Untitled
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse
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0118G
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DIN 7967
Abstract: TEST2600 TSSS2600
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with
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TSSS2600
TSSS2600
TEST2600
2002/95/EC
11-Mar-11
DIN 7967
TEST2600
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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TSAL5100
2002/95/EC
2002/96/EC
TSAL5100
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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TSAL5100
2002/95/EC
2002/96/EC
TSAL5100
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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TSAL5100
TSAL5100
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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F 0094U
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse
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0094U
F 0094U
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in
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TSAL5300
2002/95/EC
2002/96/EC
TSAL5300
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in
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TSAL5300
TSAL5300
2002/95/EC
11-Mar-11
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F 1235A
Abstract: 1235a F1235A
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235A Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 10 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 200 x 200 µm2
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OPTOKOPPLER
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2
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0235D
OPTOKOPPLER
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0118J
Abstract: osram topled
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2
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0118J
0118J
osram topled
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Untitled
Abstract: No abstract text available
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.
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TSSS2600
TSSS2600
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL7600
TSAL7600
18-Jul-08
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TSAL6100
Abstract: fire detector Diode Optical Smoke DEtector S8867 TSAL6100X01
Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire
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TSAL6100X01
TSAL6100X01
S8867,
D-74025
18-Jul-05
TSAL6100
fire detector
Diode Optical Smoke DEtector
S8867
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TSKS5400S
Abstract: No abstract text available
Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.
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TSKS5400S
TSKS5400S
TEKT5400S
TEKS5400
TEKS5400
2002/95/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL7400
TSAL7400
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL7300
TSAL7300
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire
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TSAL6100X01
TSAL6100X01
S8867,
18-Jul-08
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PDF
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tsks5400s-asz
Abstract: No abstract text available
Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.
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TSKS5400S
TSKS5400S
TEKT5400S
TEKS5400
TEKS5400
2002/95/EC
08-Apr-05
tsks5400s-asz
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire
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TSAL6100X01
TSAL6100X01
S8867,
08-Apr-05
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diode 950
Abstract: TEKS5400 TEKT5400S TSKS5400-FSZ
Text: TSKS5400-FSZ Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400-FSZ is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile case.
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TSKS5400-FSZ
TSKS5400-FSZ
TEKT5400S
TEKS5400
TEKT5400S
08-Apr-05
diode 950
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TSAL6100
Abstract: TSAL6100 application
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL6100
TSAL6100
08-Apr-05
TSAL6100 application
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL6400
TSAL6400
08-Apr-05
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PDF
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