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    GAAS ARRAY, 850NM Search Results

    GAAS ARRAY, 850NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    GAAS ARRAY, 850NM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


    Original     		LX3044/45/46 LX304X LX3044 LX3045, LX3046, 50ohm LX3045 LX3046 PDF

    VCSEL array, 850nm flip

    Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


    Original     		LX3044/45/46 LX304X LX3044 LX3045, LX3046, 50ohm LX3045 LX3046 VCSEL array, 850nm flip VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3045 LX3046 PIN PHOTO DIODE PDF

    amplifier CV 203

    Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


    Original     		LX3044/45/46 850nm LX304X LX3044 LX3045 LX3046 amplifier CV 203 VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode PDF

    VCSEL array, 850nm flip

    Abstract: No abstract text available
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


    Original     		LX3044/45/46 850nm LX304X LX3044 LX3045 LX3046 VCSEL array, 850nm flip PDF

    GaAs array, 850nm

    Abstract: PIN photodiode 850nm TPA-8D04-005
    Text: TPA-8D04-005 GaAs PIN photodiode array FEATURES: • 1x4 array bar with 250 um pitch • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.5 0.55 0.2


    Original     		TPA-8D04-005 850nm 850nm 1E-10 1E-11 1E-12 1E-13 1E-14 GaAs array, 850nm PIN photodiode 850nm TPA-8D04-005 PDF

    amplifier CV 203

    Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
    Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes


    Original     		LX3044/45/46 850nm LX304X LX3045 LX3046 145um 450um amplifier CV 203 VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip PDF

    CV 203 5 pin

    Abstract: GaAs array, 850nm PIN photodiode 850nm TPA-8D04-003 PIN photodiode chip 850nm TPA photodiode
    Text: TPA-8D04-003 GaAs PIN photodiode array FEATURES: •1x4 array bar with 250 um pitch. • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF 0.50


    Original     		TPA-8D04-003 850nm 1E-10 1E-11 1E-12 1E-13 CV 203 5 pin GaAs array, 850nm PIN photodiode 850nm TPA-8D04-003 PIN photodiode chip 850nm TPA photodiode PDF

    VCSEL array common anode

    Abstract: HFD8104-101 HFD8112-101 VCSEL die bonding
    Text: Fiber Optic Products PIN Array FEATURES • High Bandwidth • Large Active Area • Low capacitance • 4 and 12 channel arrays HFD81xx-101 Preliminary The HFD81xx-101 is a high performance GaAs PIN detector array die ideal for use in manufacturing transceivers for parallel optical


    Original     		HFD81xx-101 HFD81xx-101 700-870nm HFE80xx-101 VCSEL array common anode HFD8104-101 HFD8112-101 VCSEL die bonding PDF

    VCSEL array, 850nm

    Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
    Text: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die


    Original     		LX3044 LX3045, LX3046, 50ohm 125mm LX304X VCSEL array, 850nm GaAs array, 850nm LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip PDF

    GaAs array, 850nm

    Abstract: diode array die
    Text: AXT PRODUCT INFORMATION Standard 1~4 Gbps GaAs PIN Photodiodes Array Part number: PX-CKmn mxn array available m,n=1,2,3.9,A,B,C,D,… Features: • • • • • • 1-4 Gbps operation at –3 to 0 V Two top side wire-bond pads extremely low dark current, capacitance, and excellent responsivity


    Original     		35ize mx460 nx250) GaAs array, 850nm diode array die PDF

    amplifier CV 203

    Abstract: VCSEL array, 850nm flip VCSEL array, 850nm, flip chip VCSEL array, 850nm LX3045 LX3044 LX3046 LX304X 75um
    Text: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current


    Original     		LX3044 LX3045, LX3046, 50ohm 125mm LX304X amplifier CV 203 VCSEL array, 850nm flip VCSEL array, 850nm, flip chip VCSEL array, 850nm LX3045 LX3046 75um PDF

    GaAs array, 850nm

    Abstract: No abstract text available
    Text: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current


    Original     		LX3044 LX3045, LX3046, 50ohm 125mm 850nm LX304X GaAs array, 850nm PDF

    VCSEL array, 850nm flip

    Abstract: LX3046 amplifier CV 203
    Text: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current


    Original     		LX3044 LX3045, LX3046, 50ohm 125mm 850nm LX304X VCSEL array, 850nm flip LX3046 amplifier CV 203 PDF

    2um ir photodiode

    Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
    Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks


    Original     		MXP7A01 10Gbps) 10Gigabit MXP7000 850nm 2um ir photodiode construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier PDF

    construction of photo diode

    Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
    Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks


    Original     		MXP7A02 10Gigabit MXP7000 850nm construction of photo diode photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM PDF

    TPA photodiode

    Abstract: PIN photodiode chip 850nm PIN photodiode 850nm
    Text: TPA-8D04-002 GaAs PIN photodiode chip FEATURES: •1xN array bar with 250 um pitch N≥2 • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF


    Original     		TPA-8D04-002 850nm 1E-10 1E-11 1E-12 TPA photodiode PIN photodiode chip 850nm PIN photodiode 850nm PDF

    VCSEL die bonding

    Abstract: No abstract text available
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN PIN Arrays HFD8104-101, HFD8112-101 Key Features: • • • • High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-101 is a high performance GaAs PIN detector array die ideal for use in manufacturing transceivers for parallel optical


    Original     		850nm HFD8104-101, HFD8112-101 HFD81xx-101 700-870nm 1-866-MY-VCSEL 1-866-MY-VCSEL VCSEL die bonding PDF

    S/LED 850nm

    Abstract: No abstract text available
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


    Original     		10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL S/LED 850nm PDF

    850NM

    Abstract: HFD8104-103 HFD8112-103 10GBPS 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


    Original     		10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL HFD8104-103 HFD8112-103 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL PDF

    850NM

    Abstract: HFD8104-102 HFD8112-102 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding
    Text: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical


    Original     		850NM HFD81XX-102 HFD8104-102 HFD8112-102 700-870nm HFE80xx-102 1-866-MY-VCSEL 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding PDF

    Untitled

    Abstract: No abstract text available
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 10Gbps 850nm PIN PIN Arrays PRELIMINARY HFD8104-103, HFD8112-103 Key Features: • • • • High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays


    Original     		10Gbps 850nm HFD8104-103, HFD8112-103 HFD81xx-103 700-870nm 1-866-MY-VCSEL 1-866-MY-VCSEL PDF

    Photodetector Array

    Abstract: 860nm 20GHz Bandwidth PIN Photodetector 650NM photodetector
    Text: FCI-GaAs-XXM High Speed GaAs Arrays APPLICATIONS  Fiber Optic Receiver Monitor  SM or MM Fiber Ribbon  Parallel Interconnects  DWDM FEATURES  High Speed FEATURES  High Responsivity  High Speed  Low Noise  High  Spectral Responsivity Range 900nm to 1700nm


    Original     		900nm 1700nm 650nm 860nm FCI-GaAs-12M 850nm Photodetector Array 860nm 20GHz Bandwidth PIN Photodetector 650NM photodetector PDF

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR850-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number


    Original     		AR850-20 850nm 320x420um 508um 127um AR880-20 100mA PDF