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    G6N50E1D

    Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
    Text: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance


    Original     		PDF HGTP6N40E1D, HGTP6N50E1D O-220AB 150oC. 150oC 100oC -50oC G6N50E1D hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E

    G6N50E1D

    Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
    Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS


    OCR Scan     		PDF HGTP6N40E1D, HGTP6N50E1D O-220AB 50iiH G6N50E1D G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor