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    G3 SOT 23 Search Results

    G3 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    G3 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking G3

    Abstract: KDS196 G3 Package g3-1 sot 23 MARKING G3 SOT-23
    Text: SEMICONDUCTOR KDS196 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 G3 1 2 Item Marking Description Device Mark G3 KDS196 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS196 OT-23 marking G3 KDS196 G3 Package g3-1 sot 23 MARKING G3 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		PDF OT-23 1SS196 OT-23

    ISS19

    Abstract: ISS196 marking G3 1SS196
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching DIODES FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C. MARKING: G3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		PDF OT-23 1SS196 OT-23 100mA ISS19 ISS196 marking G3 1SS196

    Untitled

    Abstract: No abstract text available
    Text: MMBD914-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade


    Original     		PDF MMBD914-G OT-23, AEC-Q101 OT-23 18/10K 10K/box 08/3K 15K/box MMBD914-G3-08

    Untitled

    Abstract: No abstract text available
    Text: MMBD6050-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade


    Original     		PDF MMBD6050-G OT-23, AEC-Q101 OT-23 18/10K 10K/box 08/3K 15K/box MMBD6050-G3-08

    Untitled

    Abstract: No abstract text available
    Text: IMBD4448-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade


    Original     		PDF IMBD4448-G OT-23, AEC-Q101 OT-23 18/10K 10K/box 08/3K 15K/box IMBD4448-G3-08

    Untitled

    Abstract: No abstract text available
    Text: IMBD4148-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade


    Original     		PDF IMBD4148-G OT-23, AEC-Q101 OT-23 18/10K 10K/box 08/3K 15K/box IMBD4148-G3-08

    marking G3

    Abstract: No abstract text available
    Text: 1SS196 Switching Diodes SOT-23 1. N.C. 2. ANODE 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits


    Original     		PDF 1SS196 OT-23 100mA marking G3

    AU7G

    Abstract: DB3 5T B776 75AG A6J 8A x37c 73a3
    Text: @>D+.<-'364 3UUR;=@A; " 9@ /;% ;+8<3<=9; " ;9.>-=$ >7 7 +;B 6KGYZWKX . - R 7H C7GA> FE; A@ 3 CJ : ;9: GA> E3 97 E75: @ A> A9J , ;I"]\#%[Oe R $@ EC; @ D;5 83 DE C75AG7C J 4 A6J 6; A67 ;  L   " -/ 7 R IEC 7? 7> J> AH C7G7CD7 C75AG7CJ 5: 3 C97 R/ > EC3 >


    Original     		PDF 009-134-A O-247 PG-TO247-3 O-247, AU7G DB3 5T B776 75AG A6J 8A x37c 73a3

    Untitled

    Abstract: No abstract text available
    Text: @>D+.<-'364 3UUR;=@A;฀"9@/;฀%;+8<3<=9; ";9.>-=฀$>77+;B 6KGYZWKX . -฀ R฀ 7H฀C7GA>FE;A@3CJ฀:;9:฀GA>E397฀E75:@A>A9J ฀ , ;I"]\#%[Oe R฀$@EC;@D;5฀83DE C75AG7CJ฀4A6J฀6;A67 L ฀   ; -/ 7 R฀ IEC7?7>J฀>AH฀C7G7CD7฀C75AG7CJ฀5:3C97


    Original     		PDF C75AG7CJà C3E76 53B34; 355AC6; 26892F 009-134-A O-247

    Untitled

    Abstract: No abstract text available
    Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C


    Original     		PDF MMBT589LT1 MMBT589LT1/D

    MMBT589LT1

    Abstract: MMBT589LT1G MMBT589LT3 MMBT589LT3G g3 ON sot-23
    Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available 3 MAXIMUM RATINGS TA = 25°C Rating Symbol


    Original     		PDF MMBT589LT1 OT-23 O-236) MMBT589LT1/D MMBT589LT1 MMBT589LT1G MMBT589LT3 MMBT589LT3G g3 ON sot-23

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


    Original     		PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130

    marking E1 sot23-5

    Abstract: G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33
    Text: MC78PC00 Series Low Noise 150 mA Low Drop Out LDO Linear Voltage Regulator The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of


    Original     		PDF MC78PC00 OT-23 OT-23-5 marking E1 sot23-5 G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33

    NSVMMBT589

    Abstract: MARKING G3 Transistor
    Text: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring


    Original     		PDF MMBT589LT1G, NSVMMBT589LT1G AEC-Q101 OT-23 O-236) MMBT589LT1/D NSVMMBT589 MARKING G3 Transistor

    MMBT589LT1

    Abstract: MMBT589LT1G G3 SOT23-3
    Text: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C


    Original     		PDF MMBT589LT1 MMBT589LT1/D MMBT589LT1 MMBT589LT1G G3 SOT23-3

    B0679

    Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52


    Original     		PDF BST52 BSP52 MPSA28 2S01698 2S01697 2S01699 BC879 B0679 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector −Emitter Voltage VCEO −30


    Original     		PDF MMBT589LT1 OT-23 236AB)

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB)


    Original     		PDF BAS21LT1 236AB) 30mAdc,

    marking G3

    Abstract: BAS21LT1 G32 diode G32 SOT23-6
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8


    Original     		PDF BAS21LT1 236AB) 30mAdc, marking G3 BAS21LT1 G32 diode G32 SOT23-6

    MMBT589LT1G

    Abstract: No abstract text available
    Text: MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF MMBT589LT1G MMBT589LT1/D MMBT589LT1G

    ST1536

    Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
    Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005


    Original     		PDF FMEMCU-UG-910010-24 SK-91460-MAIN ST371 UG-910010-24 32bit) ST1536 st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556

    MMBT589LT1

    Abstract: 1E-05
    Text: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector–Emitter Voltage VCEO –30


    Original     		PDF MMBT589LT1 236AB) r14525 MMBT589LT1/D MMBT589LT1 1E-05

    bfq34 application note

    Abstract: ON4497 BFQ34 sf 122 transistor
    Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a


    OCR Scan     		PDF DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor