G20N50c
Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR
|
Original
|
HGTP15N40C1,
HGTH20N40C1,
O-218AC
O-220AB
HGTH20N40E1,
HGTH20N50C1,
HGTH20N50E1,
HGTP15N40E1,
G20N50c
G20N50C1
g20n50
G15N50
intersil 2700
g15n50c1
G20N50E1
HGTH20N50C1
HGTH20N50E1
HGTP15N40E1
|
PDF
|
5N40CL
Abstract: G15N40CLG MGB15N40CL MGP15N40CL G15N40
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
O-220
MGP15N40CL/D
5N40CL
G15N40CLG
MGB15N40CL
MGP15N40CL
G15N40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
O-220
1255C)
|
PDF
|
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
|
Original
|
DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
|
PDF
|
G15N40CL
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40CL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
MGP15N40CL/D
|
PDF
|
G15N40CL
Abstract: G15N40C G15N40 IGBT 50 amp 1000 volt igbt ignition MGB15N40CL MGB15N40CLT4 MGP15N40CL ignition IGBT
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40CL
G15N40C
G15N40
IGBT 50 amp 1000 volt
igbt ignition
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
ignition IGBT
|
PDF
|
MGB15N40CL
Abstract: MGB15N40CLT4 MGP15N40CL G15N40
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
G15N40
|
PDF
|
G20N50c
Abstract: G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40
Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs
|
Original
|
HGTP15N40C1,
HGTH20N40C1,
O-218AC
O-220AB
HGTH20N40E1,
HGTH20N50C1,
HGTH20N50E1,
HGTP15N40E1,
G20N50c
G20N50
g15n50c1
G20N50C1
G15N50
G20N50E1
g15n50c
G15N50E1
G15N40C
G20N40
|
PDF
|
G15N40
Abstract: MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
440VDC
|
PDF
|