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    G4435SS Price and Stock

    Diodes Incorporated DMG4435SSS-13

    MOSFET P-CH 30V 7.3A 8SOP
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    DMG4435SSS-13 Digi-Reel 1
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    RS DMG4435SSS-13 Bulk 20
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    Win Source Electronics DMG4435SSS-13 114,900
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    Diodes Incorporated DMG4435SSS13

    Electronic Component
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    ComSIT USA DMG4435SSS13 2,090
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    G4435SS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G4435SS

    Abstract: DMG4435SSS G4435 g443
    Text: G4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		DMG4435SSS AEC-Q101 J-STD-020 DS32041 G4435SS DMG4435SSS G4435 g443 PDF

    G4435SS

    Abstract: g443
    Text: G4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -30V 16mΩ @ VGS = -20V 20mΩ @ VGS = -10V Features • • • • • • • ID TA = +25°C -7.3A -6.0A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG4435SSS AEC-Q101 DS32041 G4435SS g443 PDF

    G4435SS

    Abstract: No abstract text available
    Text: G4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -30V 16m @ VGS = -20V 20m @ VGS = -10V Features ID TA = +25°C -7.3A -6.0A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMG4435SSS AEC-Q101 DS32041 G4435SS PDF

    G4435SS

    Abstract: No abstract text available
    Text: G4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		DMG4435SSS AEC-Q101 J-STD-020 DS32041 G4435SS PDF

    G4435SS

    Abstract: g443
    Text: G4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -30V 16mΩ @ VGS = -20V 20mΩ @ VGS = -10V Features • • • • • • • ID TA = +25°C -7.3A -6.0A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG4435SSS AEC-Q101 DS32041 G4435SS g443 PDF