MGB19N35CL
Abstract: MGB19N35CLT4 MGP19N35CL
Text: MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP19N35CL,
MGB19N35CL
r14525
MGP19N35CL/D
MGB19N35CL
MGB19N35CLT4
MGP19N35CL
|
PDF
|
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
|
Original
|
DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
|
PDF
|
ignition IGBT
Abstract: No abstract text available
Text: MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP19N35CL,
MGB19N35CL
r14525
MGP19N35CL/D
ignition IGBT
|
PDF
|
G19N35CL
Abstract: MGB19N35CL MGB19N35CLT4 MGP19N35CL
Text: MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP19N35CL,
MGB19N35CL
O-220
r14525
MGP19N35CL/D
G19N35CL
MGB19N35CL
MGB19N35CLT4
MGP19N35CL
|
PDF
|