igbt to 60 kHz
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA75TS120UPbF
18-Jul-08
igbt to 60 kHz
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES 3 • Generation 4 IGBT technology 6 7 1 4 5 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA75TS120UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS
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GA75TS120UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA75TS120UPbF
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7 • Very low conduction and switching losses
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GA75TS120UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet I27239 12/06 GA75TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27239
GA75TS120UPbF
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS
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Original
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GA75TS120UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
11-Mar-11
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GA75TS120UPbF
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
18-Jul-08
GA75TS120UPbF
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RG2 DIODE
Abstract: t4vd
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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PDF
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GA75TS120UPbF
E78996
2002/95/EC
11-Mar-11
RG2 DIODE
t4vd
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