PA572T
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PA572T
NMOSFET52
SC-70MOS
Cycle50%
200TOTAL
G11244JJ3V0DS003
G11244JJ3V0DS
PA572T
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C10535E
Abstract: MEI-1202 PA573T 6 PIN case mos fet p-channel
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA573T P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING The µPA573T is a super-mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting 0.2 +0.1 –0
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PA573T
PA573T
SC-70
C10535E
MEI-1202
6 PIN case mos fet p-channel
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3 PP 03 L 04
Abstract: No abstract text available
Text: ICs for VCR AN3584SH Video output IC with character insertion interface • Overview Unit: mm The AN3584SH is a video output interface driver IC. 6.5±0.3 ■ Features 24 +0.10 5.5±0.3 7.5±0.3 0° to 10° 0.50 0.65±0.10 1.5±0.2 12 ea 21 GND se ht v 20
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AN3584SH
AN3584SH
3 PP 03 L 04
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PA572T
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA573T
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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Original
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PDF
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PA573T
PMOSFET52
SC-70MOS
Cycle50%
G11245JJ3V0DS003
G11245JJ3V0DS
PA573T
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PA572T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOSFET 5-PIN 2 CIRCUITS FOR SWITCHING DESCRIPTION PACKAGE DIMENSIONS (in millimeters) The µPA572T is a super-mini-mold device provided with 0.2 +0.1 –0 two MOS FET circuits. It achieves high-density mounting
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PA572T
PA572T
SC-70
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C10535E
Abstract: MEI-1202 PA505T
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA573T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA573T P-CHANNEL MOSFET 5-PIN 2 CIRCUITS FOR SWITCHING DESCRIPTION PACKAGE DIMENSIONS (in millimeters) The μPA573T is a super-mini-mold device provided with 0.2 +0.1 –0 two MOS FET circuits. It achieves high-density mounting
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PA573T
PA573T
SC-70
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PA572T
Abstract: c04 D1
Text: データ・シート MOS形複合電界効果トランジスタ MOS Field Effect Transistor PA572T NチャネルMOSFET（5ピン2回路内蔵） スイッチング用 外形図（単位：mm） 本製品は，NチャネルMOS FETを2回路内蔵した小形ミ
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PDF
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PA572T
NMOSFET52
SC-70MOS
Cycle50%
200TOTAL
G11244JJ3V0DS003
G11244JJ3V0DS
PA572T
c04 D1
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PA573T
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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PA573T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA573T P-CHANNEL MOSFET 5-PIN 2 CIRCUITS FOR SWITCHING DESCRIPTION PACKAGE DIMENSIONS (in millimeters) The µPA573T is a super-mini-mold device provided with 0.2 +0.1 –0 two MOS FET circuits. It achieves high-density mounting
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PA573T
PA573T
SC-70
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C10535E
Abstract: MEI-1202 PA505T marking FA fet transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the
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PA505T
SC-59
PA505T
C10535E
MEI-1202
marking FA
fet transistor
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marking ia
Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as
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PA602T
PA602T
SC-59
PA603T
marking ia
uPA602T
C10535E
MEI-1202
PA603T
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C10535E
Abstract: MEI-1202 PA572T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING The µPA572T is a super-mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting 0.2 +0.1 –0
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PA572T
PA572T
SC-70
C10535E
MEI-1202
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g717
Abstract: DL-120 2C11-15 24 pin camera G715
Text: ICs for VCR AN3584SH Video output IC with character insertion interface • Overview Unit: mm The AN3584SH is a video output interface driver IC. 6.5±0.3 5.5±0.3 7.5±0.3 • 75 Ω driver • Separated input for component and composite signals for luminance system
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AN3584SH
AN3584SH
SSOP024-P-0300A
g717
DL-120
2C11-15
24 pin camera
G715
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NEC uPA 63 H
Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’
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uPA502T
pPA502T
SC-59
pPA503T
NEC uPA 63 H
NEC uPA 63
NEC uPA 63 a
NEC uPA 71
GL124
MEL12
UPA672T
UPA572T
UPA602
nec sc-59 fet
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g717
Abstract: AN3584 3 PP 03 L 04 DL91 g1124 G11-24 2C111
Text: 1 0 dB EE Line Clamp 0.50 SW5 Line LET3 0.65±0.10 1.5±0.2 12 Seating plane 0.2±0.1 20 kΩ 0.65±0.10 0.1±0.1 0.15 - 0.05 +0.10 5.5±0.3 7.5±0.3 • Overview R-BLK 12 in CC 24 Camera 11 C-in 0.50 Rec. 10 data in Det. CC ■ Features Camera 9 Y-in Clamp
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SSOP024-P-0300A
g717
AN3584
3 PP 03 L 04
DL91
g1124
G11-24
2C111
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FET2
Abstract: SC-70MOS K1992 PA573T PW-10 transistor pt 42
Text: データ・シート MOS形複合電界効果トランジスタ MOS Field Effect Transistor PA573T PチャネルMOSFET（5ピン2回路内蔵） スイッチング用 外形図（単位：mm） 本製品は，PチャネルMOS FETを2回路内蔵した小形ミ
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Original
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PDF
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PA573T
PMOSFET52
SC-70MOS
Cycle50%
G11245JJ3V0DS003
G11245JJ3V0DS
FET2
SC-70MOS
K1992
PA573T
PW-10
transistor pt 42
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PA572T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOSFET 5-PIN 2 CIRCUITS FOR SWITCHING DESCRIPTION PACKAGE DIMENSIONS (in millimeters) The µPA572T is a super-mini-mold device provided with 0.2 +0.1 –0 two MOS FET circuits. It achieves high-density mounting
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PA572T
PA572T
SC-70
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Hp 4619
Abstract: Serial NAND A1225 A1240 A1280 CQFP 256 PIN actel 81H13 actel a1240 A1280-1 2a1280
Text: SBE AC TEL CORP D • OnEHTb DGDDMGS Mb3 ■ ACT ACT 2 Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD /LC A ™ equivalent gates • Replaces up to 210 T T L Packages • Replaces up to 69 20-Pin PA L Packages • Design Library with over 250 Macros
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OCR Scan
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20-Pin
16-Bit
On241b
100-Pin
00D0475
84-Pin
T-46-1il
Hp 4619
Serial NAND
A1225
A1240
A1280
CQFP 256 PIN actel
81H13
actel a1240
A1280-1
2a1280
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LH1605CK
Abstract: LH1605 g1124 h1605
Text: • b 5 D H E M 007bb34 Tbb * N S C P 03 National mm Semiconductor NATL SEHIC0ND LINEAR T -5 8 V /-3 / LH1605/LH1605C 5 Amp, High Efficiency Switching Regulator General Description Features The LH1605 is a hybrid switching regulator with high output current capabilities. It incorporates a temperature-compen
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LH1605/LH1605C
007bb34
LH1605/LH1605C
LH1605
LH1605CK
g1124
h1605
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