Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G30N60FL Search Results

    SF Impression Pixel

    G30N60FL Price and Stock

    Rochester Electronics LLC NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG30N60FLWG Tube 8,430 143
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.11
    • 10000 $2.11
    		Buy Now

    onsemi NGTG30N60FLWG

    IGBT 600V 60A 250W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG30N60FLWG Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas NGTG30N60FLWG Tube 4 Weeks 172
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9856
    • 10000 $1.8688
    		Buy Now
    Rochester Electronics NGTG30N60FLWG 230 1
    • 1 $2.13
    • 10 $2.13
    • 100 $2
    • 1000 $1.81
    • 10000 $1.81
    		Buy Now
    Flip Electronics NGTG30N60FLWG 150
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    G30N60FL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NGTG30N60FLWG

    Abstract: G30N60FL G30N60F
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL G30N60F

    G30N60FL

    Abstract: No abstract text available
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL

    G30N60FL

    Abstract: No abstract text available
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG30N60FLWG NGTG30N60FLW/D G30N60FL