HW-64
Abstract: No abstract text available
Text: R S ERIES - INDUSTRIAL CABINETS OVERVIEW: Optima’s standard cabinet offering for industrial applications, the RA and RC are designed to exceed the industry standards for test instrumentation, industrial controls & electronic applications. Utilizing a field proven extrusion
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HW-64
HW-63)
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NE38018 V68
Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
NE38018 V68
transistor NEC D 587
NE38018
NE38018-T1
NE38018-T2
VP15-00-3
37792
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L103B
Abstract: 6Z121 r302b 2SA179 D15105 HGR-30 BC45B Z-59 lz-173 Z436
Text: R9 1 1K A 33 0 33 0 R P2 0 10 5 V _C PU V _C PU ST P C LK # S LP # IN T R N MI A N3 1 A DS # R4 4 T DO T DI T MS T CK P ICD 1 P ICD 0 33 0 ST P C LK # S LP # IN T R N MI R P1 4 10 5 10P 8R -1 K R 1 2 3 4 6 7 8 9 A G3 5 A H3 0 M3 6 L3 7 AL3 3 A N3 7 A N3 5
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71-51C00-D02
L103B
6Z121
r302b
2SA179
D15105
HGR-30
BC45B
Z-59
lz-173
Z436
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Untitled
Abstract: No abstract text available
Text: Optima EPS ▲ Optima Electronic Desk Systems Desk System Utilizes Standard 21” Height Optima Vertical Cabinet System includes up to two Optima Cabinets All Optima desks use the same contemporary cabinet designs RA and RC Series that highlight the Optima
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mdd 42
Abstract: Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206
Text: AK 8 A H1 2 AH 8 AN 9 AL1 5 A H1 0 AL 9 AH 6 A K1 0 AN 5 AL 7 A K1 4 AL 5 AN 7 AE 1 Z6 AG3 AC 3 AJ 1 AE 3 AB 6 AB 4 AF 6 Y3 AA 1 AK 6 Z4 AA 3 AD 4 H RE Q# 0 H RE Q# 1 H RE Q# 2 H RE Q# 3 H RE Q# 4 A K1 8 A H1 6 A H1 8 AL1 9 AL1 7 A DS # A N3 1 H R EQ#[0.4]
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71-51C00-D02
mdd 42
Am22A
2SA179
78L05
TT 2206
54F01
CQ242
71-51C00-D02
LZ-173
KZ206
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6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
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NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
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Untitled
Abstract: No abstract text available
Text: l a on i ss ion e of lut r P So Enclosures & Components Cooling elements as front or rear panel in the 19-inch technology Heat Sink Front Panels System Platforms Backplanes Enclosures & Components Cabinets Rotary Switches Da t a sheet Heat Sink Front Panels
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19-inch
81-062-xx
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C5802
Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution
Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for
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E3842S
E3843S
EO24C0045510
EO26C0045510
EO28C0045510
EO28P0181510
EO28P0501510
EO30C0045510
SP00C0011010
SP00C0012010
C5802
c1226a
modern china tv 8893 circuit diagram
c5888
Reducing sleeve, AWG 16-20
8741 substitution
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transistor c3150
Abstract: c3271 KEMA KEUR thermostat C4108
Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for
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E3842S
E3843S
EO24C0045510
EO26C0045510
EO28C0045510
EO28P0181510
EO28P0501510
EO30C0045510
SP00C0011010
SP00C0012010
transistor c3150
c3271
KEMA KEUR thermostat
C4108
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MIG50Q7CSB1X
Abstract: IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A
Text: New Product Guide Compact IGBT Modules & Compact IPM NEW PRODUCT GUIDE Compact IGBT Modules Features • The new package technology achieved small and compact size. • The new generation IGBT and FRD chips achieved low loss and low emission noise. • Fault-signal output circuit short circuit and overtemperature is included.
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E87989
MIG50Q7CSB1X
IPM toshiba
MG300Q2YS
MG150J7KS60
MIG200Q2CSB1X
MG200J6ES60
MG200Q2YS60A
MG300Q2YS60A
japan servo co KP56LM2-503
MG400Q2YS60A
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unitronics
Abstract: ACTIVE ELECTRONICS gentech 301 66211 Crystal Semiconductors Conley and Associates Nanjing Micro One Electronics 77535
Text: Worldwide Representatives and Distributors Section 13: WORLDWIDE SALES REPRESENTATIVES AND DISTRIBUTORS Micrel Offices . 1 U.S. Sales Representatives . 2
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1-06A
unitronics
ACTIVE ELECTRONICS
gentech 301
66211
Crystal Semiconductors
Conley and Associates
Nanjing Micro One Electronics
77535
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DP 704
Abstract: 898N 9576 GM 455T 879N 879F 855p transistor 9751 UPC 923 642T
Text: PICO Pico # • Glass Fuses and Fuse Holders 905 • Constructed of tough black thermoset UL94V0 . Includes 3 springs for various fuse sizes and spring-locked, bayonet type knob. Supplied with 15” loop of 14 gauge red wire. Use with Glass SFE 7-1/2, 9, 14, 20, AGA, AGC,
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UL94V0)
DP 704
898N
9576 GM
455T
879N
879F
855p
transistor 9751
UPC 923
642T
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toshiba smd marking
Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency
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5252 F mosfet
Abstract: No abstract text available
Text: New Product Guide Photorelay TLP227GA Series The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety margins to
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TLP227GA
TLP227G
TLP227G/TLP597GA/TLP227GA-2
5252 F mosfet
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bb 36 931
Abstract: BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931
Text: moulded bridges o ponts moulés THOMSON-CSF Vr = Types 15A 141 8 A ,1 BY BA BB BD BF BH 26 26 26 26 26 26 933 933 933 933 933 933 BY 38 BA 38 BB 38 BD 38 BF 38 BH 38 10A‘1» BY BA BB BD BF BH 36 36 36 36 36 36 933 933 933 933 933 933 15A 1> 931 931 931
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200/15A
400/25A
35A131
bb 36 931
BB36931
ba741
BH 37 933
ba 37 931
BH37931
BB36-931
BD37933
BH 36 933
BB39931
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facon bf 39933
Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Text: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom mended max id on re sistive load
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3M5b203
FBD08
FBH08
CB-198
CB-237
facon bf 39933
facon BA 204 115
Facon Bb 37 933
facon bh 39933
BD 39-931
Facon BH 37 933
bd 39933
FBH15
facon bd 39933
Facon bh 36931
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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62703-F
Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure
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0G1734Ô
CFY30
62703-F
OT-143
fl23b32Q
GG173S7
T--31--25
CFY30
GaAs FET cfy 19
siemens gaas fet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
Rn/50
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ct 5066
Abstract: 617 610 372 A ST 9727 semelec denso toyota
Text: [sO OPTOELECTHOWICS AUTHORIZED REPRESENTATIVES AND DISTRIBUTORS North American Technical Representatives ALABAMA Com Rep Madison Tel: 256-772-9982 Fax: 256-772-8693 CANADA Cont. Canadian Source Corp Kanata, Ontario Tel: 613-599-5882 Fax: 613-599-5886 INDIANA (Cont.)
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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Hitachi 64180 manual
Abstract: G4PS245 VGA 15 PIN wiring DIAGRAM Hitachi 64180 MODEL 100 schematic FM TRANSMITTER TWO WATTS 80SM epson printer rs 485 multidrop full duplex 8-Bit Microprocessor CPU
Text: G4LC4 Model 100 Processor User’s Guide G4LC4 mistic MODEL 100 PROCESSOR USER’S GUIDE This technical document describes the features, specifications, and operations of the product. For specific wiring connections, dimensions, and operational specifications of I/O modules,
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-800-321-OPTO
Hitachi 64180 manual
G4PS245
VGA 15 PIN wiring DIAGRAM
Hitachi 64180
MODEL 100
schematic FM TRANSMITTER TWO WATTS
80SM
epson printer
rs 485 multidrop full duplex
8-Bit Microprocessor CPU
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Untitled
Abstract: No abstract text available
Text: SALES REPRESENTATIVES AND DISTRIBUTORS n11111 1111 1111 11111 m 1111111111111111111 ii i CORPORATE HEADQ UARTERS Pericom Semiconductor Corporation 2 3 8 0 Be r i n g Dr i ve S a n J o se , C A 95131
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n11111
Fa34141
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