Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G15N40C Search Results

    G15N40C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N50c

    Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
    Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR


    Original     		PDF HGTP15N40C1, HGTH20N40C1, O-218AC O-220AB HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, G20N50c G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1

    5N40CL

    Abstract: G15N40CLG MGB15N40CL MGP15N40CL G15N40
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL O-220 MGP15N40CL/D 5N40CL G15N40CLG MGB15N40CL MGP15N40CL G15N40

    Untitled

    Abstract: No abstract text available
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL O-220 1255C)

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    G15N40CL

    Abstract: No abstract text available
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL r14525 MGP15N40CL/D G15N40CL

    Untitled

    Abstract: No abstract text available
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL MGP15N40CL/D

    G15N40CL

    Abstract: G15N40C G15N40 IGBT 50 amp 1000 volt igbt ignition MGB15N40CL MGB15N40CLT4 MGP15N40CL ignition IGBT
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL r14525 MGP15N40CL/D G15N40CL G15N40C G15N40 IGBT 50 amp 1000 volt igbt ignition MGB15N40CL MGB15N40CLT4 MGP15N40CL ignition IGBT

    MGB15N40CL

    Abstract: MGB15N40CLT4 MGP15N40CL G15N40
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL r14525 MGP15N40CL/D MGB15N40CL MGB15N40CLT4 MGP15N40CL G15N40

    G20N50c

    Abstract: G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40
    Text: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs


    Original     		PDF HGTP15N40C1, HGTH20N40C1, O-218AC O-220AB HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, G20N50c G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40

    G15N40

    Abstract: MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC
    Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF MGP15N40CL, MGB15N40CL r14525 MGP15N40CL/D G15N40 MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC