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    G12N60D1 Search Results

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    G12N60D1 Price and Stock

    Rochester Electronics LLC HGTG12N60D1D

    UFS SERIES N-CHANNEL IGBT
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    DigiKey HGTG12N60D1D Bulk 606 44
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    Renesas Electronics Corporation HGTG12N60D1D

    - Bulk (Alt: HGTG12N60D1D)
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    Avnet Americas HGTG12N60D1D Bulk 4 Weeks 53
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    • 100 $6.8256
    • 1000 $6.5412
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    Harris Semiconductor HGTG12N60D1D

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    Bristol Electronics HGTG12N60D1D 300
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    Rochester Electronics HGTG12N60D1D 606 1
    • 1 $6.92
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    • 100 $6.5
    • 1000 $5.88
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    G12N60D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G12N60D1D

    Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D
    Text: G12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss


    Original     		PDF HGTG12N60D1D O-247 500ns 150oC. G12N60D1D G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D

    g12n60d1

    Abstract: AN7254 AN7260 HGTP12N60D1
    Text: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss


    Original     		PDF HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1

    G12N60D1

    Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
    Text: G12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60

    g12n60d1

    Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
    Text: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device


    Original     		PDF HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1 G12N60D

    G12N60D1

    Abstract: 12n60d1 28-303 A 933 S transistors
    Text: HGTP12N60D1 cE W s 12A, 600V N-Channel IGBT April 1995 Features Package • 12A,600V JEDEC TO-220AB • Latch Free Operation EMfTTER CO LLECTO R • Typical Fall Time <500ns GATE • High Input Impedance CO LLECTO R FLA NG E • L o w C o n d u c tio n Loss


    OCR Scan     		PDF HGTP12N60D1 O-220AB 500ns G12N60D1 12n60d1 28-303 A 933 S transistors