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    Abstract: No abstract text available
    Text: SSP4N90AS A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 (iA (Max.) @ VDS = 900V


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    PDF SSP4N90AS G404Q0 O-220 00M1N 7Tb4142 DD3b33D