Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
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G11135-256DD,
G11135-512DE
G11135
KMIR1018E09
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InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Text: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,
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G11135
SE-171
KMIR1018E06
InGaAs photodiode array chip
charge amplifier array
Image Sensors
G11135-512DE
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Untitled
Abstract: No abstract text available
Text: InGaAsリニアイメージセンサ G11135-256DD, G11135-512DE シングルビデオライン 256/512 画素 近赤外イメージセンサ (0.95 ～ 1.7 m)
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G11135-256DD,
G11135-512DE
G11135ã
KMIR1018J11
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photodiode linear array 256
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
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G11135-256DD,
G11135-512DE
G11135
KMIR1018E10
photodiode linear array 256
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Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
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G11135-256DD,
G11135-512DE
G11135
operatio53
B1201,
KMIR1018E11
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zck m1
Abstract: SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence
Text: SIEM ENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fc K 166 125 125 125 MHz latency 3 2 3 3 - ÍCK3 6 8 7 8 ns ^AC3 5.5 5.5 5.5 6 Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability
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OCR Scan
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39S13620TQ-6/-7/-8
cycles/32
39S16320TQ
023Sb05
zck m1
SIEMENS BST
ABIAP
zck d15
D1113
SIEMENS BST h 05 90
SIEMENS SCR BST
smd marking mop
smd marking T22
Siemens pulse sequence
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Image sensors
Abstract: ccd sensors
Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use
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14-Bit
Image sensors
ccd sensors
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C10500
Abstract: No abstract text available
Text: セレクションガイド 2013.11 イメージセンサ 幅 広 い 波 長 範 囲 に 対 応した 計 測 用 イメ ー ジ セ ン サ IMAGE SENSOR イメージセンサ 幅広い波長範囲に対応した 計測用イメージセンサ 浜 松ホトニクスは赤 外から可 視・紫 外・真 空 紫 外・
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S11830-3344MF
Abstract: No abstract text available
Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS
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L11788
L11789
C11367
DE128228814
S11830-3344MF
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Untitled
Abstract: No abstract text available
Text: Supported OS for the software supplied with image sensor driver circuits, multichannel detector heads, or controllers Circuit, Multichannel Image sensor Interface detector head C11165-01 C11160 C11513 C11513-01 C11513-02 C11513-03 C11287 C11288 S11155/S11156
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C11165-01
C11160
C11513
C11513-01
C11513-02
C11513-03
C11287
C11288
S11155/S11156
S11151-2048
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BR1113F
Abstract: 1113F g1113
Text: 1113F Series Single Color Right Angle Type 2.1 X 1.0 mm Features Package Right Angle Type (2.1 x 1.0 mm) Type, Milky White resin Product features Outer Dimension 2.1 x 1.0 x 0.6mm ( L x W x H ) Temperature range Storage Temperature : -40℃～100℃ Operating Temperature : -30℃～85℃
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1113F
567nm
572nm
647nm
BR1113F
g1113
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Untitled
Abstract: No abstract text available
Text: 春 半日がかりの測定をわずか2 3分に短縮。 しかも信頼性の高い測定を実現 カンタウルス 絶対PL量子収率測定装置 UVランプ式ライン照射の常識を覆す！新時代の光源登場！ リニア照射型UV-LEDユニット
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rt68
Abstract: MOS 4011 k15a MA140 PC11005 10SL33M 16SL15M 330M K167 fetron
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PD16901GS
FETPD16901GS
PD16901PCMCIA12
PD16901GSPNMPulse
ICCOFF100AOFF
14SOP300
S12268JJ1V0AN00
108-0171NEC
rt68
MOS 4011
k15a
MA140
PC11005
10SL33M
16SL15M
330M
K167
fetron
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability
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OCR Scan
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39S13620TQ-6/-7/-8
cycles/32
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Untitled
Abstract: No abstract text available
Text: 1113F Series Single Color Right Angle Type 2.1 X 1.0 mm Features Package Right Angle Type (2.1 x 1.0 mm) Type, Milky White resin Product features Outer Dimension 2.1 x 1.0 x 0.6mm ( L x W x H ) Temperature range Storage Temperature : -40℃～100℃ Operating Temperature : -30℃～85℃
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1113F
567nm
572nm
647nm
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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Sensors PSD
Abstract: No abstract text available
Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches
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16-element
C9004)
KACCC0426EB
Sensors PSD
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Untitled
Abstract: No abstract text available
Text: モジュール 1 ミニ分光器 1-1 1-2 1-3 1-4 1-5 1-6 1-7 当社の技術 構造 特性 動作モード 評価用ソフトウェア 新たな取り組み 応用例 2 MPPCモジュール 2-1 2-2 2-3 2-4 2-5 特長 使い方 特性 新たな取り組み
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KACCC0426JB
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Untitled
Abstract: No abstract text available
Text: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用
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Abstract: No abstract text available
Text: 1113F Series Single Color Right Angle Type 2.1 X 1.0 mm Features Package Right Angle Type (2.1 x 1.0 mm) Type, Milky White resin Product features Outer Dimension 2.1 x 1.0 x 0.6mm ( L x W x H ) Temperature range Storage Temperature : -40℃~100℃ Operating Temperature : -30℃∼85℃
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1113F
567nm
572nm
647nm
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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Untitled
Abstract: No abstract text available
Text: イメージセンサ 1 CCDイメージセンサ 1-1 1-2 1-3 1-4 構造動作原理 特性 使い方 新たな取り組み 2 NMOSリニアイメージセンサ 6-1 6-2 6-3 6-4 6-5 特長 構造 動作原理 特性 使い方 7 InGaAsリニアイメージセンサ
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IS1-17,
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Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
Selection guide
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