5400s-asz

    Abstract: No abstract text available
    Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.


    Original
    TSKS5400S TSKS5400S TEKT5400S TEKS5400 TEKS5400 2002/95/EC 08-Apr-05 tsks5400s-asz PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire


    Original
    TSAL6100X01 TSAL6100X01 S8867, 08-Apr-05 PDF

    diode 950

    Abstract: TEKS5400 TEKT5400S TSKS5400-FSZ
    Text: TSKS5400-FSZ Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400-FSZ is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile case.


    Original
    TSKS5400-FSZ TSKS5400-FSZ TEKT5400S TEKS5400 TEKT5400S 08-Apr-05 diode 950 PDF

    TSAL6100

    Abstract: TSAL6100 application
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application PDF

    Untitled

    Abstract: No abstract text available
    Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    TSAL6400 TSAL6400 08-Apr-05 PDF